Indium Zinc Oxide (IZO) Target

Product Description

the izo film is the possible candicate for replacing the indium tin oxide (ito) film in pattern precision or low processing temperature concerns. at present, we commonly produce in2o3: zno = 90: 10 wt%, other composition can also be custom produced.

casting (vacuum or atmospheric), rolling, forging (hot / cold), pressing (cold, hot, uniaxial or isotropic), sintering, spraying (plasma, wire). cam runs all these process technologies, including cutting, milling, sawing, grinding, etc.

1. oxide sputtering target:
ceo2, nd2o3, sm2o3, eu2o3, gd2o3, tb4o7, dy2o3, ho2o3, er2o3, tm2o3, yb2o3, lu2o3, sc2o3, y2o3, ta2o5, nb2o5, ga2o3, v2o5, zro2 doped with ti, wo3, wo2.9, hfo2, mgo, al2o3, indium tin oxide, ito (in2o3-sno2), zno, al2o3 doped zno (azo), izo (indium zinc oxide, 90 wt% in2o3 / 10 wt% zno), ga2o3 doped zno (gzo), igzo, la0.67sr0.33mno3 (lsmo), zro2-y2o3 stabilized (ysz), sno2, sb2o3 doped sno2 (ato), zro2+ti, zro2+zr, zro2+sio2, bi2o3, cr2o3, moo, moo3, nio, etc.

2. (boride, carbide, nitride, fluoride, silicide, sulfide) sputtering target
lab6, zrb2, crb2, tib2, hfb2, mo2b5, tab2, nbb2, w2b, wb, vb2
tic, sic, wc, wc-co, wc-ni, b4c, tac, zrc, cr3c2, hfc, mo2c, vc
si3n4, aln, bn, bn/sic mixture, hfn, tan, nbn, zrn, tin, vn
laf3, cef3, ndf3, yf3, naf, kf, baf2, alf3, lif, caf2, srf3, srf2, mgf2
cosi2, mo5si3, mosi2, ta5si3, tasi2, nb5si3, nbsi2, crsi2, cr3si, hfsi2, etc.

3. metal sputtering target:
silver, ag, iridium, ir, ruthenium, ru, la, ce, pr, nd, sm, eu, gd, tb, dy, ho, er, tm, yb, lu, sc, y, silicon, si, tellurium, te, bismuth, bi, tin, sn, zinc, zn, boron, b, lead, pb, antimony, sb, chromium, cr, cobalt, co, aluminum, al, nickel, ni, titanium, ti, tungsten, w, molybdenum, mo, tantalum, ta, niobium, nb, zirconium, zr, hafnium, hf, vanadium, v, germanium, ge, indium in, copper, cu, iron, fe, manganese, mn, magnesium, mg.

4. alloy sputtering target:
ag-al, ag-cu, ag-la, ag-lu, ag-mg, al-sm, ag-sn, al-ag, al-cr, al-cu, al-dy, al-er, al-gd, al-mg, al-mg-si, al-sc, al-si, al-si-cu, al-sm, al-ta, al-ti, al-mo, al-nd, al-v, al-y, al-yb, cd-sn, ce-ag, ce-cu, ce-gd, ce-sm, ce-ti, co-al, co-b, co-cr, co-cr-al, co-cr-fe, co-fe, co-fe-b, co-fe-gd, co-gd, co-ni, co-ni-cr, co-tb, co-v, co-zr, cr-al, cr-b, cr-cu, cr-mn, cr-ni, cr-si, cr-v, cu-al, cu-ga, cu-ge, cu-in, cu-ni, cu-zn, dy-fe, dy-co, dy-fe-co, fe-al, fe-b, fe-co, etc.

5. thin film photovoltaic coating materials
cadmium sulfide cds, copper sulphide cus, cadmium telluride cdte, lead telluride pbte, mercury telluride hgte, indium telluride in2te3, antimony telluride sb2te3, bismuth telluride bi2te3, gallium telluride ga2te3, tin telluride snte, zinc telluride znte, cuingase, in2se3, ga2se3, cuinse2, cuins2, zinc stannate (zn2sno4), cadmium stannate (cd2sno4), sno2, sncl4, zno, etc.