Home Electrical & Electronics N-type Semiconductor N-Doped Silicon Wafer Hangzhou HCJingRui 2025 Product List

Hangzhou HCJingRui

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6n Green Silicon Carbide Sic Powder Conductive Single Crystal Growth

6n Green Silicon Carbide Sic Powder Conductive Single Crystal Growth

6n Green Silicon Carbide Sic Powder Conductive Single Crystal Growth

6n Green Silicon Carbide Sic Powder Conductive Single Crystal Growth

6n Green Silicon Carbide Sic Powder Conductive Single Crystal Growth

6n Green Silicon Carbide Sic Powder Conductive Single Crystal Growth

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6n Green Silicon Carbide Sic Powder Conductive Single Crystal Growth

US$ 170-195 / kg

10 kg (MOQ)

Hangzhou HCJingRui Technology Co., Ltd.

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Certification: REACH

Function: Crystal Gowth

Color: Green

Purity: 6n

Type: N-Type 3c-Sic

Customization: Support Customization

6 Inch Dummy Grade Silicon Carbide Wafer N-Type Semiconductor Sic Wafer

6 Inch Dummy Grade Silicon Carbide Wafer N-Type Semiconductor Sic Wafer

6 Inch Dummy Grade Silicon Carbide Wafer N-Type Semiconductor Sic Wafer

6 Inch Dummy Grade Silicon Carbide Wafer N-Type Semiconductor Sic Wafer

6 Inch Dummy Grade Silicon Carbide Wafer N-Type Semiconductor Sic Wafer

6 Inch Dummy Grade Silicon Carbide Wafer N-Type Semiconductor Sic Wafer

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6 Inch Dummy Grade Silicon Carbide Wafer N-Type Semiconductor Sic Wafer

US$ 95-120 / piece

10 piece (MOQ)

Hangzhou HCJingRui Technology Co., Ltd.

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Certification: RoHS

Color: Green

Diameter: 6inch

Hickness: 350±25μm

Poly Type: 4h

Ttv: ≤20 μm

2-12 Inch Epitaxially Grown Sapphire Substrate Wafers

2-12 Inch Epitaxially Grown Sapphire Substrate Wafers

2-12 Inch Epitaxially Grown Sapphire Substrate Wafers

2-12 Inch Epitaxially Grown Sapphire Substrate Wafers

2-12 Inch Epitaxially Grown Sapphire Substrate Wafers

2-12 Inch Epitaxially Grown Sapphire Substrate Wafers

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2-12 Inch Epitaxially Grown Sapphire Substrate Wafers

US$ 8-15 / piece

10 piece (MOQ)

Hangzhou HCJingRui Technology Co., Ltd.

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Application: Detector, Diode, LCD Display Controller, Power Electronic Components, Television, Temperature Measurement, Single Crystal Substrate Material

Batch Number: 2024

Manufacturing Technology: Optoelectronic Semiconductor

Material: Sapphire

Model: LED

Type: Intrinsic Semiconductor

8inch Ultra-P Grade 4h N Type Semiconductor Silicon Carbide Wafer Sic Substrate

8inch Ultra-P Grade 4h N Type Semiconductor Silicon Carbide Wafer Sic Substrate

8inch Ultra-P Grade 4h N Type Semiconductor Silicon Carbide Wafer Sic Substrate

8inch Ultra-P Grade 4h N Type Semiconductor Silicon Carbide Wafer Sic Substrate

8inch Ultra-P Grade 4h N Type Semiconductor Silicon Carbide Wafer Sic Substrate

8inch Ultra-P Grade 4h N Type Semiconductor Silicon Carbide Wafer Sic Substrate

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8inch Ultra-P Grade 4h N Type Semiconductor Silicon Carbide Wafer Sic Substrate

US$ 2400-2500 / piece

3 piece (MOQ)

Hangzhou HCJingRui Technology Co., Ltd.

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Application: Diode, Power Electronic Components

Certification: RoHS

Manufacturing Technology: Pvt

Material: 6n Sic Powder

Model: 4h N-Type

Package: Epi-Ready with Vacuum Packaging

6 Inch Dummy Grade High Purity Semi-Insulating Silicon Carbide Wafer Price

6 Inch Dummy Grade High Purity Semi-Insulating Silicon Carbide Wafer Price

6 Inch Dummy Grade High Purity Semi-Insulating Silicon Carbide Wafer Price

6 Inch Dummy Grade High Purity Semi-Insulating Silicon Carbide Wafer Price

6 Inch Dummy Grade High Purity Semi-Insulating Silicon Carbide Wafer Price

6 Inch Dummy Grade High Purity Semi-Insulating Silicon Carbide Wafer Price

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6 Inch Dummy Grade High Purity Semi-Insulating Silicon Carbide Wafer Price

US$ 538-618 / piece

5 piece (MOQ)

Hangzhou HCJingRui Technology Co., Ltd.

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Application: Diode, Power Electronic Components, Semiconductor

Certification: CCC, CE, RoHS

Manufacturing Technology: Pvt

Material: 6n

Model: 6inch Dummy Grade

Package: Epi-Ready with Vacuum Packaging

4inch Dummy Grade High Purity Semi-Insulating Silicon Carbide Wafer

4inch Dummy Grade High Purity Semi-Insulating Silicon Carbide Wafer

4inch Dummy Grade High Purity Semi-Insulating Silicon Carbide Wafer

4inch Dummy Grade High Purity Semi-Insulating Silicon Carbide Wafer

4inch Dummy Grade High Purity Semi-Insulating Silicon Carbide Wafer

4inch Dummy Grade High Purity Semi-Insulating Silicon Carbide Wafer

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4inch Dummy Grade High Purity Semi-Insulating Silicon Carbide Wafer

US$ 208-248 / piece

5 piece (MOQ)

Hangzhou HCJingRui Technology Co., Ltd.

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Certification: CCC, CE, RoHS

Ttv: ≤15μm

Diameter: 99.5~100mm

Thickness: 500±25μm

Standard: 4 Inch D Grade

Port: Shanghai, China

4-Inch Self-Supporting GaN Wafer (undoped) LED China

4-Inch Self-Supporting GaN Wafer (undoped) LED China

4-Inch Self-Supporting GaN Wafer (undoped) LED China

4-Inch Self-Supporting GaN Wafer (undoped) LED China

4-Inch Self-Supporting GaN Wafer (undoped) LED China

4-Inch Self-Supporting GaN Wafer (undoped) LED China

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4-Inch Self-Supporting GaN Wafer (undoped) LED China

US$ 10-30 / piece

10 piece (MOQ)

Hangzhou HCJingRui Technology Co., Ltd.

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Application: Diode, Power Electronic Components

Certification: CCC, CE, RoHS

Size: Ф 100 ± 0.3 mm

Thickness: 650 ± 50μm

Resistivity 300K: < 0.5 Ω*Cm

Ttv: ≤ 30μm

Premium 2-6 Inch Undoped GaN Wafer for Power Devices

Premium 2-6 Inch Undoped GaN Wafer for Power Devices

Premium 2-6 Inch Undoped GaN Wafer for Power Devices

Premium 2-6 Inch Undoped GaN Wafer for Power Devices

Premium 2-6 Inch Undoped GaN Wafer for Power Devices

Premium 2-6 Inch Undoped GaN Wafer for Power Devices

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Premium 2-6 Inch Undoped GaN Wafer for Power Devices

US$ 110-350 / piece

25 piece (MOQ)

Hangzhou HCJingRui Technology Co., Ltd.

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Formula: 4h

Standard: GaN-FS-C-U-C50

Port: Shanghai, China

Production Capacity: 50000

Trademark: HC

Origin: China

4"6"8" P R D Grade Silicon Carbide Ingot China Sic Crystal Rod

4"6"8" P R D Grade Silicon Carbide Ingot China Sic Crystal Rod

4"6"8" P R D Grade Silicon Carbide Ingot China Sic Crystal Rod

4"6"8" P R D Grade Silicon Carbide Ingot China Sic Crystal Rod

4"6"8" P R D Grade Silicon Carbide Ingot China Sic Crystal Rod

4"6"8" P R D Grade Silicon Carbide Ingot China Sic Crystal Rod

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4"6"8" P R D Grade Silicon Carbide Ingot China Sic Crystal Rod

US$ 110-119 / mm

15 mm (MOQ)

Hangzhou HCJingRui Technology Co., Ltd.

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Certification: RoHS

Poly Type: 4h

Diameter: 150 ±0.25 mm

Dopant: N-Type Nitrogen

Resistivity: 0.015~0.028 Ohm.Cm

Standard: 4 "6" 8"

Sapphire Crystal Ingot Semiconductor Material

Sapphire Crystal Ingot Semiconductor Material

Sapphire Crystal Ingot Semiconductor Material

Sapphire Crystal Ingot Semiconductor Material

Sapphire Crystal Ingot Semiconductor Material

Sapphire Crystal Ingot Semiconductor Material

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Sapphire Crystal Ingot Semiconductor Material

US$ 150-850 / Inch

2 Inch (MOQ)

Hangzhou HCJingRui Technology Co., Ltd.

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Application: Detector, Diode, LCD Display Controller, Power Electronic Components, Television, Temperature Measurement, Single Crystal Substrate Material

Batch Number: 2024

Material: Sapphire

Model: LED

Type: Intrinsic Semiconductor

Polishing: Single or Double Sided

6-Inch Ultra-P Grade N-Type Sic Wafer Sic Substrate

6-Inch Ultra-P Grade N-Type Sic Wafer Sic Substrate

6-Inch Ultra-P Grade N-Type Sic Wafer Sic Substrate

6-Inch Ultra-P Grade N-Type Sic Wafer Sic Substrate

6-Inch Ultra-P Grade N-Type Sic Wafer Sic Substrate

6-Inch Ultra-P Grade N-Type Sic Wafer Sic Substrate

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6-Inch Ultra-P Grade N-Type Sic Wafer Sic Substrate

US$ 600-660 / piece

3 piece (MOQ)

Hangzhou HCJingRui Technology Co., Ltd.

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Certification: CCC, CE, RoHS

Diameter: 150 ±0.25 mm

Resistivity: 0.016~0.024ohm ·cm

Dopant: N-Type Nitrogen

Ttv: ≤5μm

Warp: ≤20μm

Semiconductor 6 Inch High Purity Semi-Insulating Sic Substrate Sic Wafer

Semiconductor 6 Inch High Purity Semi-Insulating Sic Substrate Sic Wafer

Semiconductor 6 Inch High Purity Semi-Insulating Sic Substrate Sic Wafer

Semiconductor 6 Inch High Purity Semi-Insulating Sic Substrate Sic Wafer

Semiconductor 6 Inch High Purity Semi-Insulating Sic Substrate Sic Wafer

Semiconductor 6 Inch High Purity Semi-Insulating Sic Substrate Sic Wafer

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Semiconductor 6 Inch High Purity Semi-Insulating Sic Substrate Sic Wafer

US$ 1130-1250 / piece

5 piece (MOQ)

Hangzhou HCJingRui Technology Co., Ltd.

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Certification: RoHS

Type: Hpsi

Surface Orientation on-Axis: <0001>

Ttv: ≤5μm

Ltv: ≤3μm(10mm*10mm)

Metal Impurities: ≤5e12atoms/Cm2

4 Inch P Grade High Purity Semi-Insulating Sic Substrate Sic Wafer

4 Inch P Grade High Purity Semi-Insulating Sic Substrate Sic Wafer

4 Inch P Grade High Purity Semi-Insulating Sic Substrate Sic Wafer

4 Inch P Grade High Purity Semi-Insulating Sic Substrate Sic Wafer

4 Inch P Grade High Purity Semi-Insulating Sic Substrate Sic Wafer

4 Inch P Grade High Purity Semi-Insulating Sic Substrate Sic Wafer

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4 Inch P Grade High Purity Semi-Insulating Sic Substrate Sic Wafer

US$ 589-685 / piece

5 piece (MOQ)

Hangzhou HCJingRui Technology Co., Ltd.

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Application: Diode, Power Electronic Components

Certification: CCC, RoHS

Manufacturing Technology: Pvt

Material: 6n Sic Powder

Model: N-Type

Package: Epi-Ready with Vacuum Packaging

Research Grade 6inch N Type Silicon Carbide Wafer Sic Wafer China

Research Grade 6inch N Type Silicon Carbide Wafer Sic Wafer China

Research Grade 6inch N Type Silicon Carbide Wafer Sic Wafer China

Research Grade 6inch N Type Silicon Carbide Wafer Sic Wafer China

Research Grade 6inch N Type Silicon Carbide Wafer Sic Wafer China

Research Grade 6inch N Type Silicon Carbide Wafer Sic Wafer China

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Research Grade 6inch N Type Silicon Carbide Wafer Sic Wafer China

US$ 249-345 / piece

3 piece (MOQ)

Hangzhou HCJingRui Technology Co., Ltd.

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Standard: Purity>99.9999%

Port: Shanghai, China

Production Capacity: 50000

Origin: China

Customizable 4h N-Type Silicon Carbide Cutting Wafers China

Customizable 4h N-Type Silicon Carbide Cutting Wafers China

Customizable 4h N-Type Silicon Carbide Cutting Wafers China

Customizable 4h N-Type Silicon Carbide Cutting Wafers China

Customizable 4h N-Type Silicon Carbide Cutting Wafers China

Customizable 4h N-Type Silicon Carbide Cutting Wafers China

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Customizable 4h N-Type Silicon Carbide Cutting Wafers China

US$ 110-135 / piece

10 piece (MOQ)

Hangzhou HCJingRui Technology Co., Ltd.

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Application: Diode, Power Electronic Components

Standard: Purity>99.9999%

Port: Shanghai, China

Production Capacity: 50000

Origin: China

HS Code: 2804611900

2-Inch Free-Standing GaN Wafer (silicon doped)

2-Inch Free-Standing GaN Wafer (silicon doped)

2-Inch Free-Standing GaN Wafer (silicon doped)

2-Inch Free-Standing GaN Wafer (silicon doped)

2-Inch Free-Standing GaN Wafer (silicon doped)

2-Inch Free-Standing GaN Wafer (silicon doped)

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2-Inch Free-Standing GaN Wafer (silicon doped)

US$ 10-30 / piece

10 piece (MOQ)

Hangzhou HCJingRui Technology Co., Ltd.

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Formula: 4h

Size: Ф 50.8 ± 1 mm

Thickness: 350 ± 25 μm

Resistivity 300K: < 0.5 Ω*Cm

Standard: GaN-FS-C-U-C50

Port: Shanghai, China

6-Inch P-Grade Sic Wafer Sic Substrate MOS&Sbd

6-Inch P-Grade Sic Wafer Sic Substrate MOS&Sbd

6-Inch P-Grade Sic Wafer Sic Substrate MOS&Sbd

6-Inch P-Grade Sic Wafer Sic Substrate MOS&Sbd

6-Inch P-Grade Sic Wafer Sic Substrate MOS&Sbd

6-Inch P-Grade Sic Wafer Sic Substrate MOS&Sbd

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6-Inch P-Grade Sic Wafer Sic Substrate MOS&Sbd

US$ 349-390 / piece

10 piece (MOQ)

Hangzhou HCJingRui Technology Co., Ltd.

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Application: Diode, Power Electronic Components

Certification: RoHS

Manufacturing Technology: Pvt

Material: 6n Sic Powder

Model: 4h

Package: Epi-Ready with Vacuum Packaging

4"6inch Silicon Carbide Rod Sic Semi-Insulated Sic Ingot

4"6inch Silicon Carbide Rod Sic Semi-Insulated Sic Ingot

4"6inch Silicon Carbide Rod Sic Semi-Insulated Sic Ingot

4"6inch Silicon Carbide Rod Sic Semi-Insulated Sic Ingot

4"6inch Silicon Carbide Rod Sic Semi-Insulated Sic Ingot

4"6inch Silicon Carbide Rod Sic Semi-Insulated Sic Ingot

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4"6inch Silicon Carbide Rod Sic Semi-Insulated Sic Ingot

US$ 110-119 / mm

10 mm (MOQ)

Hangzhou HCJingRui Technology Co., Ltd.

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Certification: RoHS

Poly Type: 4h

Diameter: 150 ±0.25 mm

Thickness: ≥10mm

Standard: 4 "6" 8"

Port: Shanghai, China

6 Inch P Grade Silicon Carbide Wafer Sic Wafer MOS Sbd

6 Inch P Grade Silicon Carbide Wafer Sic Wafer MOS Sbd

6 Inch P Grade Silicon Carbide Wafer Sic Wafer MOS Sbd

6 Inch P Grade Silicon Carbide Wafer Sic Wafer MOS Sbd

6 Inch P Grade Silicon Carbide Wafer Sic Wafer MOS Sbd

6 Inch P Grade Silicon Carbide Wafer Sic Wafer MOS Sbd

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6 Inch P Grade Silicon Carbide Wafer Sic Wafer MOS Sbd

US$ 349-390 / piece

10 piece (MOQ)

Hangzhou HCJingRui Technology Co., Ltd.

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Application: Diode, Power Electronic Components

Certification: RoHS

Manufacturing Technology: Pvt

Material: 6n Sic Powder

Model: 4h

Package: Epi-Ready with Vacuum Packaging

4-8 Inch Silicon Carbide Rods, Silicon Carbide Semi-Insulating Ingots

4-8 Inch Silicon Carbide Rods, Silicon Carbide Semi-Insulating Ingots

4-8 Inch Silicon Carbide Rods, Silicon Carbide Semi-Insulating Ingots

4-8 Inch Silicon Carbide Rods, Silicon Carbide Semi-Insulating Ingots

4-8 Inch Silicon Carbide Rods, Silicon Carbide Semi-Insulating Ingots

4-8 Inch Silicon Carbide Rods, Silicon Carbide Semi-Insulating Ingots

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4-8 Inch Silicon Carbide Rods, Silicon Carbide Semi-Insulating Ingots

US$ 110-119 / mm

10 mm (MOQ)

Hangzhou HCJingRui Technology Co., Ltd.

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Certification: RoHS

Material: Power Semiconductor

Model: Single Crystal Substrate Material

Type: N-Type Semiconductor

Poly Type: 4h

Diameter: 150 ±0.25 mm

2-Inch Self-Supporting GaN Wafer (undoped)

2-Inch Self-Supporting GaN Wafer (undoped)

2-Inch Self-Supporting GaN Wafer (undoped)

2-Inch Self-Supporting GaN Wafer (undoped)

2-Inch Self-Supporting GaN Wafer (undoped)

2-Inch Self-Supporting GaN Wafer (undoped)

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2-Inch Self-Supporting GaN Wafer (undoped)

US$ 10-30 / piece

10 piece (MOQ)

Hangzhou HCJingRui Technology Co., Ltd.

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Size: Ф 50.8 ± 1 mm

Thickness: 350 ± 25 μm

Resistivity 300K: < 0.5 Ω*Cm

Ttv: ≤ 15 μm

Standard: GaN-FS-C-U-C50

Port: Shanghai, China

Professional Manufacture Well-Designed New Custom Silicon Carbide Epitaxial Wafer

Professional Manufacture Well-Designed New Custom Silicon Carbide Epitaxial Wafer

Professional Manufacture Well-Designed New Custom Silicon Carbide Epitaxial Wafer

Professional Manufacture Well-Designed New Custom Silicon Carbide Epitaxial Wafer

Professional Manufacture Well-Designed New Custom Silicon Carbide Epitaxial Wafer

Professional Manufacture Well-Designed New Custom Silicon Carbide Epitaxial Wafer

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Professional Manufacture Well-Designed New Custom Silicon Carbide Epitaxial Wafer

US$ 385-460 / piece

3 piece (MOQ)

Hangzhou HCJingRui Technology Co., Ltd.

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Epitaxial Layer Thickness: Less Than 0.5%

Epitaxial Layer Carrier Concentration: Less Than 1.5%

Bipolar Device Level: N-Doped (N-Type) or Al-Doped (P-Type) Epitaxial Wa

Thick Film Epitaxial Wafer: 30~200um

Epitaxial Wafer Type: Sbd-Level, Mosfet Level

Standard: 6Inch

China Quality Research Grade 6-Inch Silicon Carbide Wafer

China Quality Research Grade 6-Inch Silicon Carbide Wafer

China Quality Research Grade 6-Inch Silicon Carbide Wafer

China Quality Research Grade 6-Inch Silicon Carbide Wafer

China Quality Research Grade 6-Inch Silicon Carbide Wafer

China Quality Research Grade 6-Inch Silicon Carbide Wafer

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China Quality Research Grade 6-Inch Silicon Carbide Wafer

US$ 249-345 / piece

3 piece (MOQ)

Hangzhou HCJingRui Technology Co., Ltd.

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Standard: Purity>99.9999%

Port: Shanghai, China

Production Capacity: 50000

Trademark: HC

Origin: China

HS Code: 2849200000

Advanced 6h P-Type 3c N-Type Silicon Carbide Wafer for Semiconductor Applications

Advanced 6h P-Type 3c N-Type Silicon Carbide Wafer for Semiconductor Applications

Advanced 6h P-Type 3c N-Type Silicon Carbide Wafer for Semiconductor Applications

Advanced 6h P-Type 3c N-Type Silicon Carbide Wafer for Semiconductor Applications

Advanced 6h P-Type 3c N-Type Silicon Carbide Wafer for Semiconductor Applications

Advanced 6h P-Type 3c N-Type Silicon Carbide Wafer for Semiconductor Applications

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Advanced 6h P-Type 3c N-Type Silicon Carbide Wafer for Semiconductor Applications

US$ 2180-2300 / piece

3 piece (MOQ)

Hangzhou HCJingRui Technology Co., Ltd.

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Application: Diode, Power Electronic Components

Batch Number: 2023+

Certification: CCC, CE, RoHS

Manufacturing Technology: Pvt

Material: 3c-Sic Powder

Diameter: 6inch

2-Inch Self-Supporting GaN Wafer (silicon doped)

2-Inch Self-Supporting GaN Wafer (silicon doped)

2-Inch Self-Supporting GaN Wafer (silicon doped)

2-Inch Self-Supporting GaN Wafer (silicon doped)

2-Inch Self-Supporting GaN Wafer (silicon doped)

2-Inch Self-Supporting GaN Wafer (silicon doped)

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2-Inch Self-Supporting GaN Wafer (silicon doped)

US$ 10-30 / piece

10 piece (MOQ)

Hangzhou HCJingRui Technology Co., Ltd.

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Formula: 4h

Size: Ф 50.8 ± 1 mm

Thickness: 350 ± 25 μm

Resistivity 300K: < 0.5 Ω*Cm

Standard: GaN-FS-C-U-C50

Port: Shanghai, China

2 Inch Sic Silicon Carbide Wafer Dummy Grade

2 Inch Sic Silicon Carbide Wafer Dummy Grade

2 Inch Sic Silicon Carbide Wafer Dummy Grade

2 Inch Sic Silicon Carbide Wafer Dummy Grade

2 Inch Sic Silicon Carbide Wafer Dummy Grade

2 Inch Sic Silicon Carbide Wafer Dummy Grade

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2 Inch Sic Silicon Carbide Wafer Dummy Grade

US$ 8-10 / piece

25 piece (MOQ)

Hangzhou HCJingRui Technology Co., Ltd.

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Certification: RoHS

Color: Green

Diameter: 6inch

Hickness: 350±25μm

Poly Type: 4h

Ttv: ≤20 μm

High-Quality Sic Ingots and Rods in Various Sizes and Grades

High-Quality Sic Ingots and Rods in Various Sizes and Grades

High-Quality Sic Ingots and Rods in Various Sizes and Grades

High-Quality Sic Ingots and Rods in Various Sizes and Grades

High-Quality Sic Ingots and Rods in Various Sizes and Grades

High-Quality Sic Ingots and Rods in Various Sizes and Grades

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High-Quality Sic Ingots and Rods in Various Sizes and Grades

US$ 110-119 / mm

15 mm (MOQ)

Hangzhou HCJingRui Technology Co., Ltd.

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Certification: RoHS

Poly Type: 4h

Diameter: 150 ±0.25 mm

Dopant: N-Type Nitrogen

Resistivity: 0.015~0.028 Ohm.Cm

Standard: 4 "6" 8"

6n Sic Powder 8-20mesh Crystal Gowth Green Sic Powder for Semicondoctor

6n Sic Powder 8-20mesh Crystal Gowth Green Sic Powder for Semicondoctor

6n Sic Powder 8-20mesh Crystal Gowth Green Sic Powder for Semicondoctor

6n Sic Powder 8-20mesh Crystal Gowth Green Sic Powder for Semicondoctor

6n Sic Powder 8-20mesh Crystal Gowth Green Sic Powder for Semicondoctor

6n Sic Powder 8-20mesh Crystal Gowth Green Sic Powder for Semicondoctor

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6n Sic Powder 8-20mesh Crystal Gowth Green Sic Powder for Semicondoctor

US$ 170-195 / kg

10 kg (MOQ)

Hangzhou HCJingRui Technology Co., Ltd.

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Certification: REACH

Function: Crystal Gowth

Color: Green

Purity: 6n

Type: N-Type 3c-Sic

Customization: Support Customization

6inch Dummy Grade 4h N Type Silicon Carbide Wafer Semiconductor

6inch Dummy Grade 4h N Type Silicon Carbide Wafer Semiconductor

6inch Dummy Grade 4h N Type Silicon Carbide Wafer Semiconductor

6inch Dummy Grade 4h N Type Silicon Carbide Wafer Semiconductor

6inch Dummy Grade 4h N Type Silicon Carbide Wafer Semiconductor

6inch Dummy Grade 4h N Type Silicon Carbide Wafer Semiconductor

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6inch Dummy Grade 4h N Type Silicon Carbide Wafer Semiconductor

US$ 109-139 / piece

5 piece (MOQ)

Hangzhou HCJingRui Technology Co., Ltd.

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Certification: CCC, CE, RoHS

Diameter: 6inch

Hickness: 350±25μm

Poly Type: 4h

Ttv: ≤20 μm

Warp: ≤70μm

6inch Ultra-P Grade 4h N Type Silicon Carbide Wafer Sic Wafer

6inch Ultra-P Grade 4h N Type Silicon Carbide Wafer Sic Wafer

6inch Ultra-P Grade 4h N Type Silicon Carbide Wafer Sic Wafer

6inch Ultra-P Grade 4h N Type Silicon Carbide Wafer Sic Wafer

6inch Ultra-P Grade 4h N Type Silicon Carbide Wafer Sic Wafer

6inch Ultra-P Grade 4h N Type Silicon Carbide Wafer Sic Wafer

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6inch Ultra-P Grade 4h N Type Silicon Carbide Wafer Sic Wafer

US$ 600-660 / piece

3 piece (MOQ)

Hangzhou HCJingRui Technology Co., Ltd.

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Certification: CCC, CE, RoHS

Diameter: 150 ±0.25 mm

Resistivity: 0.016~0.024ohm ·cm

Dopant: N-Type Nitrogen

Ttv: ≤5μm

Warp: ≤20μm

Questions & Answers on Hangzhou HCJingRui

How can I identify reputable suppliers for N-type Semiconductors in China?

The Hangzhou HCJingRui is a key item within our extensive N-type Semiconductor selection.Identifying reputable suppliers involves researching company backgrounds, validating certifications, and requesting product samples for quality testing. Look for established partnerships, transparent communications, and adherence to industry standards to ensure a reliable supply chain.

What advantages does wholesale purchase of N-type Semiconductors offer?

Our Hangzhou HCJingRui offers exceptional quality and style within the N-type Semiconductor category.Buyers gain cost efficiencies through bulk purchasing of N-type Semiconductors, benefiting from discounted prices and scale of production. Wholesale transactions also provide flexibility in meeting specific demands and enable customization opportunities for tailored semiconductor solutions.

What are the typical characteristics of N-type Semiconductors?

Discover the perfect addition to your N-type Semiconductor with our Hangzhou HCJingRui.N-type Semiconductors are known for their high electron mobility and increased electrical conductivity compared to other semiconductors. These unique properties make them valuable in various electronic applications, providing efficiency and dependability in circuit design.

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