Super-Junction High Voltage N-Channel Mosfet Toll Isolated Package for Pfc Power Factor Correction Circuit SMPS Power Supply Made in China
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Product Highlights
- Advanced TGBTTM Technology: Uses patented Trident-Gate Bipolar Transistor technology for superior performance.
- Low VCE(sat) & Gate Charge: Provides extremely low saturation voltage and gate charge for efficiency.
- High Voltage Rating: Features a 650V collector-emitter breakdown voltage for robust operation.
- Fast Soft Antiparallel Diode: Equipped with a fast and soft antiparallel diode for excellent switching.
- High Pulse Current Capacity: Supports up to 120A pulsed collector current for demanding applications.
- RoHS & ISO Certified: Meets strict RoHS and ISO certification standards for quality assurance.
- Versatile Applications: Ideal for PV inverters, induction converters, and uninterruptible power supplies.
Product Attributes
- Certification
- RoHS, ISO
- Encapsulation Structure
- Chip Transistor
- Installation
- Plug-in Triode
- Model NO.
- OSG60R045TT4ZF
- Working Frequency
- High Frequency
- Power Level
- Medium Power
- Function
- Power Triode, Switching Triode
- Structure
- NPN
- Material
- Silicon
- Vges
- 10V
- Package
- Toll
- Vds
- 600V
- ID,Pulse
- 198A
- Transport Package
- Carton
- Specification
- 35x30x37cm
- Trademark
- Orientalsemi
- Origin
- China
- HS Code
- 8541290000
- Production Capacity
- Over 1kk/Month
- Package Size
- 59.00cm * 34.00cm * 15.00cm
- Package Gross Weight
- 18.000kg
Shipping
- Shipping Cost:
- Contact the supplier about freight and estimated delivery time.
Online Trading Protection
- Payment Guarantee
-
Platform-protected payments with refund support for eligible order issues.
- Platform Logistics
- Clearer shipment tracking with platform-supported logistics.
- Inspection Service
- Optional pre-shipment inspection for quality and quantity checks.
- After-Sales & Dispute Handling
- Platform-assisted dispute resolution, including refunds or returns when applicable.
Only orders placed and paid through Made-in-China.com Secured Trading are eligible for payment protection and the corresponding platform services.
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Product Description
General Description
OSG60R045TT4ZF is high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
Features
. Low RDS(ON) & FOM
. Extremely low switching loss
. Excellent reliability and uniformity
. Fast switching and soft recovery
Applications
. PC power
. Telecom power
. Server powerr
. EV Charger
. Motor driver
| Parameter | Value | Unit |
| VDS | 600 | V |
| ID, pulse | 136 | A |
| RDS(ON), max @VGS=10V | 45 | mΩ |
| Qg | 93 | nC |
| PD | 330 | W |
Marking Information
| ProductName | Package | Marking |
| OSG60R045TT4ZF | TOLL | OSG60R045TT4Z |
Absolute Maximum Ratings at Tvj=25°C unless otherwise noted
| Parameter | Symbol | Value | Unit |
| Drain-source voltage | VDS | 600 | V |
| Gate-source voltage(static) | VGS | ±20 | V |
| Gate-source voltage(dynamic) | ±30 | V | |
| Continuous drain current1), TC=25 °C | ID | 52 | A |
| Continuousdrain current1), TC=100 °C | 33 | ||
| Pulsed drain current2), TC=25 °C | ID, pulse | 136 | A |
| Continuous diode forward current1), TC=25 °C | IS | 52 | A |
| Diode pulsed current2), TC=25 °C | IS, pulse | 136 | A |
| Power dissipation3), TC=25 °C | PD | 330 | W |
| Single pulsed avalanche energy5) | EAS | 405 | mJ |
| =0…480 VMOSFET dv/dt ruggedness, VDS | dv/dt | 100 | V/ns |
| =0…480 V, IReverse diode dv/dt, VDSSD≤ID | dv/dt | 100 | V/ns |
| Operation and storage temperature | Tstg, Tj | -55 to 150 | °C |
Thermal Characteristics
| Parameter | Symbol | Value | Unit |
| Thermal resistance, junction-case | RθJC | 0.38 | °C/W |
| Thermal resistance, junction-ambient4) | RθJA | 62 | °C/W |
Electrical Characteristics at Tvj=25°C unless otherwise specified
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Drain-source breakdown voltage |
BVDSS | 600 | V | VGS=0 V, ID=1mA | ||
| Gate threshold voltage |
VGS(th) | 3.5 | 5.5 | V | VDS=VGS, ID=1mA | |
| Drain-source on- state resistance |
RDS(ON) | 39 | 45 | mΩ | VGS=10 V, ID=26A | |
| 93 | VGS=10 V, ID=26A, Tj=150°C |
|||||
| Gate-source leakage current |
IGSS | 100 | nA | VGS=20 V | ||
| -100 | VGS=-20 V | |||||
| Drain-source leakage current |
IDSS | 10 | μA | VDS=600 V, VGS=0 V | ||
| Gate resistance | RG | 3 | Ω | ƒ=1 MHz, Open drain |
Dynamic Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Input capacitance | Ciss | 4635 | pF | VGS=0 V, VDS=50 V, ƒ=100 kHz |
||
| Output capacitance | Coss | 260 | pF | |||
| Reverse transfer capacitance | Crss | 4 | pF | |||
| Effective output capacitance, energy related |
Co(er) | 170 | pF | VGS=0V, VDS=0V-400V |
||
| Effective output capacitance, time related |
Co(tr) | 1020 | pF | |||
| Turn-on delay time | td(on) | 36 | ns | VGS=10 V, VDS=400 V, RG=2Ω, ID=20A |
||
| Rise time | tr | 10 | ns | |||
| Turn-off delay time | td(off) | 74 | ns | |||
| Fall time | tf | 3 | ns |
Gate Charge Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Totalgate charge | Qg | 93 | nC | VGS=10 V, VDS=400 V, ID=20A |
||
| Gate-source charge | Qgs | 31 | nC | |||
| Gate-drain charge | Qgd | 33 | nC | |||
| Gate plateau voltage | Vplateau | 7.3 | V |
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Diode forward voltage | VSD | 1.3 | V | IS=52A, VGS=0 V |
||
| Reverse recovery time | trr | 167 | ns | VR=400 V, IS=20A, di/dt=100 A/μs |
||
| Reverse recovery charge | Qrr | 1.3 | μC | |||
| Peak reverse recovery current | Irrm | 14.5 | A |
Note
1) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating; pulse width limited by max. junction temperature.
3) Pd is based on max. junction temperature, using junction-case thermal resistance.
Supply Chian
Green Product Declaration






About the Supplier
This supplier has been audited by BV. Verify the report on the official BV website with ID "MIC-ASI2241875". Items marked "" are certified.
Company Profile
Founded in 2009, Winture has been deeply engaged in the Mosfet transistor and industrial Connectors for 15 years and has been a close partner and high-qualified supplier of the worldwide top 500 and emerging Chinese manufacturers. About Oriental Semiconductor, it is a tens of billions of chip listed companies and manufacturers in China, with a strong R & D team and design capabilities, is developing rapidly. Currently, Winture is the only overseas trading company for Oriental Semiconductor's North American market and the Asia-Pacific region. Winture focus on developing the market of high-voltage super junction MOSFET, medium and low-voltage shielded gate MOSFET, super silicon MOSFET and Tri gate IGBT. Winture has the excellent and sufficient market research in high-performance power device as well as the design ability. And always focused on the industrial and automotive applications represented by new energy vehicle DC charging piles, on board chargers, 5G base station power supply and communication power supply, photovoltaic inverter and energy storage, data center server power supply and industrial lighting power supply. Winture has a long term strategic cooperation with relevant leading manufacturers.
With deep technical accumulation in the field of devices as a core semiconductor technology, focusing on semiconductor device technology innovation, has a number of core patents for semiconductor devices. In the second half of 2013, the technical paper of Oriental Semiconductor Semiconductor's original semi-floating gate device was published in the American journal Science, marking a major breakthrough for domestic scientists in the direction of semiconductor core technology, and the news broadcast, People's Daily and other media have made headline key reports, which has attracted great attention from the industry at home and abroad. In 2016, the core chip for DC high-power charging pile for new energy vehicles independently developed by Oriental Semiconductor was successfully mass-produced, breaking the monopoly of foreign manufacturers. At present, Oriental Semiconductor has become a leader in the field of high-performance power semiconductors in China, and has taken a solid step in replacing imported semiconductor products in the field of new energy, and its products have entered a number of international first-line customers and have been well received by customers. So far, in EV charging field, 80% manufacture choose us. In terms of chips for photovoltaic inverters, Oriental Semiconductor chips have been steadily supplied for some very famous USA manufacturers. Advanced patented Trident-Gate Bipolar Transistor (TGBT™ ) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for MID to high range switching frequency converters.
Winture aim: To reduce the production cost with stable and cost-effective products
More environmentally friendly and less noise
Excellent stability and uniformity
Extremely low switching loss
Low RDS(ON) & FOM
Fast and soft antiparallel diode
About Our Factory & Business Background
- Address
- Room 302, Building 20, No. 518 Xinzhuan Road, Songjiang District, Shanghai China (Zip code:201612)
- Terms of Payment
- LC, T/T, D/P, Western Union
- International Commercial Terms(Incoterms)
- FOB, EXW, CIF, DDP, FCA
- Average Lead Time
-
Peak Season Lead Time: one month
Off Season Lead Time: 3-6 months - Nearest Port
- Shanghai
Our Production Capability & Technical Expertise
- Main Products
- Mosfet Transistor Power Semi Conductor, EV Charger Power Mosfet Transistor Power Semi Co, High Voltage Super Junction Mosfet Trans Istor, New Energy Vehicle DC Charging Mosfet Transistor, 5g Base Station Power Supply Mosfet Transistor, Photovoltaic Inverter Mosfet Transistor, Energy Storage Mosfet Transistor, Data Center Server Mosfet Transistor, Industrial Lighting Power Mosfet, DC Charging Power Mosfet Tansistor
Our Industry Experience & Global Business Record
- Export Year
- 2019-01-01
- Main Markets
- North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
FAQ
- What technology does this IGBT use?
- It utilizes advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology.
- What is the maximum collector-emitter voltage?
- The maximum collector-emitter voltage (VCES) is 650V.
- What are the typical applications for this device?
- It is suitable for PV inverters, induction converters, and uninterruptible power supplies.
- What is the package type for OST30N65FMF?
- The package type is TO220F.
- What certifications does the product have?
- The product is certified with RoHS and ISO standards.
- What is the typical gate charge (Qg)?
- The typical gate charge (Qg) is 54 nC.
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