Basic Info.
Production Process
Integration
Specification
CE, UL, 9001
Product Description
Features:
Open loop Principle
output voltage Signals
Single Power Supply +5V
Isolation Voltage 3kV
Low Power Consumption
PCB mounting platform
Factory calibrated
Advantages:
High accuracy
Low Insertion Loss
Compact disign
High Creepage distance
High immunity to external interference
Strong insulation isolation
Low temperature coefficient
Appications:
Servo moto drives
Battery supplied application
UPS
SMPS
Power supplies go weiding applicaiton
AC Variable speed drives
MPPT
Specifications and Models |
Primary nominal current IPN (A) | Primary current measuring range IPM (A) | Connection | Type |
10 | ±25 | Through hole | STK-10XP/P |
16 | ±40 | Through hole | STK-16XP/P |
20 | ±50 | Through hole | STK-20XP/P |
32 | ±80 | Through hole | STK-32XP/P |
40 | ±100 | Through hole | STK-40XP/P |
50 | ±125 | Through hole | STK-50XP/P |
Electrical data STK-10XP/P
Parameter | Symbol | Unit | Min | Type | Max | Comment |
Primary nominal rms current | IPN | A |
| 10 |
|
|
Primary current,measuring range | IPM | A | -25 |
| 25 |
|
Number of primary turns | NP | - |
| 1 |
|
|
Supply voltage1) | VC | V | 4.5 | 5 | 5.5 |
|
Current consumption | IC | mA |
| 15 | 20 |
|
Reference voltage(output) | VREF | V | 2.48 | 2.5 | 2.52 | Internal reference |
Output voltage range@ IP=IPM | VOUT-VREF | V | -2 |
| 2 |
|
VREF output resistance | RREF | Ω | 130 | 200 | 300 | series |
VOUT output resistance | ROUT | Ω |
| 2 | 5 | series |
Electrical offset voltage @IP=0 | VOE | mV | -5 |
| 5 | VOUT-VREF@VREF=2.5V |
Capacitive loading | CL | nF | 0 |
| 10 |
|
Electrical offset current referred to primary | IOE | mA | -62.5 |
| 62.5 |
|
Temperature coefficient of VREF | TCVREF | ppm/K | -150 |
| 150 | -40ºC85ºC |
Temperature coefficient of VOUT-VREF @IP=0 | TCVOE | mV/K | -0.075 |
| 0.075 | -40ºC85ºC |
Temperature coefficient of IOE | TCIOE | mA/K | -0.94 |
| 0.94 | -40ºC85ºC |
Theoretical sensitivity | GTH | mV/A |
| 80 |
| 800mV @I=IPN |
Sensitivity error | εG | % of IPN | -0.5 |
| 0.5 | Factory adjustment |
Temperature coefficient G | TCG | ppm/K | -200 |
| 200 | -40ºC85ºC |
Linearity error 0IPN | εL | % of IPN | -0.5 |
| 0.5 |
|
Linearity error 0IPM | εL | % of IPM | -0.5 |
| 0.5 |
|
Response time@ 10% of IPN | tra | us |
|
| 1 |
|
Response time@ 90% of IPN | tr | us |
|
| 2 |
|
Frequency bandwidth( -3 dB) | BW | KHZ |
| 400 |
|
|
Accuracy@I=IPN | X | % of IPN | -1 |
| 1 |
|
Accuracy@I=IPN ,TA=+85ºC | X85ºC | % of IPN | -2.5 |
| 2.5 | See formula note2) |
Electrical data STK-16XP/P
Parameter | Symbol | Unit | Min | Type | Max | Comment |
Primary nominal rms current | IPN | A |
| 16 |
|
|
Primary current,measuring range | IPM | A | -40 |
| 40 |
|
Number of primary turns | NP | - |
| 1 |
|
|
Supply voltage1) | VC | V | 4.5 | 5 | 5.5 |
|
Current consumption | IC | mA |
| 15 | 20 |
|
Reference voltage(output) | VREF | V | 2.48 | 2.5 | 2.52 | Internal reference |
Output voltage range@ IP=IPM | VOUT-VREF | V | -2 |
| 2 |
|
VREF output resistance | RREF | Ω | 130 | 200 | 300 | series |
VOUT output resistance | ROUT | Ω |
| 2 | 5 | series |
Electrical offset voltage @IP=0 | VOE | mV | -5 |
| 5 | VOUT-VREF@VREF=2.5V |
Capacitive loading | CL | nF | 0 |
| 10 |
|
Electrical offset current referred to primary | IOE | mA | -100 |
| 100 |
|
Temperature coefficient of VREF | TCVREF | ppm/K | -150 |
| 150 | -40ºC85ºC |
Temperature coefficient of VOUT- VREF @IP=0 | TCVOE | mV/K | -0.075 |
| 0.075 | -40ºC85ºC |
Temperature coefficient of IOE | TCIOE | mA/K | -1.5 |
| 1.5 | -40ºC85ºC |
Theoretical sensitivity | GTH | mV/A |
| 50 |
| 800mV @I=IPN |
Sensitivity error | εG | % of IPN | -0.5 |
| 0.5 | Factory adjustment |
Temperature coefficient G | TCG | ppm/K | -200 |
| 200 | -40ºC85ºC |
Linearity error 0IPN | εL | % of IPN | -0.5 |
| 0.5 |
|
Linearity error 0IPM | εL | % of IPM | -0.5 |
| 0.5 |
|
Response time@ 10% of IPN | tra | us |
|
| 1 |
|
Response time@ 90% of IPN | tr | us |
|
| 2 |
|
Frequency bandwidth( -3 dB) | BW | KHZ |
| 400 |
|
|
Accuracy@I=IPN | X | % of IPN | -1 |
| 1 |
|
Accuracy@I=IPN ,TA=+85ºC | X85ºC | % of IPN | -2.5 |
| 2.5 | See formula note2) |
Electrical data STK-20XP/P
Parameter | Symbol | Unit | Min | Type | Max | Comment |
Primary nominal rms current | IPN | A |
| 20 |
|
|
Primary current,measuring range | IPM | A | -50 |
| 50 |
|
Number of primary turns | NP | - |
| 1 |
|
|
Supply voltage1) | VC | V | 4.5 | 5 | 5.5 |
|
Current consumption | IC | mA |
| 15 | 20 |
|
Reference voltage(output) | VREF | V | 2.48 | 2.5 | 2.52 | Internal reference |
Output voltage range@ IP=IPM | VOUT-VREF | V | -2 |
| 2 |
|
VREF output resistance | RREF | Ω | 130 | 200 | 300 | series |
VOUT output resistance | ROUT | Ω |
| 2 | 5 | series |
Electrical offset voltage @IP=0 | VOE | mV | -5 |
| 5 | VOUT-VREF@VREF=2.5V |
Capacitive loading | CL | nF | 0 |
| 10 |
|
Electrical offset current referred to primary | IOE | mA | -125 |
| 125 |
|
Temperature coefficient of VREF | TCVREF | ppm/K | -150 |
| 150 | -40ºC85ºC |
Temperature coefficient of VOUT- VREF @IP=0 | TCVOE | mV/K | -0.075 |
| 0.075 | -40ºC85ºC |
Temperature coefficient of IOE | TCIOE | mA/K | -1.88 |
| 1.88 | -40ºC85ºC |
Theoretical sensitivity | GTH | mV/A |
| 40 |
| 800mV @I=IPN |
Sensitivity error | εG | % of IPN | -0.5 |
| 0.5 | Factory adjustment |
Temperature coefficient G | TCG | ppm/K | -200 |
| 200 | -40ºC85ºC |
Linearity error 0IPN | εL | % of IPN | -0.5 |
| 0.5 |
|
Linearity error 0IPM | εL | % of IPM | -0.5 |
| 0.5 |
|
Response time@ 10% of IPN | tra | us |
|
| 1 |
|
Response time@ 90% of IPN | tr | us |
|
| 2 |
|
Frequency bandwidth( -3 dB) | BW | KHZ |
| 400 |
|
|
Accuracy@I=IPN | X | % of IPN | -1 |
| 1 |
|
Accuracy@I=IPN ,TA=+85ºC | X 85ºC | % of IPN | -2.5 |
| 2.5 | See formula note2) |
Electrical data STK-32XP/P
Parameter | Symbol | Unit | Min | Type | Max | Comment |
Primary nominal rms current | IPN | A |
| 32 |
|
|
Primary current,measuring range | IPM | A | -80 |
| 80 |
|
Number of primary turns | NP | - |
| 1 |
|
|
Supply voltage1) | VC | V | 4.5 | 5 | 5.5 |
|
Current consumption | IC | mA |
| 15 | 20 |
|
Reference voltage(output) | VREF | V | 2.48 | 2.5 | 2.52 | Internal reference |
Output voltage range@ IP=IPM | VOUT-VREF | V | -2 |
| 2 |
|
VREF output resistance | RREF | Ω | 130 | 200 | 300 | series |
VOUT output resistance | ROUT | Ω |
| 2 | 5 | series |
Electrical offset voltage @IP=0 | VOE | mV | -5 |
| 5 | VOUT-VREF@VREF=2.5V |
Capacitive loading | CL | nF | 0 |
| 10 |
|
Electrical offset current referred to primary | IOE | mA | -200 |
| 200 |
|
Temperature coefficient of VREF | TCVREF | ppm/K | -150 |
| 150 | -40ºC85ºC |
Temperature coefficient of VOUT- VREF @IP=0 | TCVOE | mV/K | -0.075 |
| 0.075 | -40ºC85ºC |
Temperature coefficient of IOE | TCIOE | mA/K | -3 |
| 3 | -40ºC85ºC |
Theoretical sensitivity | GTH | mV/A |
| 25 |
| 800mV @I=IPN |
Sensitivity error | εG | % of IPN | -0.5 |
| 0.5 | Factory adjustment |
Temperature coefficient G | TCG | ppm/K | -200 |
| 200 | -40ºC85ºC |
Linearity error 0IPN | εL | % of IPN | -0.5 |
| 0.5 |
|
Linearity error 0IPM | εL | % of IPM | -0.5 |
| 0.5 |
|
Response time@ 10% of IPN | tra | us |
|
| 1 |
|
Response time@ 90% of IPN | tr | us |
|
| 2 |
|
Frequency bandwidth( -3 dB) | BW | KHZ |
| 400 |
|
|
Accuracy@I=IPN | X | % of IPN | -1 |
| 1 |
|
Accuracy@I=IPN ,TA=+85ºC | X85ºC | % of IPN | -2.5 |
| 2.5 | See formula note2) |
Electrical data STK-40XP/P
Parameter | Symbol | Unit | Min | Type | Max | Comment |
Primary nominal rms current | IPN | A |
| 40 |
|
|
Primary current,measuring range | IPM | A | -100 |
| 100 |
|
Number of primary turns | NP | - |
| 1 |
|
|
Supply voltage1) | VC | V | 4.5 | 5 | 5.5 |
|
Current consumption | IC | mA |
| 15 | 20 |
|
Reference voltage(output) | VREF | V | 2.48 | 2.5 | 2.52 | Internal reference |
Output voltage range@ IP=IPM | VOUT-VREF | V | -2 |
| 2 |
|
VREF output resistance | RREF | Ω | 130 | 200 | 300 | series |
VOUT output resistance | ROUT | Ω |
| 2 | 5 | series |
Electrical offset voltage @IP=0 | VOE | mV | -5 |
| 5 | VOUT-VREF@VREF=2.5V |
Capacitive loading | CL | nF | 0 |
| 10 |
|
Electrical offset current referred to primary | IOE | mA | -250 |
| 250 |
|
Temperature coefficient of VREF | TCVREF | ppm/K | -150 |
| 150 | -40ºC85ºC |
Temperature coefficient of VOUT- VREF @IP=0 | TCVOE | mV/K | -0.075 |
| 0.075 | -40ºC85ºC |
Temperature coefficient of IOE | TCIOE | mA/K | -3.75 |
| 3.75 | -40ºC85ºC |
Theoretical sensitivity | GTH | mV/A |
| 20 |
| 800mV @I=IPN |
Sensitivity error | εG | % of IPN | -0.5 |
| 0.5 | Factory adjustment |
Temperature coefficient G | TCG | ppm/K | -200 |
| 200 | -40ºC85ºC |
Linearity error 0IPN | εL | % of IPN | -0.5 |
| 0.5 |
|
Linearity error 0IPM | εL | % of IPM | -0.5 |
| 0.5 |
|
Response time@ 10% of IPN | tra | us |
|
| 1 |
|
Response time@ 90% of IPN | tr | us |
|
| 2 |
|
Frequency bandwidth( -3 dB) | BW | KHZ |
| 400 |
|
|
Accuracy@I=IPN | X | % of IPN | -1 |
| 1 |
|
Accuracy@I=IPN ,TA=+85ºC | X85ºC | % of IPN | -2.5 |
| 2.5 | See formula note2) |
Electrical data STK-50XP/P
Parameter | Symbol | Unit | Min | Type | Max | Comment |
Primary nominal rms current | IPN | A |
| 50 |
|
|
Primary current,measuring range | IPM | A | -125 |
| 125 |
|
Number of primary turns | NP | - |
| 1 |
|
|
Supply voltage1) | VC | V | 4.5 | 5 | 5.5 |
|
Current consumption | IC | mA |
| 15 | 20 |
|
Reference voltage(output) | VREF | V | 2.48 | 2.5 | 2.52 | Internal reference |
utput voltage range@ IP=IPM | VOUT-VREF | V | -2 |
| 2 |
|
VREF output resistance | RREF | Ω | 130 | 200 | 300 | series |
VOUT output resistance | ROUT | Ω |
| 2 | 5 | series |
Electrical offset voltage @IP=0 | VOE | mV | -5 |
| 5 | VOUT-VREF@VREF=2.5V |
Capacitive loading | CL | nF | 0 |
| 10 |
|
Electrical offset current referred to primary | IOE | mA | -313 |
| 313 |
|
Temperature coefficient of VREF | TCVREF | ppm/K | -150 |
| 150 | -40ºC85ºC |
Temperature coefficient of VOUT- VREF @IP=0 | TCVOE | mV/K | -0.05 |
| 0.05 | -40ºC85ºC |
Temperature coefficient of IOE | TCIOE | mA/K | -3.125 |
| 3.125 | -40ºC85ºC |
Theoretical sensitivity | GTH | mV/A |
| 16 |
| 800mV @I=IPN |
Sensitivity error | εG | % of IPN | -0.5 |
| 0.5 | Factory adjustment |
Temperature coefficient G | TCG | ppm/K | -200 |
| 200 | -40ºC85ºC |
Linearity error 0IPN | εL | % of IPN | -0.5 |
| 0.5 |
|
Linearity error 0IPM | εL | % of IPM | -0.5 |
| 0.5 |
|
Response time@ 10% of IPN | tra | us |
|
| 1 |
|
Response time@ 90% of IPN | tr | us |
|
| 2 |
|
Frequency bandwidth( -3 dB) | BW | KHZ |
| 400 |
|
|
Accuracy@I=IPN | X | % of IPN | -1 |
| 1 |
|
Accuracy@I=IPN ,TA=+85ºC | X85ºC | % of IPN | -2.5 |
| 2.5 | See formula note2) |
Address:
Bulding 10, Floor 2, Zhongguan Road No. 1188, Zhenhai District, Ningbo, Zhejiang, China
Business Type:
Manufacturer/Factory
Business Range:
Electrical & Electronics
Management System Certification:
ISO 9001
Company Introduction:
Sinomags is a world leader in design, manufacture and supply of GMR/TMR wafer, leading edge magnetic sensor, and providing excellent performance, high qualitysolutions for measuring electrical parameters. Our innovation is focus on delivery high accurancy, fast -response, compact disigned current transducer.
Sinomags was founded in 2012 by a team of top experts from magnetism research field and magnetic recording industries with a topline GMR/TMR wafer manufacturing Fab in Euro, and current transducer plants in NingBo, China.
Mission:
Sinomags is committed to deliver state-of-the art magnetic sensor
Technologies and solutions to the industries. We thrive by working with our customers to understand their problems and explore solutions. And our goal is to keep on doing just that solving tough problems that result in world-changing innovations.
Innovation:
Sinomags leads primarily by technical innovation and shares a deep belief in the power of technology. Research and development has been the hallmark of sinomags′s success with independent intellectual property rights and more than 40 patents authorized.