Cny17g Series Semiconductors Optocoupler Phototransistor Output with Base Connection

CNY17G Semiconductors
Optocoupler, Phototransistor Output, no Base Connection

DESCRIPTION
The CNY17G consists of a phototransistor optically coupled
to a gallium arsenide infrared-emitting diode in a 6 pin plastic
dual inline package.

AGENCY APPROVALS
• UL1577, file no. E52744, double protection
• BSI: BS EN 60065, BS EN 60950-1
• DIN EN 60747-5-5 (VDE 0884)
• FIMKO (SETI): EN 60950, certificate no. FI25155

FEATURES
• Isolation materials according to UL94V-O
• Pollution degree 2 (DIN/VDE 0110 part 1 resp.
IEC 60664)
• Climatic classification 55/110/21 (IEC 60068
part 1)
• Special construction: therefore, extra low
coupling capacity of typical 0.3 pF, high common
mode rejection
• Low temperature coefficient of CTR
• Rated impulse voltage (transient overvoltage)
VIOTM = 6 kV peak
• Isolation test voltage (partial discharge test voltage)
Vpd = 1.6 kV
• Rated isolation voltage VIORM = 850 VRMS
• Thickness through insulation = 0.4 mm
• Creepage current resistance according to VDE 0303/
IEC 60112 comparative tracking index: CTI = 275
• CTR offered in 4 groups
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC

APPLICATIONS
• Switch-mode power supplies
• Line receiver
• Computer peripheral interface
• Microprocessor system interface
• Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
- for appl. class I - IV at mains voltage ≤ 300 V
- for appl. class I - III at mains voltage ≤ 600 V
according to DIN EN 60747-5-5 (VDE 0884)

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