800V 7A N-Channel Enhancement Mode Power Mosfet F7n80 to-220f **%off
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
7N80/I7N80/E7N80
F7N80
Maximum Drian-Source DC Voltage
VDS
800
V
Maximum Gate-Drain Voltage
VGS
±30
V
Drain Current(continuous)
ID(T=25ºC)
7
A
(T=100ºC)
4
A
Drain Current(Pulsed)
IDM
28
A
Single Pulse Avalanche Energy
EAS
150
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Discrete Device · N-Type Semiconductor
110A 60V N-Channel Enhancement Mode Power Mosfet Dh066n06e
US$ 0.01-0.2
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DH066N06/DH066N06D
Drian-to-Source Voltage
VDSS
60
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
110
A
(T=100ºC)
78
A
Drain Current(Pulsed)
IDM
440
A
Single Pulse Avalanche Energy
EAS
484
mJ
Total
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Discrete Device · N-Type Semiconductor
21A 650V N-Channel Super Junction Power Mosfet Dhsj21n65W to-247
US$ 0.01-0.2
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
Features
Fast switching
Low on resistance(Rdson≤0.165Ω)
Low gate charge(Typ: 50nC)
Low reverse transfer capacitances(Typ: 3.5pF)
100% Single Pulse Avalanche Energy Test
100% ΔVDS Test
Applications
Power factor correction(PFC).
Switched mode power supplies(SMPS).
Uninterru
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- Jiangsu, China
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5A 200V N-Channel Enhancement Mode Power Mosfet B5n20 to-251
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
5N20/I5N20/E5N20/B5N20/D5N20
F5N20
Drian-Source Voltage
VDS
200
V
Gate-Drain Voltage
VGS
±30
V
Drain Current(continuous)
ID(T=25ºC)
5
A
(T=100ºC)
3.4
A
Drain Current(Pulsed)
IDM
20
A
Single Pulse Avalanche Energy
EAS
125
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- Jiangsu, China
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N-Type Semiconductor · Compound Semiconductor · QFP/PFP
Solar/UPS High Voltage Single N-Channel Power Mosfet
US$ 0.1-0.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
Product Description
General Description
The high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The Generic ser
- Shanghai Winture Electric Co., Ltd.
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- Shanghai, China
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SMD · Discrete Device · ST
N-Channel 800W 900V Power Mosfet To252 Package Osg80r900df
US$ 0.1-0.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
Product Description
General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
- Shanghai Winture Electric Co., Ltd.
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- Shanghai, China
- ISO 9001, ISO 14001
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Discrete Device · Power Electronic Components · SMD
100V 40A Nce0140ka Nce N-Channel Enhancement Mode Power Mosfet with to-252
US$ 0.001-1.2
/ Piece
2500 Pieces (MOQ)
2500 Pieces (MOQ)
Detailed Photos
Product Description
NCE provides N-type 12V~200V and P-type 12V~150V Trench power MOSFETs, adopting advanced process manufacturing technology, better process conditions, and finely optimized device structure to continuously optimize on-resistance, switching characteristics, r
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Dhs130n10d to-252 130A 100V N-Channel Enhancement Mode Power Mosfet
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DHS130N10/DHS130N10I/DHS130N10E/DHS130N10B/DHS130N10D
DHS130N10F
Drian-to-Source Voltage
VDSS
100
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
130
A
(T=100ºC)
91
A
Drain Current(Pulsed)
IDM
392
A
Sin
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- Jiangsu, China
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Dh90n040r to-220 150A 90V N-Channel Enhancement Mode Power Mosfet
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
SYMBOL
VALUE
UNIT
Min
Typ.
Max
BVDSS
90
-
98
V
ID (T=25ºC)
-
-
150
A
BVGSS
±20
V
VTH
2
4
V
EAS
-
-
196
mJ
Ptot
-
-
189
W
Rdson
4.0
-
4.9
mΩ
Features
Fast Switching
High avalanche Current
Low ON Resistance
Low Gate Charge
Low Re
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- Jiangsu, China
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Discrete Device · N-Type Semiconductor
68A 1200V N-Channel Sic Power Mosfet Dccf080m120A2 to-247-4L
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
68A 1200V N-channel SIC Power MOSFET
1 Description
This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required.
Features
Higher System Efficiency
Reduced Cooling Requirements
Increased Power
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- Jiangsu, China
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-
What are the typical characteristics of N-Channel MOSFETs?
N-Channel MOSFETs are known for their high electron mobility and increased electrical conductivity compared to other semiconductors. These unique properties make them valuable in various electronic applications, providing efficiency and dependability in circuit design.
-
How can I identify reputable suppliers for N-Channel MOSFETs in China?
Identifying reputable suppliers involves researching company backgrounds, validating certifications, and requesting product samples for quality testing. Look for established partnerships, transparent communications, and adherence to industry standards to ensure a reliable supply chain.
-
What advantages does wholesale purchase of N-Channel MOSFETs offer?
Buyers gain cost efficiencies through bulk purchasing of N-Channel MOSFETs, benefiting from discounted prices and scale of production. Wholesale transactions also provide flexibility in meeting specific demands and enable customization opportunities for tailored semiconductor solutions.
40V 120A Nce40h12 Nce N-Channel Enhancement Mode Power Mosfet with to-220
US$ 0.142-0.163
/ Piece
1000 Pieces (MOQ)
1000 Pieces (MOQ)
Detailed Photos
Product Description
NCE provides N-channel SGT-I series power MOSFETs with breakdown voltage levels ranging from 30V to 250V. NCE's technology and excellent quality management ensure excellent product performance and reliability, and provide cost-effective solutions while red
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Element Semiconductor · 2023+ · DIP(Dual In-line Package)
NCE65T2K4I NCE N-Channel Super Junction Power Mosfet
US$ 0.122-0.143
/ Piece
4000 Pieces (MOQ)
4000 Pieces (MOQ)
Detailed Photos
Product Description
NCE offers N-channel SJ-III series power MOSFETs with breakdown voltage ratings ranging from 500V to 800V, which are ideal for switching power supply applications due to their good on-resistance, very low gate charge, excellent switching speed, and competi
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Discrete Device · N-Type Semiconductor
68A 1200V N-Channel Sic Power Mosfet Dcc040m120A2 to-247-3L
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
68A 1200V N-channel SIC Power MOSFET
1 Description
This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required.
Features
Higher System Efficiency
Reduced Cooling Requirements
Increased Power
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- Jiangsu, China
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Discrete Device · N-Type Semiconductor
130A 85V N-Channel Enhancement Mode Power Mosfet Dh050n85e to-263
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
SYMBOL
VALUE
UNIT
Min
Typ.
Max
BVDSS
85
-
85
V
ID (T=25ºC)
-
-
100
A
BVGSS
±20
V
VTH
2
4
V
EAS
-
-
1156
mJ
Ptot
-
-
300
W
Rdson
-
5
6
mΩ
Features
Fast Switching
Low ON Resistance
Low Gate Charge
Low Reverse Transfer Capacitances
H
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- Jiangsu, China
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60V 90A Ncep6090K Nce N-Channel Super Trench Power Mosfet with to-252-2L
US$ 0.01-1.2
/ Piece
2500 Pieces (MOQ)
2500 Pieces (MOQ)
Detailed Photos
Product Description
NCE provides N-channel SGT-I series power MOSFETs with breakdown voltage levels ranging from 30V to 250V. NCE's technology and excellent quality management ensure excellent product performance and reliability, and provide cost-effective solutions while red
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- Guangdong, China
- ISO 9001, ISO 14001
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Discrete Device · RoHS · N-Type Semiconductor
Hot Sale 145A 60V N-Channel Enhancement Mode Power Mosfet Dh045n06 to-220c
US$ 0.01-0.2
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DH045N06
DH045N06I/DH045N06E
DH045N06B/DH045N06D
DH045N0
6F
Drian-to-Source Voltage
VDSS
60
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
145
A
(T=100ºC)
101
A
Drain Current(Pulsed)
IDM
580
A
Si
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- Jiangsu, China
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Discrete Device · N-Type Semiconductor
10.6A 700V N-Channel Super Junction Power Mosfet Djd420n70t to-252
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
Maximum Drian-Source DC Voltage
VDS
700
V
Maximum Gate-Drain Voltage
VGS
±20
V
Drain Current(continuous)
ID(T=25ºC)
10.6
A
(T=100ºC)
7.6
A
Drain Current(Pulsed)
IDM
40
A
Single Pulse Avalanche Energy
EAS
200
mJ
Peak Diode Recove
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DIP(Dual In-line Package) · Logic IC · Television
PC Power Pdfn 8*8 Package N-Channel 800W 300V Power Mosfet
US$ 0.1-0.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
General Description
The high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The Generic series is optimized for
- Shanghai Winture Electric Co., Ltd.
-
Suppliers with verified business licenses
- Shanghai, China
- ISO 9001, ISO 14001
- Contact Now
Discrete Device · RoHS · N-Type Semiconductor
Hot Sale 60A 68V N-Channel Enhancement Mode Power Mosfet Dh105n07D to-252
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DH105N07/DH105N07I/DH105N07EDH105N07B/DH105N07D
DH105N07F
Drian-to-Source Voltage
VDSS
68
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
60
A
(T=100ºC)
42
A
Drain Current(Pulsed)
IDM
240
A
Single Pulse Av
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N-Type Semiconductor · Element Semiconductor · SMD
Nce4015s Nce N-Channel Enhancement Mode Power Mosfet
US$ 0.1-1.2
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
Detailed Photos
Product Description
NCE provides N-type 12V~200V and P-type 12V~150V Trench power MOSFETs, adopting advanced process manufacturing technology, better process conditions, and finely optimized device structure to continuously optimize on-resistance, switching characteristics, reliabi
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150V 265A Ncep040nh150ll Nce N-Channel Super Trench III Power Mosfet with Toll
US$ 0.1-1.2
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
Detailed Photos
Product Description
NCE is progressively launching its third-generation shielded gate trench power MOSFETs. Compared to the previous generation, the new products feature an over 20% reduction in characteristic on-resistance. Additionally, ESD capability, high-current turn-off capab
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Discrete Device · N-Type Semiconductor
120A 1200V N-Channel Sic Power Mosfet Dcc016m120g2/Dccf016m120g2 to-247
US$ 0.01-0.2
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
115A 1200V N-channel SIC Power MOSFET
1 Description
This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required.
Features
Higher System Efficiency
Reduced Cooling Requirements
Increased Powe
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- Jiangsu, China
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Discrete Device · N-Type Semiconductor
40mΩ 650V N-Channel Sic Power Mosfet Dcc040m65g2 to-247-3L
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
5A 1700V N-channel SIC Power MOSFET
Description
This product family offers state of the art performance. It is
designed for high frequency applications where high
efficiency and high reliability are required.
Features
Higher System Efficiency
Reduced Cooling Requirements
Increase
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- Jiangsu, China
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11A 650V N-Channel Super Junction Power Mosfet Dhesj11n65 to-263
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DHSJ11N65//DHISJ11N65/DHESJ11N65/DHBSJ11N65/DHDSJ11N65
DHFSJ11N65
Drian-to-Source Voltage
VDSS
650
V
Gate-to-Source Voltage
VGSS
±30
V
Drain Current(continuous)
ID(T=25ºC)
11
A
(T=100ºC)
7
A
Drain Current(Pulsed)
IDM
33
A
Single P
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Nce65TF099t N-Channel Super Junction Power Mosfet
US$ 1.302-1.49
/ Piece
600 Pieces (MOQ)
600 Pieces (MOQ)
Detailed Photos
Product Description
NCE provides N-channel SGT-I series power MOSFETs with breakdown voltage levels ranging from 30V to 250V. NCE's technology and excellent quality management ensure excellent product performance and reliability, and provide cost-effective solutions while reducing
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- ISO 9001, ISO 14001
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210A 60V N-Channel Enhancement Mode Power Mosfet Dhe027n06 to-263
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DH027N06/DHI027N06/DHE027N06/DH027N06D/DH027N06B
DHF027N06
Drian-to-Source Voltage
VDSS
60
V
Gate-to-Source Voltage
VGSS
±25
V
Drain Current(continuous)
ID(T=25ºC)
210
A
(T=100ºC)
413
A
Drain Current(Pulsed)
IDM
840
A
Single Pulse
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N-Type Semiconductor · Element Semiconductor · SMD
30V 5.8A Nce3404y Nce N-Channel Enhancement Mode Power Transistor Mosfet
US$ 0.028-0.0322
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
Detailed Photos
Product Description
NCE provides N-type 12V~200V and P-type 12V~150V Trench power MOSFETs, adopting advanced process manufacturing technology, better process conditions, and finely optimized device structure to continuously optimize on-resistance, switching characteristics, reliabi
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4A 600V N-Channel Enhancement Mode Power Mosfet D4n60 to-252
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
4N60/I4N60/E4N60/B4N60/D4N60
F4N60
Drian-Source Voltage
VDS
600
V
Gate-Drain Voltage
VGS
±30
V
Drain Current(continuous)
ID(T=25ºC)
4
A
(T=100ºC)
2.5
A
Drain Current(Pulsed)
IDM
16
A
Single Pulse Avalanche Energy
EAS
250
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- Jiangsu, China
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150A 80V N-Channel Enhancement Mode Power Mosfet E150n08 to-263
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
150N08/I150N08/E150N08
F150N08
Maximum Drian-Source DC Voltage
VDS
80
V
Maximum Gate-Drain Voltage
VGS
±25
V
Drain Current(continuous)
ID(T=25ºC)
150
A
(T=100ºC)
114
A
Drain Current(Pulsed)
IDM
650
A
Single Pulse Avalanche Energy
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- Jiangsu, China
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20A 500V N-Channel Enhancement Mode Power Mosfet 20n50b to-247
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
20N50/I20N50/E20N50/20N50B
F20N50
Maximum Drian-Source DC Voltage
VDS
500
V
Maximum Gate-Drain Voltage
VGS
±30
V
Drain Current(continuous)
ID(T=25ºC)
20
A
(T=100ºC)
12.5
A
Drain Current(Pulsed)
IDM
80
A
Single Pulse Avalanche E
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- Jiangsu, China
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