99.5% Beryllium Oxide Substrate /Beo Ceramic Substrate Manufacturer for High Power Density Requirements of RF Power Transistors--Coraynic Technology Limited

To ensure optimal performance and reliability, sensitive electronics must be adequately protected by secure packaging. Hermetic lids are necessary for semiconductor, MEMS, medical or optical applications to shield devices from moisture. RF and microwave packages must meet the demand for very low thermal resistance and very low RF loss. Metals and alloys used for the joining of vacuum electronic devices must be free of contamination that could negatively impact performance.
CERAMIC PACKAGING RF & microwave packages for very low thermal resistance & RF loss. Complementary packages and lids. BeO Packages.

Our cooperated manufacturer has developed a wide range of ceramic packages to meet your demands for very low thermal resistance. Our products also provide very low RF loss for RF and microwave microelectronics packaging. We can incorporate flanges of advanced materials to achieve the high power density requirements of RF power transistors.

PROVEN PERFORMANCE WITH A VARIETY OF TRANSISTORS
Our high-quality ceramic packages support a wide variety of RF power transistors and MMICS, including transistors fabricated in Si, GaAs, and GaN. All packages are plated with electrolytic nickel and gold to meet the exacting standards of the microelectronics packaging industry.

CERAMIC PACKAGES WITH HIGH RELIABILITY
We manufacture a line of ceramic packages for RF and microwave transistors or fabricate new designs to meet customer requirements for microelectronics packaging. Packages are available in surface mount designs as well as bolt-down versions in dozens of open-tooled designs.

Metallized thick film lithographic substrates on BeO substrates are well suited for high-reliability high-density microwave circuits. These substrates can be Working under conditions above 44 GHz for Tel-communications, live broadcasts, Satellite communication modules, mobile phones, personal communication services, base stations, advanced avionics, and Global Positioning systems (GPS).  Size can be and space scales as small as 0.001 inches, and routinely mounted in 4 x 4 Inches on the substrate. SiC reinforced aluminium metal matrix composites combined with DBC- BeO substrate has been successfully used for high current IGBT (insulated gate bipolar transistor). The design of the module substrate. Al/ SiC material combines high heat Dissipative, low aluminium alloy density and low coefficient of thermal expansion, and BeO The substrate is matched so that the thermal stress at the joint is reduced. BeO ceramics are also widely used in broadband internet and high-power electric vacuum devices such as transmission windows, clamping bars and buck collectors of travelling-wave tubes. Low dielectric constants and losses facilitate good broadband matching and reduce power loss. The high thermal conductivity allows the heat generated in high-power devices to be conducted in a timely manner to ensure the stability and reliability of the device. Compared with Al2O3 windows, BeO ceramics can withstand much larger continuous-wave output power. For example, The BeO window suffers no damage to the output power of 263 kW, while the Al2O3 window breaks at an output power of 100 kW.

Why choose Coraynic Technology
--Sufficient supply
--Completive price
--Excellent performance
--Good service
--Top-quality raw material
--Prompt delivery

Coraynic experienced engineering team can assist with selecting an optimal product for your RF and microwave microelectronics packaging. Contact our engineers for the best solution!