Boost Chopper SiC MOSFET 1200V - 55A full Silicon Carbide Power Module Stable temperature ...
Min. Order: 1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: SOT-227
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Dongguan Merry Electronic Co., Ltd.
-
Diamond Member
- Guangdong, China
-
Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS 1200V ID(25°C) 78A RDS(on) ...
Min. Order: 1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: TO-247AB
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Dongguan Merry Electronic Co., Ltd.
-
Diamond Member
- Guangdong, China
-
Silicon Carbide Power MOSFET(N-Channel Enhancement)TO247-4L Fetures Applications ...
Min. Order: 1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: TO-247-4L
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Dongguan Merry Electronic Co., Ltd.
-
Diamond Member
- Guangdong, China
-
Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS 650V ID(25°C) 60A RDS(on) ...
Min. Order: 1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: TO-247AB
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Dongguan Merry Electronic Co., Ltd.
-
Diamond Member
- Guangdong, China
-
High blocking voltage Silicon Carbide Power MOSFET(N-Channel Enhancement) TO-247-4L ...
Min. Order: 1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: TO247-4L
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Dongguan Merry Electronic Co., Ltd.
-
Diamond Member
- Guangdong, China
-
Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS:1200V / ID(25°C):33A / ...
Min. Order: 1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: TO247-AB
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Dongguan Merry Electronic Co., Ltd.
-
Diamond Member
- Guangdong, China
-
Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS:1200V / ID(25°C):38A / ...
Min. Order: 1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: TO247-AB
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Dongguan Merry Electronic Co., Ltd.
-
Diamond Member
- Guangdong, China
-
Silicon Carbide Power MOSFET(N-Channel Enhancement) High blocking voltage TO-247-4L ...
Min. Order: 1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: TO247-4L
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Dongguan Merry Electronic Co., Ltd.
-
Diamond Member
- Guangdong, China
-
Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS:1200V / ID(25°C):33A / ...
Min. Order: 1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: TO247-4L
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Dongguan Merry Electronic Co., Ltd.
-
Diamond Member
- Guangdong, China
-
Silicon Carbide Power MOSFET(N-Channel Enhancement) High speed switching TO-263-7L Fetures ...
Min. Order: 1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: TO-263-7L
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Dongguan Merry Electronic Co., Ltd.
-
Diamond Member
- Guangdong, China
-
Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS 650V ID(25°C) 107A RDS(on) ...
Min. Order: 1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: TO-247AB
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Dongguan Merry Electronic Co., Ltd.
-
Diamond Member
- Guangdong, China
-
Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS:1700V / ID(25°C):55A / ...
Min. Order: 1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: TO247-4L
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Dongguan Merry Electronic Co., Ltd.
-
Diamond Member
- Guangdong, China
-
Silicon Carbide Power MOSFET(N-Channel Enhancement)TO247-4L Fetures Applications ...
Min. Order: 1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Features3: 100% Avalanche Tested
- Dongguan Merry Electronic Co., Ltd.
-
Diamond Member
- Guangdong, China
-
TM2G0040120K Apply To Photovoltaic Inverter 1200V N-Channel Silicon Carbide Power MOSFET
FOB Price: US $1 / Piece
Min. Order: 1000 Pieces
Min. Order: 1000 Pieces
- Certification: RoHS, CE, ISO, CCC
- Shape: GT
- Shielding Type: Remote Cut-Off Shielding Tube
- Cooling Method: Naturally Cooled Tube
- Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor
- Working Frequency: High Frequency
- Dongguan Merry Electronic Co., Ltd.
-
Diamond Member
- Guangdong, China
-
Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS:1200V / ID(25°C):21A / ...
Min. Order: 1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: TO247-4L
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Dongguan Merry Electronic Co., Ltd.
-
Diamond Member
- Guangdong, China
-
Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS 650V ID(25°C) 60A RDS(on) ...
Min. Order: 1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: TO-247AB
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Dongguan Merry Electronic Co., Ltd.
-
Diamond Member
- Guangdong, China
-
High-frequency operation Silicon Carbide Power MOSFET(N-Channel Enhancement) TO-247AB ...
Min. Order: 1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: TO247-AB
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Dongguan Merry Electronic Co., Ltd.
-
Diamond Member
- Guangdong, China
-
Silicon Carbide Power MOSFET(N-Channel Enhancement) High speed switching TO247-4L Fetures ...
Min. Order: 1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: T2PAK
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Dongguan Merry Electronic Co., Ltd.
-
Diamond Member
- Guangdong, China
-
Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS-650V ID(25°C)- 60A ...
Min. Order: 1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: TO-247-4L
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Dongguan Merry Electronic Co., Ltd.
-
Diamond Member
- Guangdong, China
-
Silicon Carbide Power MOSFET(N-Channel Enhancement) High blocking voltage TO-263-7L ...
Min. Order: 1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: TO-263-7L
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Dongguan Merry Electronic Co., Ltd.
-
Diamond Member
- Guangdong, China
-
Silicon Carbide Power MOSFET(N-Channel Enhancement) High blocking voltage TO-247-4L ...
Min. Order: 1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: TO247-4L
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Dongguan Merry Electronic Co., Ltd.
-
Diamond Member
- Guangdong, China
-
TM2G0080120D apply to Photovoltaic Inverter 1200V N-Channel Silicon Carbide Power MOSFET
FOB Price: US $1 / Piece
Min. Order: 1000 Pieces
Min. Order: 1000 Pieces
- Certification: RoHS, CE, ISO, CCC
- Shape: GT
- Shielding Type: Remote Cut-Off Shielding Tube
- Cooling Method: Naturally Cooled Tube
- Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor
- Working Frequency: High Frequency
- Dongguan Merry Electronic Co., Ltd.
-
Diamond Member
- Guangdong, China
-
Silicon Carbide Power MOSFET(N-Channel Enhancement)TO247AB Fetures Applications ...
Min. Order: 1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: TO-247AB
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Dongguan Merry Electronic Co., Ltd.
-
Diamond Member
- Guangdong, China
-
Silicon Carbide Power MOSFET(N-Channel Enhancement) High speed switching TO-247-4L Fetures ...
Min. Order: 1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: TO247-4L
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Dongguan Merry Electronic Co., Ltd.
-
Diamond Member
- Guangdong, China
-
Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS 1200V ID(25°C) 66A RDS(on) ...
Min. Order: 1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: TO-247AB
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Dongguan Merry Electronic Co., Ltd.
-
Diamond Member
- Guangdong, China
-
Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS 1200V ID(25°C) 24A RDS(on) ...
Min. Order: 1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: TO-247AB
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Dongguan Merry Electronic Co., Ltd.
-
Diamond Member
- Guangdong, China
-
Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS:1200V / ID(25°C):21A / ...
Min. Order: 1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: TO247-AB
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Dongguan Merry Electronic Co., Ltd.
-
Diamond Member
- Guangdong, China
-
Silicon Carbide Power MOSFET(N-Channel Enhancement) High-frequency operation TO-247-4L ...
Min. Order: 1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: TO247-4L
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Dongguan Merry Electronic Co., Ltd.
-
Diamond Member
- Guangdong, China
-
Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS-1700V / ID)25°C)- 4.2A / ...
Min. Order: 1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: TO247-4L
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Dongguan Merry Electronic Co., Ltd.
-
Diamond Member
- Guangdong, China
-
Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS 1200V ID(25°C) 62A RDS(on) ...
Min. Order: 1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: TO-247AB
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Dongguan Merry Electronic Co., Ltd.
-
Diamond Member
- Guangdong, China
-
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