Element Semiconductor · Analog IC · 2010+
dB101s dB104s dB107s Bridge Rectifier 1A 50V~1000V Transistor
US$ 0.001-0.035
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
Specifications
1A Glass Passivated Bridge Rectifiers DB101(S)-DB107(S)
Features:
1)We are professional diode manufacturer
2)High Quality,Competitive Price
3)Flexible business mode
Product Discription: 1A Glass Passivated Bridge Rectifiers DB101(S)-DB107(S)
Product Name:1A Glass
- Jiangsu Zhongxin Semiconductor Co., Ltd.
-
- Jiangsu, China
- ISO 9001, HSE, GMP, QHSE, EICC...
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Refrigerator · Integrated Circuits Device · Element Semiconductor
Excellent Stability and Uniformity To247-P 800W Ost75n65hsmf 30V Trident Gate Bipolar Transistor
US$ 2.5-3
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
General Description
OST75N65HSMF uses advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for mid to high range switching frequency converters.
Featu
- Shanghai Winture Electric Co., Ltd.
-
- Shanghai, China
- ISO 9001, ISO 14001
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Discrete Device · N-Type Semiconductor
75A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dgc75f65m to-247
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
650
V
Gate- Emitter Voltage
VGES
±30
V
Collector Current
IC(T=25ºC)
150
A
Collector Current
(Tc=100ºC)
75
A
Pulsed Collector Current
ICM
225
A
Diode Continuous Forward Current
IF @TC = 100 °
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- ISO 9001, ISO 14001, IATF16949
- Contact Now
High Voltage N-Channel Super Junction Power Mosfet Transistor
US$ 0.05-0.15
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
4A,650V N-CHANNEL MOSFET
General Description
SVF4N65T/F/M/MJ/D/K is an N-CHANNEL enhancement mode power MOS field effect transistor which is produced using Silan proprietary structure VDMOS technology.
These devices are widely used in AC-DC power suppliers,DC-DC converters and H-Bridge PWM
Discrete Device · N-Type Semiconductor
40A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc40f65m2 to-247
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
650
V
Gate- Emitter Voltage
VGES
±30
V
Collector Current
IC(T=25ºC)
80
A
Collector Current
(Tc=100ºC)
40
A
Pulsed Collector Current
ICM
160
A
Diode Continuous Forward Current
IF @TC = 100 °C
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- ISO 9001, ISO 14001, IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
15A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg15t65dlbbf to-220
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
650
V
Gate- Emitter Voltage
VGES
±30
V
Collector Current
(TJ=100ºC)
15
A
Pulsed Collector Current
ICM
60
A
Diode Continuous Forward Current
IF @TJ = 100 °C
20
A
Diode Pulsed Current
IFM
80
A
T
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- ISO 9001, ISO 14001, IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dgc50f65m2 to-247
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
650
V
Gate- Emitter Voltage
VGES
±20
V
Collector Current
IC(T=25ºC)
100
A
Collector Current
(Tc=100ºC)
50
A
Pulsed Collector Current
ICM
150
A
Diode Continuous Forward Current
IF @TC = 100 °
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- ISO 9001, ISO 14001, IATF16949
- Contact Now
Electronic components Manufacturer 7A 650V plastic seal N-channel Transistor
US$ 0.05-0.15
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
OEM & ODM service supplied
Notes
1.The pictures are taken by camera.
2.You can contact us for a better price.
3.Feel free to contact us if you would like to see other models.
Discrete Device · N-Type Semiconductor
160A 650V Trenchstop Insulated Gate Bipolar Transistor Dgcp160h65L2 to-247plus
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
650
V
Gate- Emitter Voltage
VGES
±30
V
Collector Current
IC(T=25ºC)
240
A
Collector Current
(Tc=100ºC)
160
A
Pulsed Collector Current
ICM
480
A
Diode Continuous Forward Current
IF @TC = 100 °
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- ISO 9001, ISO 14001, IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
40A 650V Trenchstop Insulated Gate Bipolar Transistor Dgn40f65m2 to-3pn
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
650
V
Gate- Emitter Voltage
VGES
±30
V
Collector Current
IC(T=25ºC)
80
A
Collector Current
(Tc=100ºC)
40
A
Pulsed Collector Current
ICM
160
A
Diode Continuous Forward Current
IF @TC = 100 °C
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- ISO 9001, ISO 14001, IATF16949
- Contact Now
-
What are the common applications of P-Type Transistor?
P-Type Transistor is commonly used in electronic components like diodes, transistors, and integrated circuits. They play a crucial role in controlling the flow of electricity and determining the behavior of semiconductor devices.
-
How can I identify a reliable supplier for P-Type Transistor in China?
Identifying a reputable supplier in China involves thorough research, checking certifications, customer feedback, and product quality assessments. Contacting multiple suppliers, requesting samples, and visiting their production facilities can help assess their credibility.
-
What benefits do manufacturers get from sourcing P-Type Transistors wholesale?
Manufacturers sourcing P-Type Transistors wholesale can benefit from cost savings, bulk purchasing power, consistent quality, and improved production efficiency. Working with a trusted supplier enhances collaboration, secures a stable supply chain and quality assurance.
Discrete Device · N-Type Semiconductor
NPN Epitaxial Silicon Transistor Bu406 to-220c
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
Description
BT151 series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic interference.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
400
V
Collector-E
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- ISO 9001, ISO 14001, IATF16949
- Contact Now
Television · Discrete Device · Element Semiconductor
To220f 800W Osg80r650FF Single/Dual N Channel 30V PC Power Transistor
US$ 0.12-0.15
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
General Description
The high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The Generic series is optimized for
- Shanghai Winture Electric Co., Ltd.
-
- Shanghai, China
- ISO 9001, ISO 14001
- Contact Now
Discrete Device · N-Type Semiconductor
40A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc40h65m2 to-247
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
650
V
Gate- Emitter Voltage
VGES
±30
V
Collector Current
IC(T=25ºC)
80
A
Collector Current
(Tc=100ºC)
40
A
Pulsed Collector Current
ICM
160
A
Diode Continuous Forward Current
IF @TC = 100 °C
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- ISO 9001, ISO 14001, IATF16949
- Contact Now
Insulated Gate Bipolar Transistor IGBT G40n60d to-247 **%off
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
600
V
Gate- Emitter Voltage
VGES
±20
V
Collector Current
IC(T=25ºC)
80
A
Collector Current
(Tc=100ºC)
40
A
Pulsed Collector Current
ICM
120
A
Diode Continuous Forward Current
IF @TC = 100 °C
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- ISO 9001, ISO 14001, IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
60A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dgc60f65m to-247
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
650
V
Gate- Emitter Voltage
VGES
±30
V
Collector Current
IC(T=25ºC)
120
A
Collector Current
(Tc=100ºC)
60
A
Pulsed Collector Current
ICM
180
A
Diode Continuous Forward Current
IF @TC = 100 °
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- ISO 9001, ISO 14001, IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40f120m2 to-247
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
1200
V
Gate- Emitter Voltage
VGES
±30
V
Collector Current
IC(T=25ºC)
80
A
Collector Current
(Tc=100ºC)
40
A
Pulsed Collector Current
ICM
160
A
Diode Continuous Forward Current
IF @TC = 100 °
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- ISO 9001, ISO 14001, IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
60A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg60n65D
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
650
V
Gate- Emitter Voltage
VGES
±20
V
Collector Current
IC(T=25ºC)
120
A
Collector Current
(Tc=100ºC)
60
A
Pulsed Collector Current
ICM
180
A
Diode Continuous Forward Current
IF @TC = 100 °
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- ISO 9001, ISO 14001, IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
Insulated Gate Bipolar Transistor IGBT G15n60d to-220f
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
600
V
Gate- Emitter Voltage
VGES
±20
V
Collector Current
IC(T=25ºC)
30
A
Collector Current
(Tc=100ºC)
15
A
Pulsed Collector Current
ICM
45
A
Diode Continuous Forward Current
IF @TC = 100 °C
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- ISO 9001, ISO 14001, IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
6A 650V Trenchstop Insulated Gate Bipolar Transistor for Brushless Motor Dgd06f65m2 to-252b
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
650
V
Gate- Emitter Voltage
VGES
±30
V
Collector Current
IC(T=25ºC)
12
A
Collector Current
(Tc=100ºC)
6
A
Pulsed Collector Current
ICM
35
A
Diode Continuous Forward Current
IF @TC = 100 °C
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- ISO 9001, ISO 14001, IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
80A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc80f65m
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
650
V
Gate- Emitter Voltage
VGES
±30
V
Collector Current
IC(T=25ºC)
160
A
Collector Current
(Tc=100ºC)
80
A
Pulsed Collector Current
ICM
240
A
Diode Continuous Forward Current
IF @TC = 100 °
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- ISO 9001, ISO 14001, IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
Silicon NPN Triple Diffused Transistor 5200 to-3pl **%off
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
230
V
Collector- Emitter Voltage
VCEO
230
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
Ic
15
A
Base Current
IB
1.5
A
3PN Collector Dissipation
TC=25ºC
PC
120
W
3PL Collector Dissipation
TC=25ºC
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- ISO 9001, ISO 14001, IATF16949
- Contact Now
Insulated Gate Bipolar Transistor IGBT G40t60d to-3pn
1800 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
600
V
Gate- Emitter Voltage
VGES
±20
V
Collector Current
IC(T=25ºC)
80
A
Collector Current
(Tc=100ºC)
40
A
Pulsed Collector Current
ICM
120
A
Diode Continuous Forward Current
IF @TC = 100 °C
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- ISO 9001, ISO 14001, IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
30A 650V Trenchstop Insulated Gate Bipolar Transistor Dgn30f65m2 to-3pn
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
650
V
Gate- Emitter Voltage
VGES
±30
V
Collector Current
IC(T=25ºC)
60
A
Collector Current
(Tc=100ºC)
30
A
Pulsed Collector Current
ICM
180
A
Diode Continuous Forward Current
IF @TC = 100 °C
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- ISO 9001, ISO 14001, IATF16949
- Contact Now
Insulated Gate Bipolar Transistor IGBT G60n65D to-247 **%off
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
600
V
Gate- Emitter Voltage
VGES
±20
V
Collector Current
IC(T=25ºC)
120
A
Collector Current
(Tc=100ºC)
60
A
Pulsed Collector Current
ICM
180
A
Diode Continuous Forward Current
IF @TC = 100 °
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- ISO 9001, ISO 14001, IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
20A 650V Trenchstop Insulated Gate Bipolar Transistor Dge20f65m2 to-263-3L
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
650
V
Gate- Emitter Voltage
VGES
±30
V
Collector Current
IC(T=25ºC)
40
A
Collector Current
(Tc=100ºC)
20
A
Pulsed Collector Current
ICM
60
A
Diode Continuous Forward Current
IF @TC = 100 °C
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- ISO 9001, ISO 14001, IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
30A 650V Trenchstop Insulated Gate Bipolar Transistor Dgf30f65m2
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
650
V
Gate- Emitter Voltage
VGES
±30
V
Collector Current
IC(TJ=25ºC)
60
A
Collector Current
(TJ=100ºC)
30
A
Pulsed Collector Current
ICM
180
A
Diode Continuous Forward Current
IF @TJ = 100 °
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- ISO 9001, ISO 14001, IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
50A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg50t65dlbbw
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
650
V
Gate- Emitter Voltage
VGES
±30
V
Collector Current
(TJ=100ºC)
50
A
Pulsed Collector Current
ICM
150
A
Diode Continuous Forward Current
IF @TJ = 100 °C
100
A
Diode Pulsed Current
IFM
160
A
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- ISO 9001, ISO 14001, IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
Insulated Gate Bipolar Transistor IGBT G15n120d to-247
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
1200
V
Gate- Emitter Voltage
VGES
±20
V
Collector Current
IC(T=25ºC)
30
A
Collector Current
(Tc=100ºC)
15
A
Pulsed Collector Current
ICM
45
A
Diode Continuous Forward Current
IF @TC = 100 °C
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- ISO 9001, ISO 14001, IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
Insulated Gate Bipolar Transistor IGBT G30n60d to-247
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
600
V
Gate- Emitter Voltage
VGES
±20
V
Collector Current
IC(T=25ºC)
60
A
Collector Current
(Tc=100ºC)
30
A
Pulsed Collector Current
ICM
90
A
Diode Continuous Forward Current
IF @TC = 100 °C
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- ISO 9001, ISO 14001, IATF16949
- Contact Now
factory original 2A 650V adaptor mosfet transistor
US$ 0.05-0.15
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
Why choose us?
* Specilaze in electronic components for around 14 years
* 100% Tested before sale
* Cooperate with over 35 famous brands from domestic and international market
* Competitive and reasonable price
* Abundant inventory and short lead time about 3-7 days
* 1 Year warranty
* 24
- CTC Technology Co., Ltd.
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5(5.0)
"Fast Dispatch"Fast Dispatch - Guangdong, China
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