Discrete Device · P-Type Semiconductor
40A 60V P-Channel Enhancement Mode Power Mosfet Dh400p06 to-220c
US$ 0.45
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DH400P
06F
DH400P06/DH400P06E/
DH400P06B/DH400P06D
Drian-to-Source Voltage
VDSS
-60
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
-40
A
(T=100ºC)
-28
A
Drain Current(Pulsed)
IDM
-160
A
Single Pulse
- Jiangsu Donghai Semiconductor Co.,Ltd
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DIP(Dual In-line Package) · Element Semiconductor · Discrete Device
P Channel Mosfet of Infineon Electronic Components Agent of Irlml9301trpbf Irf7240trpbf Irfb4115pbf Irf4905strlpbf
US$ 0.01-0.05
/ Piece
1000 Pieces (MOQ)
1000 Pieces (MOQ)
Original Electronic component mosfet of infineon
P channel mosfet of infineon electronic components agent of IRLML9301TRPBF IRF7240TRPBF IRFB4115PBF IRF4905STRLPBF
Company introduction:
We are a leading IC Electronic Components Supplier in China, agent of France NICOMATIC, Korea ITF filter, Anal
- Emi International (Hk) Co. Ltd
-
- Guangdong, China
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Discrete Device · P-Type Semiconductor
-60A -60V P-Channel Enhancement Mode Power Mosfet Dh150p06D to-252
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
SYMBOL
VALUE
UNIT
Min
Typ.
Max
BVDSS
-60
-
-70
V
ID (T=25ºC)
-
-
-60
A
BVGSS
±20
V
VTH
-1
-3
V
EAS
-
-
506
mJ
Ptot
-
-
110
W
Rdson
14
-
720
mΩ
Features
Fast Switching
Low ON Resistance
Low Gate Charge
Low Reverse Transfer Capacitan
- Jiangsu Donghai Semiconductor Co.,Ltd
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- Jiangsu, China
- IATF16949
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Discrete Device · P-Type Semiconductor
-85A -60V P-Channel Enhancement Mode Power Mosfet Dtd125p06la to-252
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
Features
High density cell design for ultra low Rdson
175°C operating temperature
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Applications
Load switch
Product Specifications and
- Jiangsu Donghai Semiconductor Co.,Ltd
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Discrete Device · P-Type Semiconductor · RoHS
Hot Sale 20A 100V P-Channel Enhancement Mode Power Mosfet Dh100p20d to-252
US$ 0.154
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DH100P20/DH100P20I/DH100P20E/DH100P20B/DH100P20D
DH100P20F
Drian-to-Source Voltage
VDSS
-100
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
-20
A
(T=100ºC)
-14
A
Drain Current(Pulsed)
IDM
-80
A
Single Pul
- Jiangsu Donghai Semiconductor Co.,Ltd
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Discrete Device · P-Type Semiconductor
85A 30V P-Channel Enhancement Mode Power Mosfet DHD85p03 to-252
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DH85P03/DHI85P03/DHE85P03/DHB85P03/DHD85P03
DHF85P03
Drian-to-Source Voltage
VDSS
-30
V
Gate-to-Source Voltage
VGSS
±25
V
Drain Current(continuous)
ID(T=25ºC)
-80
A
(T=100ºC)
-60
A
Drain Current(Pulsed)
IDM
-200
A
Single Pulse Ava
- Jiangsu Donghai Semiconductor Co.,Ltd
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Discrete Device · P-Type Semiconductor
30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p28 to-220c
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DHS045N88
/DHS045N88E
/DHS045N88B/ DHS045N88D
DHS045N
88F
Drian-to-Source Voltage
VDSS
85
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
120
A
(T=100ºC)
84
A
Drain Current(Pulsed)
IDM
480
A
Singl
- Jiangsu Donghai Semiconductor Co.,Ltd
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Discrete Device · P-Type Semiconductor
-60A -60V P-Channel Enhancement Mode Power Mosfet Dh150p06f to-220f
US$ 0.01-0.2
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
SYMBOL
VALUE
UNIT
Min
Typ.
Max
BVDSS
-60
-
-70
V
ID (T=25ºC)
-
-
-60
A
BVGSS
±20
V
VTH
-1
-3
V
EAS
-
-
506
mJ
Ptot
-
-
30
W
Rdson
14
-
720
mΩ
Features
Fast Switching
Low ON Resistance
Low Gate Charge
Low Reverse Transfer Capacitanc
- Jiangsu Donghai Semiconductor Co.,Ltd
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- Jiangsu, China
- IATF16949
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Discrete Device · P-Type Semiconductor
40A 100V P-Channel Enhancement Mode Power Mosfet Dh100p40 to-220
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DH100P40/DH100P40I/DH100P40E
DH100P40F
Drian-to-Source Voltage
VDSS
-100
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
-40
A
(T=100ºC)
-28
A
Drain Current(Pulsed)
IDM
-160
A
Single Pulse Avalanche Energy
- Jiangsu Donghai Semiconductor Co.,Ltd
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- Jiangsu, China
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Discrete Device · P-Type Semiconductor
Dh3205p to-220c 110A 55V Mosfets P-Channel Enhancement Mode Power Mosfet
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
SYMBOL
VALUE
UNIT
Min
Typ.
Max
BVDSS
55
-
62
V
ID (T=25ºC)
-
-
110
A
BVGSS
±20
V
VTH
2
4
V
EAS
-
-
1440
mJ
Ptot
-
-
200
W
Rdson
6.8
-
8.0
mΩ
Features
Fast Switching
High avalanche Current
Low ON Resistance
Low Gate Charge
Low R
- Jiangsu Donghai Semiconductor Co.,Ltd
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- Jiangsu, China
- IATF16949
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-
What are the common applications of P-Channel MOSFET?
P-Channel MOSFET is commonly used in electronic components like diodes, transistors, and integrated circuits. They play a crucial role in controlling the flow of electricity and determining the behavior of semiconductor devices.
-
How can I identify a reliable supplier for P-Channel MOSFET in China?
Identifying a reputable supplier in China involves thorough research, checking certifications, customer feedback, and product quality assessments. Contacting multiple suppliers, requesting samples, and visiting their production facilities can help assess their credibility.
-
What benefits do manufacturers get from sourcing P-Channel MOSFETs wholesale?
Manufacturers sourcing P-Channel MOSFETs wholesale can benefit from cost savings, bulk purchasing power, consistent quality, and improved production efficiency. Working with a trusted supplier enhances collaboration, secures a stable supply chain and quality assurance.
Discrete Device · P-Type Semiconductor
10A 60V P-Channel Enhancement Mode Power Mosfet Dh9z24 to-220
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DH9Z24DHI9Z24IDHE9Z24/DHB9Z24/DHD9Z24
DHF9Z24
Drian-to-Source Voltage
VDSS
-60
V
Gate-to-Drain Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
-10
A
(T=100ºC)
-6.5
A
Drain Current(Pulsed)
IDM
-40
A
Single Pulse Avalanch
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
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Discrete Device · P-Type Semiconductor
18A 100V P-Channel Enhancement Mode Power Mosfet Dh100p18b to-251b
US$ 0.45
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DH100P18/DH100P18I/DH100P18E/DH100P18B/DH100P18D
DH100P18F
Drian-to-Source Voltage
VDSS
-100
V
Gate-to-Source Voltage
VGSS
±30
V
Drain Current(continuous)
ID(T=25ºC)
-18
A
(T=100ºC)
-10.5
A
Drain Current(Pulsed)
IDM
-54
A
Single P
- Jiangsu Donghai Semiconductor Co.,Ltd
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- Jiangsu, China
- IATF16949
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Discrete Device · P-Type Semiconductor
54A 30V P-Channel Enhancement Mode Power Mosfet Dh130p03D to-252
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DH130P03D
Drian-to-Source Voltage
VDSS
-30
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
-54
A
(T=100ºC)
-38
A
Drain Current(Pulsed)
IDM
-216
A
Single Pulse Avalanche Energy
EAS
145
mJ
Total Dissipati
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
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Discrete Device · P-Type Semiconductor
30A 60V P-Channel Enhancement Mode Power Mosfet Dh300p06D to-252
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DH300P06/DH300P06I/DH300P06E/DH300P06B/DH300P06D
DH300P06F
Drian-to-Source Voltage
VDSS
-60
V
Gate-to-Drain Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
-30
A
(T=100ºC)
-21
A
Drain Current(Pulsed)
IDM
-120
A
Single Puls
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
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Discrete Device · P-Type Semiconductor
20A 100V P-Channel Enhancement Mode Power Mosfet Dh100p20b to-251
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DH100P20/DH100P20I/DH100P20E/DH100P20B/DH100P20D
DH100P20F
Drian-to-Source Voltage
VDSS
-100
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
-20
A
(T=100ºC)
-14
A
Drain Current(Pulsed)
IDM
-80
A
Single Pul
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
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Discrete Device · P-Type Semiconductor
80A 100V P-Channel Enhancement Mode Power Mosfet Dh100p70 to-220
US$ 0.01-0.2
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DH100P70/DH100P70I/DH100P70E
DH100P70F
Drian-to-Source Voltage
VDSS
-100
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
-80
A
(T=100ºC)
-50
A
Drain Current(Pulsed)
IDM
-200
A
Single Pulse Avalanche Energy
- Jiangsu Donghai Semiconductor Co.,Ltd
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- Jiangsu, China
- IATF16949
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Discrete Device · P-Type Semiconductor
20A 100V P-Channel Enhancement Mode Power Mosfet Dh100p20e to-263
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DH100P20/DH100P20I/DH100P20E/DH100P20B/DH100P20D
DH100P20F
Drian-to-Source Voltage
VDSS
-100
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
-20
A
(T=100ºC)
-14
A
Drain Current(Pulsed)
IDM
-80
A
Single Pul
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
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Discrete Device · P-Type Semiconductor
140A 30V P-Channel Enhancement Mode Power Mosfet Dh060p03D to-252b
US$ 0.45
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DH060P
03F
DH060P03/DH060P03E/
DH060P03B/DH060P03D
Drian-to-Source Voltage
VDSS
-30
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
-140
A
(T=100ºC)
-98
A
Drain Current(Pulsed)
IDM
-560
A
Single Puls
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
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Discrete Device · P-Type Semiconductor
-30A -60V P-Channel Enhancement Mode Power Mosfet Dh400p06ld to-252b
US$ 0.45
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
Drian-to-Source Voltage
VDSS
-60
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
-30
A
(T=100ºC)
-21
A
Drain Current(Pulsed)
IDM
-120
A
Single Pulse Avalanche Energy
EAS
256
mJ
Total Dissipation
Ta=25&o
- Jiangsu Donghai Semiconductor Co.,Ltd
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- Jiangsu, China
- IATF16949
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Discrete Device · P-Type Semiconductor · RoHS
Hot Sale -100V/33mΩ /-35A P-Channel Enhancement Mode Power Mosfet Dh100p30d to-252b
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DH100P30D
Drian-to-Source Voltage
VDSS
-100
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
-35
A
(T=100ºC)
-22
A
Drain Current(Pulsed)
IDM
-140
A
Single Pulse Avalanche Energy
EAS
400
mJ
Total Dissipat
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
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Discrete Device · P-Type Semiconductor
30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30 to-220c
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DH100P30/DH100P30I/DH100P30E/DH100P30B/DH100P30D
DH100P30F
Drian-to-Source Voltage
VDSS
-100
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
-30
A
(T=100ºC)
-21
A
Drain Current(Pulsed)
IDM
-120
A
Single Pu
- Jiangsu Donghai Semiconductor Co.,Ltd
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- Jiangsu, China
- IATF16949
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Discrete Device · P-Type Semiconductor · RoHS
Hot Sale 18A 100V P-Channel Enhancement Mode Power Mosfet Dh100p18d to-252
US$ 0.01-0.12
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DH100P18/DH100P18I/DH100P18E/DH100P18B/DH100P18D
DH100P18F
Drian-to-Source Voltage
VDSS
-100
V
Gate-to-Source Voltage
VGSS
±30
V
Drain Current(continuous)
ID(T=25ºC)
-18
A
(T=100ºC)
-10.5
A
Drain Current(Pulsed)
IDM
-54
A
Single P
- Jiangsu Donghai Semiconductor Co.,Ltd
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- Jiangsu, China
- IATF16949
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Discrete Device · P-Type Semiconductor
-50A -40V P-Channel Enhancement Mode Power Mosfet Dh160p04D to-252b
US$ 0.45
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
Drian-to-Source Voltage
VDSS
-40
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
-50
A
(T=100ºC)
-35
A
Drain Current(Pulsed)
IDM
-155
A
Single Pulse Avalanche Energy
EAS
289
mJ
Total Dissipation
Ta=25&o
- Jiangsu Donghai Semiconductor Co.,Ltd
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- Jiangsu, China
- IATF16949
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Discrete Device · P-Type Semiconductor
-140A -60V P-Channel Enhancement Mode Power Mosfet DTG050p06la to-220c
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
SYMBOL
VALUE
UNIT
Min
Typ.
Max
BVDSS
-60
-
-70
V
ID (T=25ºC)
-
-
-140
A
BVGSS
±20
V
VTH
-1
-3
V
EAS
-
-
1369
mJ
Ptot
-
-
2.5
W
Rdson
14
-
5.8
mΩ
Features
Fast Switching
Low ON Resistance
Low Gate Charge
Low Reverse Transfer Capacit
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Discrete Device · P-Type Semiconductor
75A 100V P-Channel Enhancement Mode Power Mosfet Dh100p70e to-263
US$ 0.01-0.2
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DH100P70E
Drian-to-Source Voltage
VDSS
-100
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
-75
A
(T=100ºC)
-52
A
Drain Current(Pulsed)
IDM
-240
A
Single Pulse Avalanche Energy
EAS
729
mJ
Total Dissipat
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Discrete Device · P-Type Semiconductor
12A 100V N-Channel Enhancement Mode Power Mosfet Dh850n10b to-251b
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
Drian-to-Source Voltage
VDSS
100
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
12
A
(T=100ºC)
8
A
Drain Current(Pulsed)
IDM
48
A
Single Pulse Avalanche Energy
EAS
42
mJ
Total Dissipation
Ta=25&o
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
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Discrete Device · P-Type Semiconductor
120A100V N-Channel Enhancement Mode Power Mosfet D120n10 to-220c
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
D120N10ZR/ ED120N10ZR
FD120N10
ZR
Drian-to-Source Voltage
VDSS
100
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
120
A
(T=100ºC)
86
A
Drain Current(Pulsed)
IDM
480
A
Single Pulse Avalanche Energy
- Jiangsu Donghai Semiconductor Co.,Ltd
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- Jiangsu, China
- IATF16949
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Digital · Element Semiconductor · Discrete Device
New and Original P Channel Mosfet of Onsemi Ntzd3155CT1g Ntms5p02r2g
US$ 0.05-0.2
/ Piece
1000 Pieces (MOQ)
1000 Pieces (MOQ)
New and original P channel mosfet of Onsemi NTZD3155CT1G NTMS5P02R2G
Product description:
Brand
Onsemi
Name
Mosfet
Package
Reel/ Tape
HS
8542.39.0001
Company introduction:
We are a leading IC Electronic Components Supplier in China, agent of France NICOMATIC, Korea ITF filter, Anal
- Emi International (Hk) Co. Ltd
-
- Guangdong, China
- Contact Now
Discrete Device · P-Type Semiconductor
256A 30V N-Channel Enhancement Mode Power Mosfet Dh012n03p Dfn5*6-8
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DH012N03P
Drian-to-Source Voltage
VDSS
30
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
256
A
(T=100ºC)
181
A
Drain Current(Pulsed)
IDM
1024
A
Single Pulse Avalanche Energy
EAS
870
mJ
Total Dissipa
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
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Discrete Device · P-Type Semiconductor
160A 30V N-Channel Enhancement Mode Power Mosfet Dh020n03p Dfn5*6-8
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
DH020N03P
Drian-to-Source Voltage
VDSS
30
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current(continuous)
ID(T=25ºC)
160
A
(T=100ºC)
112
A
Drain Current(Pulsed)
IDM
630
A
Single Pulse Avalanche Energy
EAS
440
mJ
Total Dissipat
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
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