SMD · 2023+ · Element Semiconductor
Nce60p10K Nce P-Channel Enhancement Mode Power Transistor Mosfet with to-252 for Use as a Load Switch or in PWM Applications.
US$ 0.096-0.12
/ Piece
2500 Pieces (MOQ)
2500 Pieces (MOQ)
Detailed Photos
Product Description
NCE provides N-type 12V~200V and P-type 12V~150V Trench power MOSFETs, adopting advanced process manufacturing technology, better process conditions, and finely optimized device structure to continuously optimize on-resistance, switching characteristics, reli
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SMD · 2023+ · Element Semiconductor
-60V -45A Transistor Nce60p45ak Nce P-Channel Enhancement Mode Power Mosfet
US$ 0.1-1.2
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
Detailed Photos
Product Description
NCE provides N-type 12V~200V and P-type 12V~150V Trench power MOSFETs, adopting advanced process manufacturing technology, better process conditions, and finely optimized device structure to continuously optimize on-resistance, switching characteristics, r
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RoHS · P-Type Semiconductor · Discrete Device
12V -9A Nce12p09s Nce P-Channel Enhancement Mode Power Mosfet
US$ 0.001-0.109
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
Detailed Photos
Product Description
NCE provides N-type 12V~200V and P-type 12V~150V Trench power MOSFETs, adopting advanced process manufacturing technology, better process conditions, and finely optimized device structure to continuously optimize on-resistance, switching characteristics
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SMD · 2023+ · Element Semiconductor
60V 82A Nce60p82ak Nce P-Channel Enhancement Mode Power Mosfet
US$ 0.204-0.285
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
Detailed Photos
Product Description
NCE provides N-type 12V~200V and P-type 12V~150V Trench power MOSFETs, adopting advanced process manufacturing technology, better process conditions, and finely optimized device structure to continuously optimize on-resistance, switching characteristics, r
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RoHS · Discrete Device · SMD
-60V -3A Nce60p03y Nce P-Channel Enhancement Mode Power Mosfet
US$ 0.001-0.056
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
Detailed Photos
Product Description
NCE provides N-type 12V~200V and P-type 12V~150V Trench power MOSFETs, adopting advanced process manufacturing technology, better process conditions, and finely optimized device structure to continuously optimize on-resistance, switching characteristics, r
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SMD · 2023+ · Element Semiconductor
30V 5.8A IC Electronic Componets Nce3400ay Sot23 Nce N-Channel Enhancement Mode Power Mosfet моп-транзистор
US$ 0.026-0.0299
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
Detailed Photos
Product Description
NCE provides N-type 12V~200V and P-type 12V~150V Trench power MOSFETs, adopting advanced process manufacturing technology, better process conditions, and finely optimized device structure to continuously optimize on-resistance, switching characteristics, r
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SMD · 2023+ · Element Semiconductor
Nce60p04y Nce P-Channel Enhancement Mode Power Mosfet
US$ 0.043-0.056
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
Detailed Photos
Product Description
NCE provides N-type 12V~200V and P-type 12V~150V Trench power MOSFETs, adopting advanced process manufacturing technology, better process conditions, and finely optimized device structure to continuously optimize on-resistance, switching characteristics, r
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- ISO 9001, ISO 14001
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Discrete Device · P-Type Semiconductor
80A 40V N-Channel Enhancement Mode Power Mosfet Dh065n04D to-252b
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
DH065N04D
UNIT
Drian-to-Source Voltage
VDSS
40
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
80
A
(T=100ºC)
56
A
Drain Current(Pulsed)
IDM
320
A
Single Pulse Avalanche Energy
EAS
225
mJ
Total Dissipation
- Jiangsu Donghai Semiconductor Co.,Ltd
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- Jiangsu, China
- ISO 9001, ISO 14001, IATF16949
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Discrete Device · P-Type Semiconductor
100A 85V N-Channel Enhancement Mode Power Mosfet Dh85n08 to-220c
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DH85N08/ DHE85N08
DHF85N08F
Drian-to-Source Voltage
VDSS
85
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
100
A
(T=100ºC)
72
A
Drain Current(Pulsed)
IDM
380
A
Single Pulse Avalanche Energy
EAS
750
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- Jiangsu, China
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P-Type Semiconductor · Discrete Device · RoHS
Hot Sale 81A 30V N-Channel Enhancement Mode Power Mosfet Dhp90n03 Dfn5*6
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DHP90N03
Drian-to-Source Voltage
VDSS
30
V
Gate-to-Drian Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
81
A
(T=100ºC)
57
A
Drain Current(Pulsed)
IDM
324
A
Single Pulse Avalanche Energy
EAS
145
mJ
Total Dissipation
Ta
- Jiangsu Donghai Semiconductor Co.,Ltd
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- Jiangsu, China
- ISO 9001, ISO 14001, IATF16949
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-
What are the common applications of P-Channel MOSFET?
P-Channel MOSFET is commonly used in electronic components like diodes, transistors, and integrated circuits. They play a crucial role in controlling the flow of electricity and determining the behavior of semiconductor devices.
-
How can I identify a reliable supplier for P-Channel MOSFET in China?
Identifying a reputable supplier in China involves thorough research, checking certifications, customer feedback, and product quality assessments. Contacting multiple suppliers, requesting samples, and visiting their production facilities can help assess their credibility.
-
What benefits do manufacturers get from sourcing P-Channel MOSFETs wholesale?
Manufacturers sourcing P-Channel MOSFETs wholesale can benefit from cost savings, bulk purchasing power, consistent quality, and improved production efficiency. Working with a trusted supplier enhances collaboration, secures a stable supply chain and quality assurance.
Discrete Device · P-Type Semiconductor
50A 30V N-Channel Enhancement Mode Power Mosfet Dhb50n03 to-251b
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
Drian-to-Source Voltage
VDSS
30
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
50
A
(T=100ºC)
35
A
Drain Current(Pulsed)
IDM
140
A
Single Pulse Avalanche Energy
EAS
140
mJ
Total Dissipation
Ta=25º
- Jiangsu Donghai Semiconductor Co.,Ltd
-
Suppliers with verified business licenses
- Jiangsu, China
- ISO 9001, ISO 14001, IATF16949
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Discrete Device · P-Type Semiconductor
20A 100V P-Channel Enhancement Mode Power Mosfet Dh100p20e to-263
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DH100P20/DH100P20I/DH100P20E/DH100P20B/DH100P20D
DH100P20F
Drian-to-Source Voltage
VDSS
-100
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
-20
A
(T=100ºC)
-14
A
Drain Current(Pulsed)
IDM
-80
A
Single Pul
- Jiangsu Donghai Semiconductor Co.,Ltd
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Suppliers with verified business licenses
- Jiangsu, China
- ISO 9001, ISO 14001, IATF16949
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Discrete Device · P-Type Semiconductor
10A 60V P-Channel Enhancement Mode Power Mosfet Dh9z24 to-220
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DH9Z24DHI9Z24IDHE9Z24/DHB9Z24/DHD9Z24
DHF9Z24
Drian-to-Source Voltage
VDSS
-60
V
Gate-to-Drain Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
-10
A
(T=100ºC)
-6.5
A
Drain Current(Pulsed)
IDM
-40
A
Single Pulse Avalanch
- Jiangsu Donghai Semiconductor Co.,Ltd
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Suppliers with verified business licenses
- Jiangsu, China
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2023+ · Discrete Device · SMD
-55V -15A Nce55p15K Nce P-Channel Enhancement Mode Power Mosfet
US$ 0.001-0.1
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
Detailed Photos
Product Description
NCE provides N-type 12V~200V and P-type 12V~150V Trench power MOSFETs, adopting advanced process manufacturing technology, better process conditions, and finely optimized device structure to continuously optimize on-resistance, switching characteristics, r
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- Guangdong, China
- ISO 9001, ISO 14001
- Contact Now
Discrete Device · P-Type Semiconductor
40A 100V P-Channel Enhancement Mode Power Mosfet Dh100p40 to-220
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DH100P40/DH100P40I/DH100P40E
DH100P40F
Drian-to-Source Voltage
VDSS
-100
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
-40
A
(T=100ºC)
-28
A
Drain Current(Pulsed)
IDM
-160
A
Single Pulse Avalanche Energy
- Jiangsu Donghai Semiconductor Co.,Ltd
-
Suppliers with verified business licenses
- Jiangsu, China
- ISO 9001, ISO 14001, IATF16949
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SMD · 2023+ · Element Semiconductor
-20V -45A Nce20p45q Nce P-Channel Enhancement Mode Power Mosfet
US$ 0.122-0.2
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
Detailed Photos
Product Description
NCE provides N-type 12V~200V and P-type 12V~150V Trench power MOSFETs, adopting advanced process manufacturing technology, better process conditions, and finely optimized device structure to continuously optimize on-resistance, switching characteristics, reliabi
- SHENZHEN HEYLOO ELECTRONIC TECHNOLOGY ...
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Suppliers with verified business licenses
- Guangdong, China
- ISO 9001, ISO 14001
- Contact Now
Discrete Device · P-Type Semiconductor
145A 30V N-Channel Enhancement Mode Power Mosfet Dh028n03D to-252b
US$ 0.45
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DH028N0
3F
DH028N03 /DH028N03E
DH028N03B/DH028N03D
Drian-to-Source Voltage
VDSS
30
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
145
A
(T=100ºC)
102
A
Drain Current(Pulsed)
IDM
580
A
Single Pulse Ava
- Jiangsu Donghai Semiconductor Co.,Ltd
-
Suppliers with verified business licenses
- Jiangsu, China
- ISO 9001, ISO 14001, IATF16949
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Discrete Device · P-Type Semiconductor
8A 500V N-Channel Enhancement Mode Power Mosfet 8n50 to-220c
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
8N50
Drian-to-Source Voltage
VDSS
500
V
Gate-to-Source Voltage
VGSS
±30
V
Drain Current(continuous)
ID(T=25ºC)
8
A
(T=100ºC)
5
A
Drain Current(Pulsed)
IDM
32
A
Single Pulse Avalanche Energy
EAS
450
mJ
Total Dissipation
Ta=25&o
- Jiangsu Donghai Semiconductor Co.,Ltd
-
Suppliers with verified business licenses
- Jiangsu, China
- ISO 9001, ISO 14001, IATF16949
- Contact Now
RoHS · P-Type Semiconductor · Discrete Device
-100V -18A Nce01p18d Nce P-Channel Enhancement Mode Power Mosfet with to-263
US$ 0.33-0.5
/ Piece
800 Pieces (MOQ)
800 Pieces (MOQ)
Detailed Photos
Product Description
NCE provides N-type 12V~200V and P-type 12V~150V Trench power MOSFETs, adopting advanced process manufacturing technology, better process conditions, and finely optimized device structure to continuously optimize on-resistance, switching characteristics, r
- SHENZHEN HEYLOO ELECTRONIC TECHNOLOGY ...
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Suppliers with verified business licenses
- Guangdong, China
- ISO 9001, ISO 14001
- Contact Now
Discrete Device · P-Type Semiconductor
85A 30V P-Channel Enhancement Mode Power Mosfet DHD85p03 to-252
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DH85P03/DHI85P03/DHE85P03/DHB85P03/DHD85P03
DHF85P03
Drian-to-Source Voltage
VDSS
-30
V
Gate-to-Source Voltage
VGSS
±25
V
Drain Current(continuous)
ID(T=25ºC)
-80
A
(T=100ºC)
-60
A
Drain Current(Pulsed)
IDM
-200
A
Single Pulse Ava
- Jiangsu Donghai Semiconductor Co.,Ltd
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Suppliers with verified business licenses
- Jiangsu, China
- ISO 9001, ISO 14001, IATF16949
- Contact Now
SMD · 2023+ · Element Semiconductor
Nce60p04sn Nce P-Channel Enhancement Mode Power Mosfet
US$ 0.0867-0.12
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
Detailed Photos
Product Description
NCE provides N-type 12V~200V and P-type 12V~150V Trench power MOSFETs, adopting advanced process manufacturing technology, better process conditions, and finely optimized device structure to continuously optimize on-resistance, switching characteristics, r
- SHENZHEN HEYLOO ELECTRONIC TECHNOLOGY ...
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Suppliers with verified business licenses
- Guangdong, China
- ISO 9001, ISO 14001
- Contact Now
Discrete Device · P-Type Semiconductor
8A 500V N-Channel Enhancement Mode Power Mosfet F8n50 to-220f
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
F8N50
Drian-to-Source Voltage
VDSS
500
V
Gate-to-Source Voltage
VGSS
±30
V
Drain Current(continuous)
ID(T=25ºC)
8
A
(T=100ºC)
5
A
Drain Current(Pulsed)
IDM
32
A
Single Pulse Avalanche Energy
EAS
440
mJ
Total Dissipation
Ta=25
- Jiangsu Donghai Semiconductor Co.,Ltd
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Suppliers with verified business licenses
- Jiangsu, China
- ISO 9001, ISO 14001, IATF16949
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Discrete Device · P-Type Semiconductor
Dh3205p to-220c 110A 55V Mosfets P-Channel Enhancement Mode Power Mosfet
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
SYMBOL
VALUE
UNIT
Min
Typ.
Max
BVDSS
55
-
62
V
ID (T=25ºC)
-
-
110
A
BVGSS
±20
V
VTH
2
4
V
EAS
-
-
1440
mJ
Ptot
-
-
200
W
Rdson
6.8
-
8.0
mΩ
Features
Fast Switching
High avalanche Current
Low ON Resistance
Low Gate Charge
Low R
- Jiangsu Donghai Semiconductor Co.,Ltd
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- Jiangsu, China
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SMD · 2023+ · Element Semiconductor
Ready Stock Nce3401 Nce P-Channel Enhancement Mode Power Transistor Mosfet with Sot-23 for Use as a Load Switch or in PWM Applications
US$ 0.024-0.028
/ Piece
3000 Pieces (MOQ)
3000 Pieces (MOQ)
Detailed Photos
Product Description
NCE provides N-type 12V~200V and P-type 12V~150V Trench power MOSFETs, adopting advanced process manufacturing technology, better process conditions, and finely optimized device structure to continuously optimize on-resistance, switching characteristics, r
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- Guangdong, China
- ISO 9001, ISO 14001
- Contact Now
RoHS · P-Type Semiconductor · Discrete Device
-20V -4.1A Nce2305 Nce P-Channel Enhancement Mode Power Mosfet
US$ 0.024-0.028
/ Piece
3000 Pieces (MOQ)
3000 Pieces (MOQ)
Detailed Photos
Product Description
NCE provides N-type 12V~200V and P-type 12V~150V Trench power MOSFETs, adopting advanced process manufacturing technology, better process conditions, and finely optimized device structure to continuously optimize on-resistance, switching characteristics, r
- SHENZHEN HEYLOO ELECTRONIC TECHNOLOGY ...
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Suppliers with verified business licenses
- Guangdong, China
- ISO 9001, ISO 14001
- Contact Now
Discrete Device · P-Type Semiconductor
256A 30V N-Channel Enhancement Mode Power Mosfet Dh012n03p Dfn5*6-8
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DH012N03P
Drian-to-Source Voltage
VDSS
30
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
256
A
(T=100ºC)
181
A
Drain Current(Pulsed)
IDM
1024
A
Single Pulse Avalanche Energy
EAS
870
mJ
Total Dissipa
- Jiangsu Donghai Semiconductor Co.,Ltd
-
Suppliers with verified business licenses
- Jiangsu, China
- ISO 9001, ISO 14001, IATF16949
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SMD · P-Type Semiconductor · Discrete Device
-100V -18A Nce01p18K Nce P-Channel Enhancement Mode Power Mosfet
US$ 0.136-0.156
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
Detailed Photos
Product Description
NCE provides N-type 12V~200V and P-type 12V~150V Trench power MOSFETs, adopting advanced process manufacturing technology, better process conditions, and finely optimized device structure to continuously optimize on-resistance, switching characteristics, r
- SHENZHEN HEYLOO ELECTRONIC TECHNOLOGY ...
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Suppliers with verified business licenses
- Guangdong, China
- ISO 9001, ISO 14001
- Contact Now
Discrete Device · P-Type Semiconductor
80A 100V P-Channel Enhancement Mode Power Mosfet Dh100p70 to-220
US$ 0.01-0.2
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DH100P70/DH100P70I/DH100P70E
DH100P70F
Drian-to-Source Voltage
VDSS
-100
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
-80
A
(T=100ºC)
-50
A
Drain Current(Pulsed)
IDM
-200
A
Single Pulse Avalanche Energy
- Jiangsu Donghai Semiconductor Co.,Ltd
-
Suppliers with verified business licenses
- Jiangsu, China
- ISO 9001, ISO 14001, IATF16949
- Contact Now
Discrete Device · P-Type Semiconductor
160A 30V N-Channel Enhancement Mode Power Mosfet Dh020n03p Dfn5*6-8
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DH020N03P
Drian-to-Source Voltage
VDSS
30
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
160
A
(T=100ºC)
112
A
Drain Current(Pulsed)
IDM
630
A
Single Pulse Avalanche Energy
EAS
440
mJ
Total Dissipat
- Jiangsu Donghai Semiconductor Co.,Ltd
-
Suppliers with verified business licenses
- Jiangsu, China
- ISO 9001, ISO 14001, IATF16949
- Contact Now
SMD · 2023+ · Element Semiconductor
30V 5.8A Nce3400 Nce N-Channel Enhancement Mode Power Mosfet
US$ 0.024-0.0276
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
Detailed Photos
Product Description
NCE provides N-type 12V~200V and P-type 12V~150V Trench power MOSFETs, adopting advanced process manufacturing technology, better process conditions, and finely optimized device structure to continuously optimize on-resistance, switching characteristics, r
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Suppliers with verified business licenses
- Guangdong, China
- ISO 9001, ISO 14001
- Contact Now
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