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Stk-XP/P1 Current Transducer

Min. Order:	10 Pieces
Production Capacity:	1, 000, 000 PCS/Year.
Payment Terms:	T/T

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Product Description

Company Info

Basic Info.

Model NO.

STK-XP/P1

Type

Electromagnetic

Output Signal Type

Analog Output

Production Process

Integration

Material

Metal

Customized

Trademark

SINOMAGS

Specification

CE, UL, 9001

Origin

Ningbo, Zhejiang

Product Description

Features;
Open loop Principle
output voltage Signals
Single Power Supply +5V
Isolation Voltage 3kV
Low Power Consumption
PCB mounting platform
Factory calibrated
Advantages
High accuracy
Low Insertion Loss
Compact disign
High Creepage distance
High immunity to external interference
Strong insulation isolation
Low temperature coefficient
Appications
Servo moto drives
Battery supplied application
UPS
SMPS
Power supplies go weiding applicaiton
AC Variable speed drives
MPPT

Specifications and Models
Primary Nominal current IPN (A)	Primary current measuring range IPM (A)	Connection	Type
10	±25	PCB	STK-10XP/P1
16	±40	PCB	STK-16XP/P1
20	±50	PCB	STK-20XP/P1
32	±80	PCB	STK-32XP/P1
40	±100	PCB	STK-40XP/P1
50	±125	PCB	STK-50XP/P1

Electrical data STK-10XP/P1

Parameter	Symbol	Unit	Min	Type	Max	Comment
Primary nominal rms current	IPN	A		10
Primary current,measuring range	IPM	A	-25		25
Number of primary turns	NP	-		1
Supply voltage1)	VC	V	4.5	5	5.5
Current consumption	IC	mA		15	20
Reference voltage(output)	VREF	V	2.48	2.5	2.52	Internal reference
Output voltage range@ IP=IPM	VOUT-VREF	V	-2		2
VREF output resistance	RREF	Ω	130	200	300	series
VOUT output resistance	ROUT	Ω		2	5	series
Electrical offset voltage @IP=0	VOE	mV	-5		5	VOUT-VREF@VREF=2.5V
Capacitive loading	CL	nF	0		10
Electrical offset current referred to primary	IOE	mA	-62.5		62.5
Temperature coefficient of VREF	TCVREF	ppm/K	-150		150	-40ºC85ºC
Temperature coefficient of VOUT-VREF @IP=0	TCVOE	mV/K	-0.075		0.075	-40ºC85ºC
Temperature coefficient of IOE	TCIOE	mA/K	-0.94		0.94	-40ºC85ºC
Theoretical sensitivity	GTH	mV/A		62.5		625mV @I=IPN
Sensitivity error	εG	% of IPN	-0.5		0.5	Factory adjustment
Temperature coefficient G	TCG	ppm/K	-200		200	-40ºC85ºC
Linearity error 0IPN	εL	% of IPN	-0.5		0.5
Linearity error 0IPM	εL	% of IPM	-0.5		0.5
Response time@ 10% of IPN	tra	us			1
Response time@ 90% of IPN	tr	us			2
Frequency bandwidth( -3 dB)	BW	KHZ		400
Accuracy@I=IPN		% of IPN	-1		1
Accuracy@I=IPN ,TA=+85ºC	85ºC	% of IPN	-2.5		2.5	See formula note2)

Electrical data STK-16XP/P1

Parameter	Symbol	Unit	Min	Type	Max	Comment
Primary nominal rms current	IPN	A		16
Primary current,measuring range	IPM	A	-40		40
Number of primary turns	NP	-		1
Supply voltage1)	VC	V	4.5	5	5.5
Current consumption	IC	mA		15	20
Reference voltage(output)	VREF	V	2.48	2.5	2.52	Internal reference
Output voltage range@ IP=IPM	VOUT-VREF	V	-2		2
VREF output resistance	RREF	Ω	130	200	300	series
VOUT output resistance	ROUT	Ω		2	5	series
Electrical offset voltage @IP=0	VOE	mV	-5		5	VOUT-VREF@VREF=2.5V
Capacitive loading	CL	nF	0		10
Electrical offset current referred to primary	IOE	mA	-100		100
Temperature coefficient of VREF	TCVREF	ppm/K	-150		150	-40ºC85ºC
Temperature coefficient of VOUT-VREF @IP=0	TCVOE	mV/K	-0.075		0.075	-40ºC85ºC
Temperature coefficient of IOE	TCIOE	mA/K	-1.5		1.5	-40ºC85ºC
Theoretical sensitivity	GTH	mV/A		625/16		625mV @I=IPN
Sensitivity error	εG	% of IPN	-0.5		0.5	Factory adjustment
Temperature coefficient G	TCG	ppm/K	-200		200	-40ºC85ºC
Linearity error 0IPN	εL	% of IPN	-0.5		0.5
Linearity error 0IPM	εL	% of IPM	-0.5		0.5
Response time@ 10% of IPN	tra	us			1
Response time@ 90% of IPN	tr	us			2
Frequency bandwidth( -3 dB)	BW	KHZ		400
Accuracy@I=IPN		% of IPN	-1		1
Accuracy@I=IPN ,TA=+85ºC	85ºC	% of IPN	-2.5		2.5	See formula note2)

Electrical data STK-20XP/P1

Parameter	Symbol	Unit	Min	Type	Max	Comment
Primary nominal rms current	IPN	A		20
Primary current,measuring range	IPM	A	-50		50
Number of primary turns	NP	-		1
Supply voltage1)	VC	V	4.5	5	5.5
Current consumption	IC	mA		15	20
Reference voltage(output)	VREF	V	2.48	2.5	2.52	Internal reference
Output voltage range@ IP=IPM	VOUT-VREF	V	-2		2
VREF output resistance	RREF	Ω	130	200	300	series
VOUT output resistance	ROUT	Ω		2	5	series
Electrical offset voltage @IP=0	VOE	mV	-5		5	VOUT-VREF@VREF=2.5V
Capacitive loading	CL	nF	0		10
Electrical offset current referred to primary	IOE	mA	-125		125
Temperature coefficient of VREF	TCVREF	ppm/K	-150		150	-40ºC85ºC
Temperature coefficient of VOUT-VREF @IP=0	TCVOE	mV/K	-0.075		0.075	-40ºC85ºC
Temperature coefficient of IOE	TCIOE	mA/K	-1.88		1.88	-40ºC85ºC
Theoretical sensitivity	GTH	mV/A		31.25		625mV @I=IPN
Sensitivity error	εG	% of IPN	-0.5		0.5	Factory adjustment
Temperature coefficient G	TCG	ppm/K	-200		200	-40ºC85ºC
Linearity error 0IPN	εL	% of IPN	-0.5		0.5
Linearity error 0IPM	εL	% of IPM	-0.5		0.5
Response time@ 10% of IPN	tra	us			1
Response time@ 90% of IPN	tr	us			2
Frequency bandwidth( -3 dB)	BW	KHZ		400
Accuracy@I=IPN		% of IPN	-1		1
Accuracy@I=IPN ,TA=+85ºC	85ºC	% of IPN	-2.5		2.5	See formula note2)

Electrical data STK-32XP/P1

Parameter	Symbol	Unit	Min	Type	Max	Comment
Primary nominal rms current	IPN	A		32
Primary current,measuring range	IPM	A	-80		80
Number of primary turns	NP	-		1
Supply voltage1)	VC	V	4.5	5	5.5
Current consumption	IC	mA		15	20
Reference voltage(output)	VREF	V	2.48	2.5	2.52	Internal reference
Output voltage range@ IP=IPM	VOUT-VREF	V	-2		2
VREF output resistance	RREF	Ω	130	200	300	series
VOUT output resistance	ROUT	Ω		2	5	series
Electrical offset voltage @IP=0	VOE	mV	-5		5	VOUT-VREF@VREF=2.5V
Capacitive loading	CL	nF	0		10
Electrical offset current referred to primary	IOE	mA	-200		200
Temperature coefficient of VREF	TCVREF	ppm/K	-150		150	-40ºC85ºC
Temperature coefficient of VOUT-VREF @IP=0	TCVOE	mV/K	-0.075		0.075	-40ºC85ºC
Temperature coefficient of IOE	TCIOE	mA/K	-3		3	-40ºC85ºC
Theoretical sensitivity	GTH	mV/A		625/32		625mV @I=IPN
Sensitivity error	εG	% of IPN	-0.5		0.5	Factory adjustment
Temperature coefficient G	TCG	ppm/K	-200		200	-40ºC85ºC
Linearity error 0IPN	εL	% of IPN	-0.5		0.5
Linearity error 0IPM	εL	% of IPM	-0.5		0.5
Response time@ 10% of IPN	tra	us			1
Response time@ 90% of IPN	tr	us			2
Frequency bandwidth( -3 dB)	BW	KHZ		400
Accuracy@I=IPN		% of IPN	-1		1
Accuracy@I=IPN ,TA=+85ºC	85ºC	% of IPN	-2.5		2.5	See formula note2)

Electrical data STK-40XP/P1

Parameter	Symbol	Unit	Min	Type	Max	Comment
Primary nominal rms current	IPN	A		40
Primary current,measuring range	IPM	A	-100		100
Number of primary turns	NP	-		1
Supply voltage1)	VC	V	4.5	5	5.5
Current consumption	IC	mA		15	20
Reference voltage(output)	VREF	V	2.48	2.5	2.52	Internal reference
Output voltage range@ IP=IPM	VOUT-VREF	V	-2		2
VREF output resistance	RREF	Ω	130	200	300	series
VOUT output resistance	ROUT	Ω		2	5	series
Electrical offset voltage @IP=0	VOE	mV	-5		5	VOUT-VREF@VREF=2.5V
Capacitive loading	CL	nF	0		10
Electrical offset current referred to primary	IOE	mA	-250		250
Temperature coefficient of VREF	TCVREF	ppm/K	-150		150	-40ºC85ºC
Temperature coefficient of VOUT-VREF @IP=0	TCVOE	mV/K	-0.075		0.075	-40ºC85ºC
Temperature coefficient of IOE	TCIOE	mA/K	-3.75		3.75	-40ºC85ºC
Theoretical sensitivity	GTH	mV/A		15.625		625mV @I=IPN
Sensitivity error	εG	% of IPN	-0.5		0.5	Factory adjustment
Temperature coefficient G	TCG	ppm/K	-200		200	-40ºC85ºC
Linearity error 0IPN	εL	% of IPN	-0.5		0.5
Linearity error 0IPM	εL	% of IPM	-0.5		0.5
Response time@ 10% of IPN	tra	us			1
Response time@ 90% of IPN	tr	us			2
Frequency bandwidth( -3 dB)	BW	KHZ		400
Accuracy@I=IPN		% of IPN	-1		1
Accuracy@I=IPN ,TA=+85ºC	85ºC	% of IPN	-2.5		2.5	See formula note2)

Electrical data STK-50XP/P1

Parameter	Symbol	Unit	Min	Type	Max	Comment
Primary nominal rms current	IPN	A		50
Primary current,measuring range	IPM	A	-125		125
Number of primary turns	NP	-		1
Supply voltage1)	VC	V	4.5	5	5.5
Current consumption	IC	mA		15	20
Reference voltage(output)	VREF	V	2.48	2.5	2.52	Internal reference
Output voltage range@ IP=IPM	VOUT-VREF	V	-2		2
VREF output resistance	RREF	Ω	130	200	300	series
VOUT output resistance	ROUT	Ω		2	5	series
Electrical offset voltage @IP=0	VOE	mV	-5		5	VOUT-VREF@VREF=2.5V
Capacitive loading	CL	nF	0		10
Electrical offset current referred to primary	IOE	mA	-313		313
Temperature coefficient of VREF	TCVREF	ppm/K	-150		150	-40ºC85ºC
Temperature coefficient of VOUT-VREF @IP=0	TCVOE	mV/K	-0.05		0.05	-40ºC85ºC
Temperature coefficient of IOE	TCIOE	mA/K	-3.125		3.125	-40ºC85ºC
Theoretical sensitivity	GTH	mV/A		12.5		625mV @I=IPN
Sensitivity error	εG	% of IPN	-0.5		0.5	Factory adjustment
Temperature coefficient G	TCG	ppm/K	-200		200	-40ºC85ºC
Linearity error 0IPN	εL	% of IPN	-0.5		0.5
Linearity error 0IPM	εL	% of IPM	-0.5		0.5
Response time@ 10% of IPN	tra	us			1
Response time@ 90% of IPN	tr	us			2
Frequency bandwidth( -3 dB)	BW	KHZ		400
Accuracy@I=IPN		% of IPN	-1		1
Accuracy@I=IPN ,TA=+85ºC	85ºC	% of IPN	-2.5		2.5	See formula note2)

Address: Bulding 10, Floor 2, Zhongguan Road No. 1188, Zhenhai District, Ningbo, Zhejiang, China

Business Type: Manufacturer/Factory

Business Range: Electrical & Electronics

Management System Certification: ISO 9001

Main Products: Current Sensor, Tmr Magnetic Sensor

Company Introduction: Sinomags is a world leader in design, manufacture and supply of GMR/TMR wafer, leading edge magnetic sensor, and providing excellent performance, high qualitysolutions for measuring electrical parameters. Our innovation is focus on delivery high accurancy, fast -response, compact disigned current transducer.

Sinomags was founded in 2012 by a team of top experts from magnetism research field and magnetic recording industries with a topline GMR/TMR wafer manufacturing Fab in Euro, and current transducer plants in NingBo, China.

Mission:

Sinomags is committed to deliver state-of-the art magnetic sensor

Technologies and solutions to the industries. We thrive by working with our customers to understand their problems and explore solutions. And our goal is to keep on doing just that solving tough problems that result in world-changing innovations.

Innovation:

Sinomags leads primarily by technical innovation and shares a deep belief in the power of technology. Research and development has been the hallmark of sinomags′s success with independent intellectual property rights and more than 40 patents authorized.

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