Radio · Discrete Device · SMD
Advance High Performance GaN RF Power Transistor for Base Stations and Multi Carrier Applications
US$ 1
/ Piece
100 Pieces (MOQ)
100 Pieces (MOQ)
Product Description 1. Product Introduction The HM1G3600-450N is a 450W RF GaN HEMT Transistor with first generation RF GaN technology from Eversmart, which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800 MHz. 2. Features and benefits 1) High efficiency, high gai
Radio · Discrete Device · SMD
High Performance 3300MHz-3800MHz RF Power GaN Transistor for Base Stations and Multi Carrier Applications
US$ 1
/ Piece
100 Pieces (MOQ)
100 Pieces (MOQ)
Product Description 1. Product Introduction The HM1G3600-450N is a 450W RF GaN HEMT Transistor with first generation RF GaN technology from Eversmart, which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800 MHz. 2. Features and benefits 1) High efficiency, high gai
Radio · Discrete Device · SMD
Advance 2000MHz-4000MHz RF Power GaN Transistor for RF/Microwave Systems and Base Station Application
US$ 1
/ Piece
100 Pieces (MOQ)
100 Pieces (MOQ)
Product Description 1. Product Introduction The HEF2H2040 - 370EF is a pre - matched broadband power transistor. It is a GaN device fabricated based on fully domestic materials and processes. The available operating frequency range is 2.0 - 4.0 GHz. It can work well at high temperature and has very
Discrete Device · N-Type Semiconductor
Insulated Gate Bipolar Transistor IGBT G15n120d to-247
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
1200
V
Gate- Emitter Voltage
VGES
±20
V
Collector Current
IC(T=25ºC)
30
A
Collector Current
(Tc=100ºC)
15
A
Pulsed Collector Current
ICM
45
A
Diode Continuous Forward Current
IF @TC = 100 °C
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
Insulated Gate Bipolar Transistor IGBT G30n60d to-247
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
600
V
Gate- Emitter Voltage
VGES
±20
V
Collector Current
IC(T=25ºC)
60
A
Collector Current
(Tc=100ºC)
30
A
Pulsed Collector Current
ICM
90
A
Diode Continuous Forward Current
IF @TC = 100 °C
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Manufacturer 4A 600V SVF4N60 plastic seal N-channel Transistor ST MCU
US$ 0.05-0.15
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
Why choose us?
* Specilaze in IC for around 14 years
* 100% Tested before sale
* Cooperate with over 35 famous brands from domestic and international market
* Competitive and reasonable price
* Abundant inventory and short lead time about 3-7 days
* 1 Year warranty
* 24hrs supports from o
- CTC Technology Co., Ltd.
-
5(5.0)
"Fast Dispatch"Fast Dispatch - Guangdong, China
- Contact Now
Power Electronic Components · CE · N-Type Semiconductor
Durable Powerpassion Diode Rectifier Mosfet Transistor for Electronics
US$ 0.01-0.45
/ Piece
1 Piece (MOQ)
1 Piece (MOQ)
Product Description
Product Features
Experience the sophisticated design of our Single Mesa Structure, ingeniously crafted to enhance performance and reliability.
Utilizing advanced Table Glass Passivation Process, this product ensures superior protection and longevity.
Enjoy exceptional Voltag
- Zhenjiang Zhendi Electric Technology Co., Ltd
-
- Jiangsu, China
- Contact Now
Discrete Device · N-Type Semiconductor
75A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dgc75f65m to-247
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
650
V
Gate- Emitter Voltage
VGES
±30
V
Collector Current
IC(T=25ºC)
150
A
Collector Current
(Tc=100ºC)
75
A
Pulsed Collector Current
ICM
225
A
Diode Continuous Forward Current
IF @TC = 100 °
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
factory original 2A 650V adaptor mosfet transistor
US$ 0.05-0.15
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
Why choose us?
* Specilaze in electronic components for around 14 years
* 100% Tested before sale
* Cooperate with over 35 famous brands from domestic and international market
* Competitive and reasonable price
* Abundant inventory and short lead time about 3-7 days
* 1 Year warranty
* 24
- CTC Technology Co., Ltd.
-
5(5.0)
"Fast Delivery"Fast Delivery - Guangdong, China
- Contact Now
Discrete Device · N-Type Semiconductor
160A 650V Trenchstop Insulated Gate Bipolar Transistor Dgcp160h65L2 to-247plus
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
650
V
Gate- Emitter Voltage
VGES
±30
V
Collector Current
IC(T=25ºC)
240
A
Collector Current
(Tc=100ºC)
160
A
Pulsed Collector Current
ICM
480
A
Diode Continuous Forward Current
IF @TC = 100 °
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
-
What are the common applications of P-Type Transistor?
P-Type Transistor is commonly used in electronic components like diodes, transistors, and integrated circuits. They play a crucial role in controlling the flow of electricity and determining the behavior of semiconductor devices.
-
How can I identify a reliable supplier for P-Type Transistor in China?
Identifying a reputable supplier in China involves thorough research, checking certifications, customer feedback, and product quality assessments. Contacting multiple suppliers, requesting samples, and visiting their production facilities can help assess their credibility.
-
What benefits do manufacturers get from sourcing P-Type Transistors wholesale?
Manufacturers sourcing P-Type Transistors wholesale can benefit from cost savings, bulk purchasing power, consistent quality, and improved production efficiency. Working with a trusted supplier enhances collaboration, secures a stable supply chain and quality assurance.
Discrete Device · N-Type Semiconductor
40A 650V Trenchstop Insulated Gate Bipolar Transistor G40t65lbbn to-3pn
US$ 0.22
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
Maximum Drian-Source DC Voltage
VDS
650
V
Maximum Gate-Drain Voltage
VGS
±20
V
Drain Current(continuous)
ID(T=25ºC)
80
A
(T=100ºC)
40
A
Drain Current(Pulsed)
IDM
120
A
Single Pulse Avalanche Energy
EAS
90
mJ
Total Dissipation
T
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
30A 650V Trenchstop Insulated Gate Bipolar Transistor Dgf30f65m2
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
650
V
Gate- Emitter Voltage
VGES
±30
V
Collector Current
IC(TJ=25ºC)
60
A
Collector Current
(TJ=100ºC)
30
A
Pulsed Collector Current
ICM
180
A
Diode Continuous Forward Current
IF @TJ = 100 °
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
Insulated Gate Bipolar Transistor IGBT G15n60d to-220f
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
600
V
Gate- Emitter Voltage
VGES
±20
V
Collector Current
IC(T=25ºC)
30
A
Collector Current
(Tc=100ºC)
15
A
Pulsed Collector Current
ICM
45
A
Diode Continuous Forward Current
IF @TC = 100 °C
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Discrete Device · Element Semiconductor · N-Type Semiconductor
Durable PC817X1, X2, and X3 Optoisolator Transistor Ics
US$ 0.004-0.01
/ Piece
10000 Pieces (MOQ)
10000 Pieces (MOQ)
Durable PC817X1, X2, and X3 Optoisolator Transistor ICs
Optoisolator Transistor IC of Sharp PC817X2NIP1B PC817X3NIP1B PC817X1NSZ2B
PC817X2NSZ2B PC817X3NSZ2B PC817X1NSZ9F PC817X2NSZ9F PC817X3NSZ9F
Product description:
Brand
Sharp
Name
Optoisolator Transistor IC
Package
SMD4
HS
8542.39.0
- Emi International (Hk) Co. Ltd
-
- Guangdong, China
- Contact Now
Discrete Device · N-Type Semiconductor
40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40f120m2 to-247
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
1200
V
Gate- Emitter Voltage
VGES
±30
V
Collector Current
IC(T=25ºC)
80
A
Collector Current
(Tc=100ºC)
40
A
Pulsed Collector Current
ICM
160
A
Diode Continuous Forward Current
IF @TC = 100 °
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Power Electronic Components · CE · N-Type Semiconductor
Standard Mount Diode Rectifier Mosfet Transistor by Powerpassion
US$ 0.01-0.45
/ Piece
1 Piece (MOQ)
1 Piece (MOQ)
Product Description
Product features: Our advanced technology showcases remarkable features that set the standard in electronic components, ensuring superior performance and durability.
Single mesa structure (Single Mesa): Benefit from enhanced semiconductor performance with our precise Single Mes
- Zhenjiang Zhendi Electric Technology Co., Ltd
-
- Jiangsu, China
- Contact Now
Discrete Device · N-Type Semiconductor
Silicon NPN Triple Diffused Transistor 5200 to-3pl **%off
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
230
V
Collector- Emitter Voltage
VCEO
230
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
Ic
15
A
Base Current
IB
1.5
A
3PN Collector Dissipation
TC=25ºC
PC
120
W
3PL Collector Dissipation
TC=25ºC
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Power Electronic Components · CE · N-Type Semiconductor
BTA16 600bw Mosfet N-Channel Transistor 600V 170A to-220ab Tube List BTA16-600bw
US$ 0.01-0.45
/ Piece
1 Piece (MOQ)
1 Piece (MOQ)
Product Description
Product features
Single mesa structure (Single Mesa),
Table glass passivation process,
Voltage stability
The ability of strong current shock resistance
The applicable model: BTA12
The main purpose
Washing machine, the hair straightened
Solid state relay, AC motor sp
- Zhenjiang Zhendi Electric Technology Co., Ltd
-
- Jiangsu, China
- Contact Now
2A 600V original factory power mosfet transistor
US$ 0.05-0.15
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
Why choose us?
* Specilaze in IC for around 14 years
* 100% Tested before sale
* Cooperate with over 35 famous brands from domestic and international market
* Competitive and reasonable price
* Abundant inventory and short lead time about 3-7 days
* 1 Year warranty
* 24hrs supports from o
Discrete Device · N-Type Semiconductor
40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40h120m2 to-247
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
1200
V
Gate- Emitter Voltage
VGES
±30
V
Collector Current
IC(T=25ºC)
80
A
Collector Current
(Tc=100ºC)
40
A
Pulsed Collector Current
ICM
160
A
Diode Continuous Forward Current
IF @TC = 100 °
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
30A 650V Trenchstop Insulated Gate Bipolar Transistor Dgn30f65m2 to-3pn
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
650
V
Gate- Emitter Voltage
VGES
±30
V
Collector Current
IC(T=25ºC)
60
A
Collector Current
(Tc=100ºC)
30
A
Pulsed Collector Current
ICM
180
A
Diode Continuous Forward Current
IF @TC = 100 °C
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
80A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc80f65m
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
650
V
Gate- Emitter Voltage
VGES
±30
V
Collector Current
IC(T=25ºC)
160
A
Collector Current
(Tc=100ºC)
80
A
Pulsed Collector Current
ICM
240
A
Diode Continuous Forward Current
IF @TC = 100 °
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
60A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg60n65D
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
650
V
Gate- Emitter Voltage
VGES
±20
V
Collector Current
IC(T=25ºC)
120
A
Collector Current
(Tc=100ºC)
60
A
Pulsed Collector Current
ICM
180
A
Diode Continuous Forward Current
IF @TC = 100 °
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Power Electronic Components · CE · N-Type Semiconductor
Standard Mount Diode Rectifier Mosfet Transistor Specifications by Powerpassion
US$ 0.01-0.45
/ Piece
1 Piece (MOQ)
1 Piece (MOQ)
Product Description
Product Features
Boasting a sophisticated single mesa structure (Single Mesa), this diode rectifier ensures optimal performance and reliability.
Featuring a cutting-edge table glass passivation process, our product guarantees enhanced durability and efficiency over time.
Ren
- Zhenjiang Zhendi Electric Technology Co., Ltd
-
- Jiangsu, China
- Contact Now
Insulated Gate Bipolar Transistor IGBT G60n65D to-247 **%off
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
600
V
Gate- Emitter Voltage
VGES
±20
V
Collector Current
IC(T=25ºC)
120
A
Collector Current
(Tc=100ºC)
60
A
Pulsed Collector Current
ICM
180
A
Diode Continuous Forward Current
IF @TC = 100 °
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
NPN Epitaxial Silicon Transistor Bu406 to-220c
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
Description
BT151 series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic interference.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
400
V
Collector-E
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
20A 650V Trenchstop Insulated Gate Bipolar Transistor Dge20f65m2 to-263-3L
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
650
V
Gate- Emitter Voltage
VGES
±30
V
Collector Current
IC(T=25ºC)
40
A
Collector Current
(Tc=100ºC)
20
A
Pulsed Collector Current
ICM
60
A
Diode Continuous Forward Current
IF @TC = 100 °C
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
2023+ · N-Type Semiconductor
New Original Electronic Components Semiconductor IC Chips Integrated Circuits Mosfets Transistor Sum70040e-Ge3
US$ 0.75-1.25
/ Piece
10 Pieces (MOQ)
10 Pieces (MOQ)
New Original Electronic Components Semiconductor IC Chips Integrated Circuits MOSFETs Transistor SUM70040E-GE3 Product / Item MOSFETs Transistor Supplier / Distributor Sinosky Electronics Co., Ltd. Product Publisher Jessie Zhang D/C (Date Code) 2025+ Package / Case TO-263-3 Packaging Tray, Tube, Ree
Power Electronic Components · CE · N-Type Semiconductor
High-Performance Diode Rectifier Mosfet Transistor for Power Applications
US$ 0.01-0.45
/ Piece
1 Piece (MOQ)
1 Piece (MOQ)
Product Description
Product Features
Featuring a Single Mesa Structure, this exceptional product ensures optimal performance and reliability.
Crafted with a state-of-the-art Table Glass Passivation Process, delivering superior durability and protection.
Ensures consistent Voltage Stability for
- Zhenjiang Zhendi Electric Technology Co., Ltd
-
- Jiangsu, China
- Contact Now
Discrete Device · N-Type Semiconductor · 2010+
To247-F 800W Ost75n65hsmf 30V Trident Gate Bipolar Transistor
US$ 2.5-3
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
General Description
OST75N65HSMF uses advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for mid to high range switching frequency converters.
Featu
- Shanghai Winture Electric Co., Ltd.
-
- Shanghai, China
- Contact Now
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