AZO, IZO And GZO Sputtering Target

Product Description

Al2O3 and Ga2O3 doped ZnO (AZO and GZO) semiconductors are promising as alternatives to ITO for thin-film transparent electrode applications. In particular, AZO thin films, with a low resistivity and materials that are inexpensive and non-toxic, are the best candidates.

Serve as the raw materials for the sputter deposition of a variety of thin films and coatings used in the microelectronic, flat panel display, data storage, optical glass coating, and other industries, the core process technologies used in coating material and target manufacturing include:
Casting (vacuum or atmospheric), rolling, forging (hot / cold), pressing (cold, hot, uniaxial or isotropic), sintering, spraying (plasma, wire). CAM runs all these process technologies, including cutting, milling, sawing, grinding, etc.

Purity: 98%, 99%, 99.5%, 99.9%, Purity: 98%, 99%, 99.5%, 99.9%, 99.95%, 99.99%, 99.999%

1. ) Oxide sputtering target:
CEO2, ND2O3, Sm2O3, EU2O3, Gd2O3, Tb4O7, Dy2O3, Ho2O3, Er2O3, TM2O3, Yb2O3, Lu2O3, Sc2O3, Y2O3, Ta2O5, Nb2O5, Ga2O3, V2O5, ZrO2 doped with Ti, WO3, WO2.9, HfO2, MGO, Al2O3, Indium Tin Oxide, ITO (In2O3-SnO2), ZnO, Al2O3 doped ZnO (AZO), IZO (Indium Zinc Oxide, 90 wt% In2O3 / 10 wt% ZnO), Ga2O3 doped ZnO (GZO), IGZO, La0.67Sr0.33MnO3 (LSMO), ZrO2-Y2O3 stabilized (YSZ), YBCO, ZrO2+Ti, ZrO2+Zr, ZrO2+SiO2, Bi2O3, Cr2O3, MoO, MoO3, NiO, SiO, Cr-SiO, SiO2, TiO, TiO2, TiO2-Nb2O5, Ti2O3, Ti3O5, CuO/Al2O3, Sb2O3, BaO, BaTiO3, CaO, Fe2O3, Fe3O4, PbO, PbTiO3, PbZrO3, LiNbO3, SrO, SrTiO3, SrZrO3, SrBaTiO3, PZT (Plumbum Zirconate Titanate), LaNiO3, InGaZnO, CuInO2, LaAl2O3.

2. ) (Boride, Carbide, Nitride, Fluoride, Silicide, Sulfide) sputtering target
LaB6, ZrB2, CrB2, TiB2, HfB2, Mo2B5, TaB2, NbB2, W2B, WB, VB2
TiC, SiC, WC, WC-Co, WC-Ni, B4C, TaC, ZrC, Cr3C2, HfC, Mo2C, VC
Si3N4, AlN, BN, BN/SiC mixture, HfN, TaN, NbN, ZrN, TiN, VN
LaF3, CeF3, NdF3, YF3, NaF, KF, BaF2, AlF3, LiF, CaF2, SrF3, SrF2, MgF2
CoSi2, Mo5Si3, MoSi2, Ta5Si3, TaSi2, Nb5Si3, NbSi2, CrSi2, Cr3Si, HfSi2, TiSi2, Ti5Si3, ZrSi2, WSi2, VSi2, V3Si, NiSi,
CdS, ZnS, ZnS: Mn, In2S3, Sb2S3, PbS, MOS2, TaS2, WS2

3. ) Metal sputtering target:
Silver, AG, Iridium, IR, Ruthenium, Ru, La, CE, Pr, ND, Sm, EU, Gd, Tb, Dy, Ho, Er, TM, Yb, Lu, Sc, Y, Silicon, Si, Tellurium, Te, Bismuth, Bi, Tin, Sn, Zinc, Zn, Boron, B, Lead, Pb, Antimony, Sb, Chromium, Cr, Cobalt, Co, Aluminum, Al, Nickel, Ni, Titanium, Ti, Tungsten, W, Molybdenum, Mo, Tantalum, Ta, Niobium, Nb, Zirconium, Zr, Hafnium, Hf, Vanadium, V, Germanium, Ge, Indium In, Copper, Cu, Iron, Fe, Manganese, Mn, Magnesium, Mg.

4. ) Alloy sputtering target:
AG-Al, AG-Cu, AG-La, AG-Lu, AG-Mg, Al-Sm, AG-Sn, Al-AG, Al-Cr, Al-Cu, Al-Dy, Al-Er, Al-Gd, Al-Mg, Al-Mg-Si, Al-Sc, Al-Si, Al-Si-Cu, Al-Sm, Al-Ta, Al-Ti, Al-Mo, Al-ND, Al-V, Al-Y, Al-Yb, CE-AG, CE-Cu, CE-Gd, CE-Sm, CE-Ti, Co-Al, Co-B, Co-Cr, Co-Cr-Al, Co-Cr-Fe, Co-Fe, Co-Fe-B, Co-Fe-Gd, Co-Gd, Co-Ni, Co-Ni-Cr, Co-Tb, Co-V, Co-Zr, Cr-Al, Cr-B, Cr-Cu, Cr-Mn, Cr-Ni, Cr-Si, Cr-V, Cu-Al, Cu-Ga, Cu-Ge, Cu-In, Cu-Ni, Cu-Zn, Dy-Fe, Dy-Co, Dy-Fe-Co, Fe-Al, Fe-B, Fe-Co, Fe-Gd, Fe-Hf, Fe-Mn, Fe-Ni, Fe-Si, Gd-CE, Gd-Fe, Gd-Fe-Co, Gd-Er-Si, Gd-Tb, Gd-Ti, Ho-Cu, Hf-Fe, Hf-Y, In-Sb, In-Sn, In-Zn, LaB6, La-Al, La-Ni, Mg-Al, Mg-Ca, Mg-Dy, Mg-Gd, Mg-In, Mg-ND, Mg-ND-Zr-Y, Mg-Sc, Mg-Sm, Mg-Y, Mg-Zr, Mn-Fe, Mn-Ni, Mo-Cr, Mo-Si, Nb-Ti, ND-AG, ND-Fe-B, Ni-Al, Ni-Cu, Ni-Cr, Ni-Cr-Al, Ni-Cr-Si, Ni-Fe, Ni-Mn, Ni-Ti, Ni-V, Ni-V-Zr, NiYb, Ni2Yb, Ni3Yb, Ni-Yb, Ni-Zr, Sc-Ni, Sc-Zr, Sm-Co, Sm-Fe, Sm-Zr, Ta-Al, Ti-Al, Ti-Al-Cr, Ti-Al-Y, Ti-Al-V, Ti-Co, Ti-Cr, Ti-Ni, Ti-Si, TiSi2, Ti-Zr, Tb-Dy, Tb-Dy-Fe, Tb-Fe, Tb-Fe-Co, Tb-Gd-Fe-Co, V-Al, V-Co, V-Cr, V-Cu, V-Fe, V-Mo, V-Ni, V-Ti, V-Ti-Al, W-Ti, W-Si, Y-Ti, Y-Zr, Y-Zr-Mg, Zn-Al, Zr-Al, Zr-CE, Zr-Cu, Zr-Gd, Zr-Si, Zr-Ti, Zr-Y