N-Channel Enhancement Mode Field Effect Transistor, VDSS: 650V, ID: 8A, PD: 104W, fetures, applications, TO-252, YJD08C65HJ pictures & photos

N-Channel Enhancement Mode Field Effect Transistor, VDSS: 650V, ID: 8A, PD: 104W, fetures, applications, TO-252, YJD08C65HJ

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Price

Min. Order Reference FOB Price

1,000 Pieces US$0.75 / Piece

Sepcifications

Certification RoHS
Function Switch Transistor
Encapsulation Structure TO-252
Material Silicon
Transport Package Plastic Package
Specification Customized
Trademark MR
Origin Guangdong, China
Features1 Extremely Low Switching Loss
Features2 Excellent Stability and Uniformity
Features3 100% Avalanche Tested
Features4 Built-in ESD Diode
Application1 Switch Mode Power Supply (SMPS)
Application2 Power Factor Correction (Pfc)
Application3 Uninterruptible Power Supply (UPS)
Application4 AC to DC Converters
Application5 Telecom
Application6 TV Power & LED Lighting Power

Product Description

N-Channel Enhancement Mode Field Effect Transistor, VDSS: 650V, ID: 8A, PD: 104W, fetures, applications, TO-252, YJD08C65HJ Features : - VDS : 650V - ID : 8A - RDS(ON)( at VGS=10V) : <580Ω - 100% EAS Tested - 100% ▽VDS Tested General Description : - Super Junction High ...

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Dongguan Merry Electronic Co., Ltd.

Diamond Member Since 2021

Audited Supplier

Rating & Reviews: 5.0/5.0

(7 Reviews)

Business Type Manufacturer/Factory
Business Range Consumer Electronics, Electrical & Electronics, Light Industry & Daily Use, Lights & Lighting
Main Products Diode, Transistor, Mosfet, Bridge, IC, Integrated Circuits, Microcontroller, Schottky Diodes, Super Junction Mosfets, Tvs ESD Protection
Type of Ownership Limited Company
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays

High Voltage Diode 500kv Comparison

	N-Channel Enhancement Mode Field Effect Transistor, VDSS: 650V, ID: 8A, PD: 104W, fetures, applications, TO-252, YJD08C65HJ Contact Now	Quick View N-Channel 400 V 10A 147W Mosfet Transistor DIP Sihp10n40d-Ge3 Contact Now	Quick View Original 40t120fes 40A1200V High Speed Fieldstop Trench IGBT Mbq40t120fes Mbq40t120festh to-247 Contact Now	Quick View Ikq120n60t Transistor IGBT Trench Field Stop 120n60 Contact Now	Quick View Ao3424_102 Discrete Semiconductor Productstransistors - Fets, Mosfets - Single Mosfet N-CH 30V Sot23 Contact Now

Transaction Info
	N-Channel Enhancement Mode Field Effect Transistor, VDSS: 650V, ID: 8A, PD: 104W, fetures, applications, TO-252, YJD08C65HJ Contact Now	Quick View N-Channel 400 V 10A 147W Mosfet Transistor DIP Sihp10n40d-Ge3 Contact Now	Quick View Original 40t120fes 40A1200V High Speed Fieldstop Trench IGBT Mbq40t120fes Mbq40t120festh to-247 Contact Now	Quick View Ikq120n60t Transistor IGBT Trench Field Stop 120n60 Contact Now	Quick View Ao3424_102 Discrete Semiconductor Productstransistors - Fets, Mosfets - Single Mosfet N-CH 30V Sot23 Contact Now
Price	US$0.75 / Piece	US$0.01 - 1.00 / Piece	US$2.00 / Piece	US$7.20 / Piece	US$0.10 / Piece
Min Order	1,000 Pieces	1 Piece	100 Pieces	1 Piece	10 Pieces
Payment Terms	LC, T/T	LC, T/T	LC, T/T	LC, T/T	LC, T/T
Quality Control
Product Certification	RoHS	-	-	RoHS	-
Management System Certification	-	-	-	-	-
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea), Australia	North America, South America, Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea), Australia	North America, South America, Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea), Australia	North America, South America, Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea), Australia
Annual Export Revenue	-	-	-	-	-
Business Model	-	Own Brand, ODM	Own Brand, ODM	Own Brand, ODM	Own Brand, ODM
Average Lead Time	Peak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays	Peak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays	Peak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays	Peak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays	Peak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays
Product Attributes
Specification	Function: Switch Transistor; Encapsulation Structure: TO-252; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application2: Power Factor Correction (Pfc); Application3: Uninterruptible Power Supply (UPS); Application4: AC to DC Converters; Application5: Telecom; Application6: TV Power & LED Lighting Power;	Encapsulation Structure: DIP; Fet Type: N-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 400 V; Continuous Drain (ID) @ 25°c: 10A (Tc); Drive Voltage (Max RDS on, Min RDS on): 10V; RDS on (Max) @ ID, Vgs: 600mohm @ 5A, 10V; Vgs(Th) (Max) @ ID: 5V @ 250µa; Gate Charge (Qg) (Max) @ Vgs: 30 Nc @ 10 V; Vgs (Max): ±30V; Input Capacitance (CISS) (Max) @ Vds: 526 PF @ 100 V; Power Dissipation (Max): 147W (Tc); Operating Temperature: -55°c ~ 150°c (Tj); Mounting Type: Surface Mount; Supplier Device Package: to-220ab; Package / Case: to-220-3;	Shape: DIP; Colleclor-Emitter Voltage: 1200V; Gate-Emitter Voltage: ±20V; Pulsed Collectorcurrent,Pulse Time Limit: 160A; Lead Time: in Stock;	Cooling Method: Naturally Cooled Tube; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon; IGBT Type: Trench Field Stop; Voltage - Collector Emitter Breakdown (M: 600 V; Current - Collector (IC) (Max): 160 a; Current - Collector Pulsed (Icm): 480 a; Vce(on) (Max) @ Vge, IC: 2V @ 15V, 120A; Power - Max: 833 W; Switching Energy: 6.2mj (on), 5.9mj (off); Input Type: Standard; Gate Charge: 703 Nc; Td (on/off) @ 25°c: 50ns/565ns; Test Condition: 400V, 120A, 3ohm, 15V; Reverse Recovery Time (Trr): 241 Ns; Operating Temperature: -40°c ~ 175°c (Tj); Mounting Type: Through Hole; Package / Case: to-247-3;	Shape: DIP/SMD; Conductive Type: N/a; Integration: N/a; Technics: N/a;
Supplier Name	Dongguan Merry Electronic Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.
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