800V 7A N-Channel Enhancement Mode Power Mosfet F7n80 to-220f **%off
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
7N80/I7N80/E7N80
F7N80
Maximum Drian-Source DC Voltage
VDS
800
V
Maximum Gate-Drain Voltage
VGS
±30
V
Drain Current(continuous)
ID(T=25ºC)
7
A
(T=100ºC)
4
A
Drain Current(Pulsed)
IDM
28
A
Single Pulse Avalanche Energy
EAS
150
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
110A 60V N-Channel Enhancement Mode Power Mosfet Dh066n06e
US$ 0.01-0.2
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DH066N06/DH066N06D
Drian-to-Source Voltage
VDSS
60
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
110
A
(T=100ºC)
78
A
Drain Current(Pulsed)
IDM
440
A
Single Pulse Avalanche Energy
EAS
484
mJ
Total
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
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Power Semiconductor · 2023+ · Power Electronic Components
1200 V, 110 a, [Bc018sg12swsd], High Efficiency N-Channel Silicon Carbide Power Mosfet
US$ 12.11
/ Piece
10 Pieces (MOQ)
10 Pieces (MOQ)
BC018SG12SWSD N-Channel Silicon Carbide Power MOSFET 1200 V, 110 A , 18mΩ Product Description Features • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Avalanche Ruggedness • Halogen Free, RoHS Compliant Applications
- Shenzhen Xindong Technology Co., Ltd
- Guangdong, China
- Contact Now
Discrete Device · N-Type Semiconductor
21A 650V N-Channel Super Junction Power Mosfet Dhsj21n65W to-247
US$ 0.01-0.2
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
Features
Fast switching
Low on resistance(Rdson≤0.165Ω)
Low gate charge(Typ: 50nC)
Low reverse transfer capacitances(Typ: 3.5pF)
100% Single Pulse Avalanche Energy Test
100% ΔVDS Test
Applications
Power factor correction(PFC).
Switched mode power supplies(SMPS).
Uninterru
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
5A 200V N-Channel Enhancement Mode Power Mosfet B5n20 to-251
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
5N20/I5N20/E5N20/B5N20/D5N20
F5N20
Drian-Source Voltage
VDS
200
V
Gate-Drain Voltage
VGS
±30
V
Drain Current(continuous)
ID(T=25ºC)
5
A
(T=100ºC)
3.4
A
Drain Current(Pulsed)
IDM
20
A
Single Pulse Avalanche Energy
EAS
125
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
N-Type Semiconductor · Solar Cell · Integrated Circuits Device
Solar/UPS High Voltage Single N-Channel Power Mosfet
US$ 0.1-0.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
Product Description
General Description
The high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The Generic ser
- Shanghai Winture Electric Co., Ltd.
-
- Shanghai, China
- Contact Now
2010+ · Refrigerator · Element Semiconductor
N-Channel 800W 900V Power Mosfet To252 Package Osg80r900df
US$ 0.1-0.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
Product Description
General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
- Shanghai Winture Electric Co., Ltd.
-
- Shanghai, China
- Contact Now
Discrete Device · N-Type Semiconductor
5A 650V N-Channel Enhancement Mode Power Mosfet F5n65
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
F5N65
Drian-to-Source Voltage
VDSS
650
V
Gate-to-Drian Voltage
VGSS
±30
V
Drain Current(continuous)
ID(T=25ºC)
5
A
(T=100ºC)
3.1
A
Drain Current(Pulsed)
IDM
18
A
Single Pulse Avalanche Energy
EAS
230
mJ
Total Dissipation
Ta=25
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
DIP(Dual In-line Package) · Optoelectronic Semiconductor · RoHS
650V, N-Channel Planar Mosfet 10n65
US$ 0.01
/ Piece
1000 Pieces (MOQ)
1000 Pieces (MOQ)
650V,N-Channel planar MOSFET 10N65
Datasheet
PRODUCT SERIES
Product Pictures
FAQ
1, Are you Manufacturer or trading company?
We are a manufacturer only in diode, bridge rectifier and automotive rectifier diode. We could supply competitive price and fast delivery and good
- Changzhou Shunye Electronics Co., Ltd.
-
- Jiangsu, China
- Contact Now
Discrete Device · N-Type Semiconductor
11A 650V N-Channel Super Junction Power Mosfet Dhdsj11n65 to-252b
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DHSJ11N65/
DHISJ11N65/
DHESJ11N65/
DHBSJ11N65/
DHDSJ11N65
DHFSJ11N65
Drian-to-Source Voltage
VDSS
650
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
10.8
A
(T=100ºC)
6.9
A
Drain Current(Pulsed)
IDM
33
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
-
What are the typical characteristics of N-Channel MOSFETs?
N-Channel MOSFETs are known for their high electron mobility and increased electrical conductivity compared to other semiconductors. These unique properties make them valuable in various electronic applications, providing efficiency and dependability in circuit design.
-
How can I identify reputable suppliers for N-Channel MOSFETs in China?
Identifying reputable suppliers involves researching company backgrounds, validating certifications, and requesting product samples for quality testing. Look for established partnerships, transparent communications, and adherence to industry standards to ensure a reliable supply chain.
-
What advantages does wholesale purchase of N-Channel MOSFETs offer?
Buyers gain cost efficiencies through bulk purchasing of N-Channel MOSFETs, benefiting from discounted prices and scale of production. Wholesale transactions also provide flexibility in meeting specific demands and enable customization opportunities for tailored semiconductor solutions.
Discrete Device · N-Type Semiconductor
135V 180A N-Channel Enhancement Mode Power Mosfet Dse043n14n to-263
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
Drian-to-Source Voltage
VDSS
135
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
180
A
(T=100ºC)
127
A
Drain Current(Pulsed)
IDM
720
A
Single Pulse Avalanche Energy
EAS
1156
mJ
Total Dissipation
Ta=2
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
10A 600V N-Channel Enhancement Mode Power Mosfet F10n60 to-220f
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
10N60/I10N60/E10N60
F10N60
Maximum Drian-Source DC Voltage
VDS
600
V
Maximum Gate-Drain Voltage
VGS
±30
V
Drain Current(continuous)
ID(T=25ºC)
10
A
(T=100ºC)
6.3
A
Drain Current(Pulsed)
IDM
40
A
Single Pulse Avalanche Energy
E
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
70A 100V N-Channel Enhancement Mode Power Mosfet Fd70n20 to-220f
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
D70N10/ID70N10/ED70N10/BD70N10/DD70N10
FD70N10
Drian-Source Voltage
VDS
100
V
Gate-Source Voltage
VGS
±25
V
Drain Current(continuous)
ID(T=25ºC)
73
A
(T=100ºC)
51
A
Drain Current(Pulsed)
IDM
219
A
Single Pulse Avalanche Energy
EA
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
18A 1200V N-Channel Sic Power Mosfet Dhc1m160120d to-3p
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
18A 1200V N-channel SIC Power MOSFET
1 Description
This product family offers state of the art performance. It is designed for high frequency applications where high
efficiency and high reliability are required. It is qualified and manufactured on the productive 6 inch SiC line in China
fully ow
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Dhfsj15n65 to-220f 15A 650V N-Channel Super Junction Power Mosfet
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DHSJ15N65//DHISJ15N65/DHESJ15N65
DHFSJ15N65
Drian-to-Source Voltage
VDSS
650
V
Gate-to-Source Voltage
VGSS
±30
V
Drain Current(continuous)
ID(T=25ºC)
15
A
(T=100ºC)
9
A
Drain Current(Pulsed)
IDM
45
A
Single Pulse Avalanche Energy
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor · RoHS
Hot Sale 150A 30V N-Channel Enhancement Mode Power Mosfet Dh025n03D to-252 & Dh025n03e to-263
US$ 0.01-0.12
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DH025N03/DHI025N03/DHE025N03/DHB025N03/DHD025N03
DHF025N03
Drian-to-Source Voltage
VDSS
30
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
150
A
(T=100ºC)
105
A
Drain Current(Pulsed)
IDM
600
A
Single Pu
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
50A 60V N-Channel Enhancement Mode Power Mosfet Dh50n06 to-220
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DH50N06/DHI50N06/DHE50N06/DHB50N06/DHD50N06
DHF50N06
Drian-to-Source Voltage
VDSS
60
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
50
A
(T=100ºC)
30
A
Drain Current(Pulsed)
IDM
200
A
Single Pulse Avalanc
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
12A 60V N-Channel Enhancement Mode Power Mosfet D12n06
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
Features
Low on resistance
Low gate charge
Fast switching
Low reverse transfer capacitances
100% single pulse avalanche energy test
100% ΔVDS test
Applications
Power switching applications
Hard switched and high frequency circuits
Uninterruptible power supply
PARAMETER
SYMBOL
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
68A 1200V N-Channel Sic Power Mosfet Dcc040m120A2 to-247-3L
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
68A 1200V N-channel SIC Power MOSFET
1 Description
This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required.
Features
Higher System Efficiency
Reduced Cooling Requirements
Increased Power
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
2A 600V N-Channel Enhancement Mode Power Mosfet D2n60 to-252b
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
D2N60
Drian-to-Source Voltage
VDSS
600
V
Gate-to-Drian Voltage
VGSS
±30
V
Drain Current(continuous)
ID(T=25ºC)
2
0A
(T=100ºC)
1.3
A
Drain Current(Pulsed)
IDM
8
A
Single Pulse Avalanche Energy
EAS
60
mJ
Total Dissipation
Ta=25&
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
47A 100V N-Channel Enhancement Mode Power Mosfet Dh135n10p Dfn5X6
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DH135N10P
Drian-to-Source Voltage
VDSS
100
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
47
A
(T=100ºC)
33
A
Drain Current(Pulsed)
IDM
188
A
Single Pulse Avalanche Energy
EAS
360
mJ
Total Dissipation
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
600V 10A N-Channel Enhancement Mode Power Mosfet 10n60 to-220
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
10N60/I10N60/E10N60
F10N60
Maximum Drian-Source DC Voltage
VDS
600
V
Maximum Gate-Drain Voltage
VGS
±30
V
Drain Current(continuous)
ID(T=25ºC)
10
A
(T=100ºC)
6.3
A
Drain Current(Pulsed)
IDM
40
A
Single Pulse Avalanche Energy
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Dhs020n85 to-220 180A 85V N-Channel Enhancement Mode Power Mosfet
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DHS020N85/DHS020N85E
DHS020N85D/DHS020N85B
Drian-to-Source Voltage
VDSS
85
V
Gate-to-Drian Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
240
A
(T=100ºC)
152
A
Drain Current(Pulsed)
IDM
720
A
Single Pulse Avalanche Energy
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
19A 80V N-Channel Enhancement Mode Power Mosfet Dh300n08 to-220c
US$ 0.01-0.2
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DH300N08
/DH300N08E
DH300N08B/DH300N08D
DH300
N08F
Drian-to-Source Voltage
VDSS
80
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
19
A
(T=100ºC)
13
A
Drain Current(Pulsed)
IDM
76
A
Single Pulse Aval
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
140A 80V N-Channel Enhancement Mode Power Mosfet E140n08 to-263
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
140N08/I140N08/E140N08
F140N08
Drian-Source Voltage
VDSS
80
V
Gate-Source Voltage
VGSS
±25
V
Drain Current(continuous)
ID(T=25ºC)
140
A
(T=100ºC)
95
A
Drain Current(Pulsed)
IDM
500
A
Single Pulse Avalanche Energy
EAS
1225
mJ
T
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor · RoHS
Hot Sale 650V 4A N-Channel Enhancement Mode Power Mosfet D4n65 to-252
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
4N65/I4N65/E4N65/B4N65/D4N65
F4N65
Drian-Source Voltage
VDSS
650
V
Gate-to-Source Voltage
VGSS
±30
V
Drain Current(continuous)
ID(T=25ºC)
4
A
(T=100ºC)
2.6
A
Drain Current(Pulsed)
IDM
16
A
Single Pulse Avalanche Energy
EAS
20
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
110A 30V N-Channel Enhancement Mode Power Mosfet 110n03 to-220
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
Maximum Drian-Source DC Voltage
VDSS
30
V
Maximum Gate-Drain Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
110
A
(T=100ºC)
78
A
Drain Current(Pulsed)
IDM
440
A
Single Pulse Avalanche Energy
EAS
870
mJ
Total Dissi
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
5A 650V N-Channel Enhancement Mode Power Mosfet 5n65c
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
5N65C
Drian-to-Source Voltage
VDSS
650
V
Gate-to-Drian Voltage
VGSS
±30
V
Drain Current(continuous)
ID(T=25ºC)
5
A
(T=100ºC)
3.1
A
Drain Current(Pulsed)
IDM
18
A
Single Pulse Avalanche Energy
EAS
230
mJ
Total Dissipation
Ta=25
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
DHD150n03 to-252 150A 30V N-Channel Enhancement Mode Power Mosfet
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
SYMBOL
VALUE
UNIT
Min
Typ.
Max
BVDSS
40
-
45
V
ID (T=25ºC)
-
-
50
A
BVGSS
±20
V
VTH
1
2
V
EAS
-
-
121
mJ
Ptot
-
-
52
W
Rdson
14.5
-
20.0
mΩ
Features
Fast Switching
Low ON Resistance
Low Gate Charge
Low Reverse Transfer Capacitan
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
80A 80V N-Channel Enhancement Mode Power Mosfet Dh80n08 to-220
US$ 0.19
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DH80N08/DHI80N08/DHE80N08/DHB80N08/DHD80N08
DHF80N08
Drian-to-Source Voltage
VDSS
80
V
Gate-to-Source Voltage
VGSS
±25
V
Drain Current(continuous)
ID(T=25ºC)
80
A
(T=100ºC)
65
A
Drain Current(Pulsed)
IDM
320
A
Single Pulse Aval
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
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