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Super-Junction High Voltage N-Channel Mosfet Toll Isolated Package for Pfc Power Factor Correction Circuit SMPS Power Supply Made in China

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  • 5 yrs

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Product Highlights

  • Advanced TGBTTM Technology: Uses patented Trident-Gate Bipolar Transistor technology for superior performance.
  • Low VCE(sat) & Gate Charge: Provides extremely low saturation voltage and gate charge for efficiency.
  • High Voltage Rating: Features a 650V collector-emitter breakdown voltage for robust operation.
  • Fast Soft Antiparallel Diode: Equipped with a fast and soft antiparallel diode for excellent switching.
  • High Pulse Current Capacity: Supports up to 120A pulsed collector current for demanding applications.
  • RoHS & ISO Certified: Meets strict RoHS and ISO certification standards for quality assurance.
  • Versatile Applications: Ideal for PV inverters, induction converters, and uninterruptible power supplies.

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Product Images of Super-Junction High Voltage N-Channel Mosfet Toll Isolated Package for Pfc Power Factor Correction Circuit SMPS Power Supply Made in China

Super-Junction High Voltage N-Channel Mosfet Toll Isolated Package for Pfc Power Factor Correction Circuit SMPS Power Supply Made in China pictures & photos
Super-Junction High Voltage N-Channel Mosfet Toll Isolated Package for Pfc Power Factor Correction Circuit SMPS Power Supply Made in China
Super-Junction High Voltage N-Channel Mosfet Toll Isolated Package for Pfc Power Factor Correction Circuit SMPS Power Supply Made in China pictures & photos
Super-Junction High Voltage N-Channel Mosfet Toll Isolated Package for Pfc Power Factor Correction Circuit SMPS Power Supply Made in China
Super-Junction High Voltage N-Channel Mosfet Toll Isolated Package for Pfc Power Factor Correction Circuit SMPS Power Supply Made in China pictures & photos
Super-Junction High Voltage N-Channel Mosfet Toll Isolated Package for Pfc Power Factor Correction Circuit SMPS Power Supply Made in China
Super-Junction High Voltage N-Channel Mosfet Toll Isolated Package for Pfc Power Factor Correction Circuit SMPS Power Supply Made in China pictures & photos
Super-Junction High Voltage N-Channel Mosfet Toll Isolated Package for Pfc Power Factor Correction Circuit SMPS Power Supply Made in China
Super-Junction High Voltage N-Channel Mosfet Toll Isolated Package for Pfc Power Factor Correction Circuit SMPS Power Supply Made in China pictures & photos
Super-Junction High Voltage N-Channel Mosfet Toll Isolated Package for Pfc Power Factor Correction Circuit SMPS Power Supply Made in China
Super-Junction High Voltage N-Channel Mosfet Toll Isolated Package for Pfc Power Factor Correction Circuit SMPS Power Supply Made in China pictures & photos
Super-Junction High Voltage N-Channel Mosfet Toll Isolated Package for Pfc Power Factor Correction Circuit SMPS Power Supply Made in China
  • Super-Junction High Voltage N-Channel Mosfet Toll Isolated Package for Pfc Power Factor Correction Circuit SMPS Power Supply Made in China
    Super-Junction High Voltage N-Channel Mosfet Toll Isolated Package for Pfc Power Factor Correction Circuit SMPS Power Supply Made in China
  • Super-Junction High Voltage N-Channel Mosfet Toll Isolated Package for Pfc Power Factor Correction Circuit SMPS Power Supply Made in China
    Super-Junction High Voltage N-Channel Mosfet Toll Isolated Package for Pfc Power Factor Correction Circuit SMPS Power Supply Made in China
  • Super-Junction High Voltage N-Channel Mosfet Toll Isolated Package for Pfc Power Factor Correction Circuit SMPS Power Supply Made in China
    Super-Junction High Voltage N-Channel Mosfet Toll Isolated Package for Pfc Power Factor Correction Circuit SMPS Power Supply Made in China
  • Super-Junction High Voltage N-Channel Mosfet Toll Isolated Package for Pfc Power Factor Correction Circuit SMPS Power Supply Made in China
    Super-Junction High Voltage N-Channel Mosfet Toll Isolated Package for Pfc Power Factor Correction Circuit SMPS Power Supply Made in China
  • Super-Junction High Voltage N-Channel Mosfet Toll Isolated Package for Pfc Power Factor Correction Circuit SMPS Power Supply Made in China
    Super-Junction High Voltage N-Channel Mosfet Toll Isolated Package for Pfc Power Factor Correction Circuit SMPS Power Supply Made in China
  • Super-Junction High Voltage N-Channel Mosfet Toll Isolated Package for Pfc Power Factor Correction Circuit SMPS Power Supply Made in China
    Super-Junction High Voltage N-Channel Mosfet Toll Isolated Package for Pfc Power Factor Correction Circuit SMPS Power Supply Made in China

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Product Description

Product Description

 

General Description
OSG60R045TT4ZF is high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.

Features
.  Low RDS(ON) & FOM
.  Extremely low switching loss
.  Excellent reliability and uniformity
.  
Fast switching and soft recovery


Applications
. PC power
. Telecom power
. Server powerr

. EV Charger
. Motor driver
 
Key Performance Parameters
Parameter  Value  Unit 
VDS  600  V 
ID, pulse  136  A 
RDS(ON), max @VGS=10V  45  mΩ 
Qg  93  nC 
PD  330  W 
 
 
Marking Information
 
 Package & Pin Information
ProductName  Package  Marking 
OSG60R045TT4ZF  TOLL  OSG60R045TT4Z 

Absolute Maximum Ratings at Tvj=25°C unless otherwise noted 
Parameter  Symbol  Value  Unit 
Drain-source voltage  VDS  600  V 
Gate-source voltage(static)  VGS  ±20  V 
Gate-source voltage(dynamic)  ±30  V 
Continuous drain current1), TC=25 °C  ID  52  A 
Continuousdrain current1), TC=100 °C  33 
Pulsed drain current2), TC=25 °C  ID, pulse  136  A 
Continuous diode forward current1), TC=25 °C  IS  52  A 
Diode pulsed current2), TC=25 °C  IS, pulse  136  A 
Power dissipation3), TC=25 °C  PD  330  W 
Single pulsed avalanche energy5)  EAS  405  mJ 
=0…480 VMOSFET dv/dt ruggedness, VDS  dv/dt  100  V/ns 
=0…480 V, IReverse diode dv/dt, VDSSD≤ID  dv/dt  100  V/ns 
Operation and storage temperature  Tstg, Tj  -55 to 150  °C 
 

Thermal Characteristics
Parameter  Symbol  Value  Unit 
Thermal resistance, junction-case  RθJC  0.38  °C/W 
Thermal resistance, junction-ambient4)  RθJA  62  °C/W 
 

Electrical Characteristics at Tvj=25°C unless otherwise specified
Parameter  Symbol  Min.  Typ.  Max.  Unit  Test condition 
Drain-source 
breakdown voltage 
BVDSS  600      V  VGS=0 V, ID=1mA 
Gate threshold 
voltage 
VGS(th)  3.5    5.5  V  VDS=VGS, ID=1mA 
Drain-source on-
state resistance 
RDS(ON)    39  45  mΩ  VGS=10 V, ID=26A 
  93    VGS=10 V, ID=26A,
Tj=150°C 
Gate-source 
leakage current 
IGSS      100  nA  VGS=20 V 
    -100  VGS=-20 V 
Drain-source 
leakage current 
IDSS      10  μA  VDS=600 V, VGS=0 V 
Gate resistance  RG    3    Ω  ƒ=1 MHz, Open drain 
 


Dynamic Characteristics 
Parameter  Symbol  Min.  Typ.  Max.  Unit  Test condition 
Input capacitance  Ciss    4635    pF  VGS=0 V,
VDS=50 V,
ƒ=100 kHz 
Output capacitance  Coss    260    pF 
Reverse transfer capacitance  Crss    4    pF 
Effective output capacitance,
energy related 
Co(er)    170    pF  VGS=0V,
VDS=0V-400V 
Effective output capacitance,
time related 
Co(tr)    1020    pF 
Turn-on delay time  td(on)    36    ns  VGS=10 V,
VDS=400 V,
RG=2Ω,
ID=20A 
Rise time  tr    10    ns 
Turn-off delay time  td(off)    74    ns 
Fall time  tf    3    ns 
 

Gate Charge Characteristics
Parameter  Symbol  Min.  Typ.  Max.  Unit  Test condition 
Totalgate charge  Qg    93    nC  VGS=10 V,
VDS=400 V,
ID=20A 
Gate-source charge  Qgs    31    nC 
Gate-drain charge  Qgd    33    nC 
Gate plateau voltage  Vplateau    7.3    V 
 
Body Diode Characteristics
Parameter  Symbol  Min.  Typ.  Max.  Unit  Test condition 
Diode forward voltage  VSD      1.3  V  IS=52A, 
VGS=0 V 
Reverse recovery time  trr    167    ns  VR=400 V,
IS=20A,
di/dt=100 A/μs 
Reverse recovery charge  Qrr    1.3    μC 
Peak reverse recovery current  Irrm    14.5    A 
 

Note
1)    Calculated continuous current based on maximum allowable junction temperature. 2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance.


 

Supply Chian

Super-Junction High Voltage N-Channel Mosfet Toll Isolated Package for Pfc Power Factor Correction Circuit SMPS Power Supply Made in China


Green Product Declaration

Super-Junction High Voltage N-Channel Mosfet Toll Isolated Package for Pfc Power Factor Correction Circuit SMPS Power Supply Made in China
Super-Junction High Voltage N-Channel Mosfet Toll Isolated Package for Pfc Power Factor Correction Circuit SMPS Power Supply Made in ChinaSuper-Junction High Voltage N-Channel Mosfet Toll Isolated Package for Pfc Power Factor Correction Circuit SMPS Power Supply Made in ChinaSuper-Junction High Voltage N-Channel Mosfet Toll Isolated Package for Pfc Power Factor Correction Circuit SMPS Power Supply Made in ChinaSuper-Junction High Voltage N-Channel Mosfet Toll Isolated Package for Pfc Power Factor Correction Circuit SMPS Power Supply Made in ChinaSuper-Junction High Voltage N-Channel Mosfet Toll Isolated Package for Pfc Power Factor Correction Circuit SMPS Power Supply Made in ChinaSuper-Junction High Voltage N-Channel Mosfet Toll Isolated Package for Pfc Power Factor Correction Circuit SMPS Power Supply Made in China

About the Supplier

This supplier has been audited by BV. Verify the report on the official BV website with ID "MIC-ASI2241875". Items marked "verified" are certified.

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Shanghai Winture Electric Co., Ltd.
Shanghai Winture Electric Co., Ltd.
Shanghai Winture Electric Co., Ltd.
Shanghai Winture Electric Co., Ltd.
Shanghai Winture Electric Co., Ltd.
Shanghai Winture Electric Co., Ltd.
Shanghai Winture Electric Co., Ltd.
Shanghai Winture Electric Co., Ltd.

About Our Factory & Business Background

Address
Room 302, Building 20, No. 518 Xinzhuan Road, Songjiang District, Shanghai China (Zip code:201612)
Terms of Payment
LC, T/T, D/P, Western Union
International Commercial Terms(Incoterms)
FOB, EXW, CIF, DDP, FCA
Average Lead Time
Peak Season Lead Time: one month
Off Season Lead Time: 3-6 months
Nearest Port
Shanghai

Our Production Capability & Technical Expertise

Main Products
Mosfet Transistor Power Semi Conductor, EV Charger Power Mosfet Transistor Power Semi Co, High Voltage Super Junction Mosfet Trans Istor, New Energy Vehicle DC Charging Mosfet Transistor, 5g Base Station Power Supply Mosfet Transistor, Photovoltaic Inverter Mosfet Transistor, Energy Storage Mosfet Transistor, Data Center Server Mosfet Transistor, Industrial Lighting Power Mosfet, DC Charging Power Mosfet Tansistor

Our Industry Experience & Global Business Record

Export Year
2019-01-01
Main Markets
North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe

FAQ

What technology does this IGBT use?
It utilizes advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology.
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage (VCES) is 650V.
What are the typical applications for this device?
It is suitable for PV inverters, induction converters, and uninterruptible power supplies.
What is the package type for OST30N65FMF?
The package type is TO220F.
What certifications does the product have?
The product is certified with RoHS and ISO standards.
What is the typical gate charge (Qg)?
The typical gate charge (Qg) is 54 nC.

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