N-Channel 400 V 10A 147W Mosfet Transistor DIP Sihp10n40d-Ge3 Video
Price
Purchase Qty. Reference FOB Price
1-9 Pieces US$1.00
10-99 Pieces US$0.10
100+ Pieces US$0.01
Sepcifications
- Encapsulation Structure DIP
- Transport Package Standard
- Specification Standard
- Trademark Original
- Origin Original
- Fet Type N-Channel
- Technology Mosfet (Metal Oxide)
- Drain to Source Voltage (Vdss) 400 V
- Continuous Drain (ID) @ 25°c 10A (Tc)
- Drive Voltage (Max RDS on, Min RDS on) 10V
- RDS on (Max) @ ID, Vgs 600mohm @ 5A, 10V
- Vgs(Th) (Max) @ ID 5V @ 250µa
- Gate Charge (Qg) (Max) @ Vgs 30 Nc @ 10 V
- Vgs (Max) ±30V
- Input Capacitance (CISS) (Max) @ Vds 526 PF @ 100 V
- Power Dissipation (Max) 147W (Tc)
- Operating Temperature -55°c ~ 150°c (Tj)
- Mounting Type Surface Mount
- Supplier Device Package to-220ab
- Package / Case to-220-3
Product Description
N-Channel 400 V 10A 147W MOSFET TRANSISTOR DIP SIHP10N40D-GE3 Provide Bom services / more than 100,000 types of electronic components TYPE DESCRIPTION Category Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Vishay Siliconix - Tube Part Status Active ...
