Dummy Sic Ingots Manufacturer for Laser Machine Testing
| Min. Order: | 5 Pieces |
|---|---|
| Port: | Shanghai, China |
| Production Capacity: | 1000000 |
| Payment Terms: | T/T |
Similar Items
Loading...
You May Like
Loading...
Product Description
Company Info
Address:
Lisheng Industrial Building, 60 Suli Road, Suzhou, Jiangsu, China
Business Type:
Manufacturer/Factory
Business Range:
Electrical & Electronics, Industrial Equipment & Components, Manufacturing & Processing Machinery
Company Introduction:
Homray Material Technology was established in 2009, is a high technology company which is specialized in providing Silicon Carbide(SiC) substrate wafer and SiC Epi wafer, Gallium Nitride(GaN) substrate wafer and GaN Epi wafer. It is widely acknowledged that compound Semiconductor (SiC, GaN) with its superior property like wide-bandgap, is expected to the most promising material choice for next generation device. SiC device and GaN devices can achieve low losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Material Technology is committed to developing high quality SiC wafer and GaN wafer for RF, power electronics and opto-electronics applications. As the leading wafer manufacturer and supplier in the semiconductor industry, our dealers and partners are mainly distributed in Europe, USA, Southeast Asia, and South America, our sales value exceeded 50 Million US dollars in 2019. Excellent products quality and professional service won the trust and support from our customers in the world as well as our share of market.
Our products range includes Silicon Carbide(SiC) substrate wafer and SiC Epi wafer, Gallium Nitride(GaN) substrate wafer and GaN Epi wafer, test silicon wafer and dummy silicon wafer. In fact, GaN-on-Si technology has been considered as the best choice of GaN power electronics as it leverages the device performance and the manufacturing cost. The success of GaN epitaxy on large size Si substrates promises a remarkable cost down and a possibility of mass production based on CMOS-compatible technology. Homray Material Technology GaN Epi wafer includes GaN-on-Silicon, GaN-on-SiC, GaN-on-Sapphire Epi wafers with various sizes and different technical parameters. Homray Material Technology HEMT wafers have been optimized with extremely low buffer leakage and low buffer traps, which are the key features for high performance GaN devices. We provide semiconductor products with superior performance and reliability, and are dedicated to become the world′s leading company in the booming wide-bandgap semiconductor industry.
Our products range includes Silicon Carbide(SiC) substrate wafer and SiC Epi wafer, Gallium Nitride(GaN) substrate wafer and GaN Epi wafer, test silicon wafer and dummy silicon wafer. In fact, GaN-on-Si technology has been considered as the best choice of GaN power electronics as it leverages the device performance and the manufacturing cost. The success of GaN epitaxy on large size Si substrates promises a remarkable cost down and a possibility of mass production based on CMOS-compatible technology. Homray Material Technology GaN Epi wafer includes GaN-on-Silicon, GaN-on-SiC, GaN-on-Sapphire Epi wafers with various sizes and different technical parameters. Homray Material Technology HEMT wafers have been optimized with extremely low buffer leakage and low buffer traps, which are the key features for high performance GaN devices. We provide semiconductor products with superior performance and reliability, and are dedicated to become the world′s leading company in the booming wide-bandgap semiconductor industry.
){kind=link}