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Item Spec
Crystal structure Mono-crystalline
Crystal method CZ
Conductance Type P
Dopant B
Dimension 156*156± 0.4
Diameter Φ200± 0.4
Wafer thickness range ...
Last Updated: May 28, 2012
We have excellent technology development capabilities, the high purity fused quartz crucibles for the solar grade mono-crystalline silicon application. At present we have eight ...
Last Updated: May 28, 2012
We have the exclusive patent products, research and produce the semiconductor key equipments. The products involve CZ-70, CZ-80, CZ-90 and CZ-110, etc. The outstanding advantage ...
Last Updated: May 28, 2012
1. Wafer Diameter: (125 x 125)+/-0, 4mm
2. Dimensions Tolerance: +/-0, 4mm
3. Thickness of wafer, measured in the center of wafer: 190+/- 10μm, ≥ 185 μm
4. TTV: ...
Last Updated: May 28, 2012
We have excellent technology development capabilities, the high purity fused quartz crucibles for the solar grade mono-crystalline silicon application. At present we have eight ...
Last Updated: May 28, 2012
We have the exclusive patent products, research and produce the semiconductor key equipments. The products involve CZ-70, CZ-80, CZ-90 and CZ-110, etc. The outstanding advantage ...
Last Updated: May 28, 2012
1. Wafer Diameter: (125 x 125)+/-0, 4mm
2. Dimensions Tolerance: +/-0, 4mm
3. Thickness of wafer, measured in the center of wafer: 190+/- 10μm, ≥ 185 μm
4. TTV: ...
Last Updated: May 28, 2012
We have excellent technology development capabilities, the high purity fused quartz crucibles for the solar grade mono-crystalline silicon application. At present we have eight ...
Last Updated: May 28, 2012
