Transistors
US$0.60-0.80 / Piece
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What is Insulated Gate Bipolar Transistor, 40A 1200V IGBT

About this Item
Details
Company Profile

Price

Min. Order Reference FOB Price

240 Pieces US$0.60-0.80 / Piece

Sepcifications

  • Function Power Triode, IGBT
  • Origin China
  • Product Number Ihw20n120r3
  • Configuration Single with Built-in Diode
  • Shipping by DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post
  • Gate-Emitter Thr Voltage-Max 6.4V
  • Collector-Emitter Voltage-Max 1200V
  • Subcategory Insulated Gate Bip Transistors
  • Description IGBT 1200V 40A 310W
  • Power Dissipation-Max (ABS) 310W
  • Transistor Application Power Control
  • Detailed Description IGBT Trench Through Hole
  • Product Category IGBT Transistors
  • Continuous Collector Current at 25 C 40 a
  • Packaging Tube
  • Gate-Emitter Leakage Current 100 Na
  • Minimum Operating Temperature - 40 C

Product Description

Product Paramenters Category Discrete Semiconductor Products Transistors - IGBTs - Single Package Tube IGBT Type Trench Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 20A Switching Energy 950µJ (off) Input Type Standard Td (on/off) @ 25°C -/387ns Test Condition 600V, 20A, 15Ohm, 15V ...

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Transaction Info
Price US $ 0.60-0.80/ Piece US $ 2,000.00-3,000.00/ Piece US $ 2,000.00-3,000.00/ Piece Negotiable Negotiable
Min Order 240 Pieces 1 Pieces 1 Pieces 1 Pieces 1 Pieces
Trade Terms FOB FOB, CIF, EXW FOB, CIF, EXW FOB, CIF, EXW FOB, CIF, EXW
Payment Terms L/C, T/T, D/P, Western Union, Paypal T/T, Western Union, Paypal T/T, Western Union, Paypal L/C, T/T, Paypal T/T, Western Union, Paypal
Quality Control
Management System Certification - - - - -
Trade Capacity
Export Markets South America, Europe, Southeast Asia/ Mideast, Others North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue - > US $100 Million > US $100 Million > US $100 Million > US $100 Million
Business Model - OEM, ODM OEM, ODM OEM, ODM OEM, ODM
Average Lead Time Off-season: within 15 Day(s)
Peak-season: within 15 Day(s)
Off-season: within 15 Day(s)
Peak-season: 1 Month(s)
Off-season: within 15 Day(s)
Peak-season: 1 Month(s)
Off-season: within 15 Day(s)
Peak-season: 1 Month(s)
Off-season: within 15 Day(s)
Peak-season: 1 Month(s)
Product Attributes
Specification
Function: Power Triode, IGBT;
Product Number: Ihw20n120r3;
Configuration: Single with Built-in Diode;
Shipping by: DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post;
Gate-Emitter Thr Voltage-Max: 6.4V;
Collector-Emitter Voltage-Max: 1200V;
Subcategory: Insulated Gate Bip Transistors;
Description: IGBT 1200V 40A 310W;
Power Dissipation-Max (ABS): 310W;
Transistor Application: Power Control;
Detailed Description: IGBT Trench Through Hole;
Product Category: IGBT Transistors;
Continuous Collector Current at 25 C: 40 a;
Packaging: Tube;
Gate-Emitter Leakage Current: 100 Na;
Minimum Operating Temperature: - 40 C;
Encapsulation Structure: Foam Packing;
Installation: Vertical;
Working Frequency: High Frequency;
Power Level: High Power;
Function: Power Triode;
Material: Metal Ceramic;
Filament Voltage: 8V;
Filament Current: 185A;
Amplifcation Factor: 20;
Power: 60kw;
Working Position: Vertical;
Max Height: 283mm;
Max Diameter: 196mm;
Max Weight: 13kg;
Cooling: Forced Air;
Encapsulation Structure: Other;
Installation: Vertical;
Working Frequency: High Frequency;
Power Level: High Power;
Function: Power Triode;
Material: Metal Ceramic;
Filament Voltage: 8V;
Filament Current: 185A;
Amplifcation Factor: 20;
Power: 60kw;
Working Position: Vertical;
Max Height: 283mm;
Max Diameter: 196mm;
Max Weight: 13kg;
Cooling: Forced Air;
Type: Triode;
Encapsulation Structure: Other;
Working Frequency: High Frequency;
Power Level: High Power;
Function: Power Triode;
Material: Metal Ceramic;
Filament Voltage: 5.8V;
Filament Current: 145A;
Amplifcation Factor: 220;
Power: 30kw;
Working Position: Vertical;
Max Height: 248mm;
Max Diameter: 155.5mm;
Max Weight: 3.1kg;
Cooling: Water;
Encapsulation Structure: Other;
Working Frequency: High Frequency;
Power Level: High Power;
Function: Power Triode;
Material: Metal Ceramic;
Filament Voltage: 5.8V;
Filament Current: 145A;
Amplifcation Factor: 220;
Power: 30kw;
Working Position: Vertical;
Max Height: 248mm;
Max Diameter: 155.5mm;
Max Weight: 3.1kg;
Cooling: Water;
Supplier Name

Shenzhen Jin Da Peng Technology Co., Ltd.

China Supplier - Diamond Member Audited Supplier

Ningbo Setec Electron Co., Ltd.

China Supplier - Gold Member Audited Supplier

Ningbo Setec Electron Co., Ltd.

China Supplier - Gold Member Audited Supplier

Ningbo Setec Electron Co., Ltd.

China Supplier - Gold Member Audited Supplier

Ningbo Setec Electron Co., Ltd.

China Supplier - Gold Member Audited Supplier