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Original 40t120fes 40A1200V High Speed Fieldstop Trench IGBT Mbq40t120fes Mbq40t120festh to-247 pictures & photos

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What is Original 40t120fes 40A1200V High Speed Fieldstop Trench IGBT Mbq40t120fes Mbq40t120festh to-247

Name: Original 40t120fes 40A1200V High Speed Fieldstop Trench IGBT Mbq40t120fes Mbq40t120festh to-247
Uploaded: 2025-12-06T23:32:15+08:00
Description: Original 40T120FES 40A1200V High speed FieldStop Trench IGBT MBQ40T120FES MBQ40T120FESTH TO-247 Provide bom serice/Contact for more than 100,000 components Characteristics Symbol Rating Unit Colleclor

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About this Item

Price

Min. Order Reference FOB Price

100 Pieces US$2.00 / Piece

Sepcifications

Shape DIP
Transport Package Standard
Specification Standard
Origin China
Colleclor-Emitter Voltage 1200V
Gate-Emitter Voltage ±20V
Pulsed Collectorcurrent,Pulse Time Limit 160A
Lead Time in Stock

Product Description

Original 40T120FES 40A1200V High speed FieldStop Trench IGBT MBQ40T120FES MBQ40T120FESTH TO-247 Provide bom serice/Contact for more than 100,000 components Characteristics Symbol Rating Unit Colleclor-emitter voltage VcEs 1200 V Gate-emitter voltage VcEs ±20 V Collector current ...

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ShenZhen Nova Semiconductor Co., Ltd.

Diamond Member Since 2021

Audited Supplier

Rating & Reviews: 4.9/5.0

(21 Reviews)

Main Products IC, Resistor, Capacitor, Sensor, Transistor, Diode, Triode, Passive Components, Drive IC, ...
Year of Establishment 2010-06-17
Number of Employees 30
Address Room 3005-3006, Building 1, Hengda Metropolitan Plaza, No. 17 Huancheng South Road, Longgang District, Shenzhen, Guangdong, China

Electronic Component Comparison

	Original 40t120fes 40A1200V High Speed Fieldstop Trench IGBT Mbq40t120fes Mbq40t120festh to-247 Contact Now	Quick View Silicon Carbide Schottky Diode VRRM=650V IF=14A QC=30nC fetures applications Zero forward recovery voltage YJD106508BQG2 Contact Now	Quick View Dual NPN Digital Transistors (Built-in Resistors) fetures applications Moisture Sensitivity Level 1 SOT-363 UMH1NQ Contact Now	Quick View NPN Digital Transistors (Built-in Resistors) fetures applications Moisture Sensitivity Level 1 SOT-23 DTC114ECAQ Contact Now	Quick View 100V 192A 4.2mΩ N Channel Mosfet Irf100b201 in to-220 Package Contact Now

Transaction Info
	Original 40t120fes 40A1200V High Speed Fieldstop Trench IGBT Mbq40t120fes Mbq40t120festh to-247 Contact Now	Quick View Silicon Carbide Schottky Diode VRRM=650V IF=14A QC=30nC fetures applications Zero forward recovery voltage YJD106508BQG2 Contact Now	Quick View Dual NPN Digital Transistors (Built-in Resistors) fetures applications Moisture Sensitivity Level 1 SOT-363 UMH1NQ Contact Now	Quick View NPN Digital Transistors (Built-in Resistors) fetures applications Moisture Sensitivity Level 1 SOT-23 DTC114ECAQ Contact Now	Quick View 100V 192A 4.2mΩ N Channel Mosfet Irf100b201 in to-220 Package Contact Now
Price	US$2.00 / Piece	US$0.47 / Piece	US$0.883 / Piece	US$0.896 / Piece	US$0.443 / Piece
Min Order	100 Pieces	30 Pieces	1,000 Pieces	1,000 Pieces	1,000 Pieces
Payment Terms	LC, T/T	LC, T/T	LC, T/T	LC, T/T	-
Quality Control
Product Certification	-	RoHS	RoHS	RoHS	RoHS, CE, ISO, CCC
Management System Certification	-	-	-	-	-
Trade Capacity
Export Markets	North America, South America, Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea), Australia	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand, ODM	-	-	-	-
Average Lead Time	Peak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays	Peak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays	Peak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays	Peak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays	Peak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays
Product Attributes
Specification	Shape: DIP; Colleclor-Emitter Voltage: 1200V; Gate-Emitter Voltage: ±20V; Pulsed Collectorcurrent,Pulse Time Limit: 160A; Lead Time: in Stock;	Function: Switch Transistor; Encapsulation Structure: TO-263; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application2: Power Factor Correction (Pfc); Application3: Uninterruptible Power Supply (UPS); Application4: AC to DC Converters; Application5: Telecom; Application6: TV Power & LED Lighting Power;	Function: Switch Transistor; Encapsulation Structure: SOT-363; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application2: Power Factor Correction (Pfc); Application3: Uninterruptible Power Supply (UPS); Application4: AC to DC Converters; Application5: Telecom; Application6: TV Power & LED Lighting Power;	Function: Switch Transistor; Structure: Alloy; Encapsulation Structure: SOT-23; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application2: Power Factor Correction (Pfc); Application3: Uninterruptible Power Supply (UPS); Application4: AC to DC Converters; Application5: Telecom; Application6: TV Power & LED Lighting Power;	Shape: to-220; Cooling Method: Naturally Cooled Tube; Function: Switch Transistor; Working Frequency: Low Frequency; Structure: N Channel; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Medium Power; Material: Silicon; Features1: Vds (V)=100V; Features2: ID=192A; Features3: RDS(on)<4.2mΩ(Vgs=10V); Features4: 100V N Channel Mosfet;
Supplier Name	ShenZhen Nova Semiconductor Co., Ltd.	Dongguan Merry Electronic Co., Ltd.	Dongguan Merry Electronic Co., Ltd.	Dongguan Merry Electronic Co., Ltd.	Dongguan Meizhao Electronics Co., Ltd.
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