4 Inch 6inch Sic Wafer Materials for Semiconductors Si-N Type Si-P Type
US$ 100-605
/ Piece
20 Pieces (MOQ)
20 Pieces (MOQ)
Product Details
Silicon carbide (SiC), is known as the core material of the third generation semiconductor. It has many outstanding characteristics, such ashigh voltage, high frequency, high bandwidth,high thermal conductivity, high breakdown electric field and electron saturation rate.
Specific
Silicon Wafer/Silicon Plate/Silicon Slice/Optical Silicon Wafer/Semiconductor Silicon Wafer
US$ 20-30
/ Piece
100 Pieces (MOQ)
100 Pieces (MOQ)
General Introduction: Infrared filter thermometer is composed of photodetector, optical system, signal processing, signal amplifier, display output, feedback source and radiation of the measured object.
After modulation by the modulator, it is input into the infrared detector. The inverse amplifier
Artificial Intelligence · Industry · Integrated Circuit
Original FF900r12me7p_B11 FF900r12me7_B11 FF900r12me7_B1 FF900r12me7_B Infineon IGBT Thyristors IGBT Module
US$ 220-240
/ Piece
5 Pieces (MOQ)
5 Pieces (MOQ)
EconoDUAL™ 3 1200 V, 900 A dual TRENCHSTOP™ IGBT7 module with emitter controlled 7 diode, NTC, PressFIT contact technology and pre-applied Thermal Interface Material.
Summary of Features
Highest power density
Best-in-class VCE sat
Tvj op = 175°C overload
Improved terminals
Opt
- DongGuan Dason Electric Company
-
- Guangdong, China
- Contact Now
Artificial Intelligence · Industry · Integrated Circuit
Fs3l40r12W2h7p F3l500r12W3h7 Fs35r12ke3 New Original IGBT Module
US$ 85-95
/ Piece
5 Pieces (MOQ)
5 Pieces (MOQ)
PrimePACK™ 3+ 1200 V, 2400 A dual IGBT module with TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode and NTC. Also available with pre-applied Thermal Interface Material.
Summary of Features
Highest power density
Best-in-class VCEsat
Tvjop= 175°C for overload
Package with CTI > 400
- DongGuan Dason Electric Company
-
- Guangdong, China
- Contact Now
Artificial Intelligence · Industry · Integrated Circuit
Original New Infineon IGBT Thyristors Dd450s45t3e4 Dd400s45kl3 Dd500s33he3 Dd600s65K3 Dd750s65K3 Dd800s45kl3 IGBT Module
US$ 1100-1296
/ Piece
5 Pieces (MOQ)
5 Pieces (MOQ)
XHP™ 3 4500 V, 450 A diode IGBT module with Emitter Controlled E4 Diode and enhanced isolation of 10.4 kV. Predestined to be combined with IGBT module FF450R45T3E4_B5
Summary of Features
High DC stability
High short-circuit capability
High surge current capability
Unbeatable robustness
- DongGuan Dason Electric Company
-
- Guangdong, China
- Contact Now
Artificial Intelligence · Industry · Integrated Circuit
IGBT Module Thyristors New and Original FF1800r23ie7p FF1200r17ke3_B2 FF800r17ke3 FF1200r17kp4-B2 Fz1600r17HP4 Infineon IGBT
US$ 1000-1100
/ Piece
5 Pieces (MOQ)
5 Pieces (MOQ)
PrimePACK™ 3+ 2300 V, 1800 A dual IGBT module with TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode and NTC with pre-applied Thermal Interface Material.
Summary of Features
New voltage class of 2300 V low CR-FIT rate <100 FIT @1500 V, 25 °C, 0 meters above sea level
High current rati
- DongGuan Dason Electric Company
-
- Guangdong, China
- Contact Now
Artificial Intelligence · Industry · Integrated Circuit
FF650r17ie4 FF1000r17ie4 FF1400r12IP4 IGBT Module Thyristors Ickec FF650r17 FF1000r17 FF1400r12 Infineon IGBT
US$ 650-700
/ Piece
5 Pieces (MOQ)
5 Pieces (MOQ)
PrimePACK™ 3 1700 V, 1000 A half bridge dual IGBT module with TRENCHSTOP™ IGBT4, NTC and fast switching chip. Also available with pre-applied Thermal Interface Material.
Summary of Features
Extended operation temperature Tvj op
High DC stability
High current density
Low switching l
- DongGuan Dason Electric Company
-
- Guangdong, China
- Contact Now
Artificial Intelligence · Industry · Integrated Circuit
Original New IGBT Module Thyristors Df1000r17ie4 Df100r07W1h5fp Df120r12W2h3 Df1400r12IP4d Df200r12ke3 Df300r12ke3 Infineon IGBT Module
US$ 420-480
/ Piece
5 Pieces (MOQ)
5 Pieces (MOQ)
PrimePACK™3 1700 V , 1000 A chopper IGBT module with TRENCHSTOP™ IGBT4 and NTC. Also available with pre-applied Thermal Interface Material.
Summary of Features
Extended Operation Temperature Tvj op
High DC Stability
High Current Density
Low Switching Losses
Tvj op== 150°C
L
- DongGuan Dason Electric Company
-
- Guangdong, China
- Contact Now
Artificial Intelligence · Industry · Integrated Circuit
Infineon IGBT New Original FF2400r12IP7 FF1000r17ie4 FF1800r23ie7p FF1600r12IP7 FF1200r17IP5 IGBT Module
US$ 800-900
/ Piece
5 Pieces (MOQ)
5 Pieces (MOQ)
PrimePACK™ 3+ 1200 V, 2400 A dual IGBT module with TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode and NTC. Also available with pre-applied Thermal Interface Material.
Summary of Features
Highest power density
Best-in-class VCEsat
Tvjop= 175°C for overload
Package with CTI > 400
- DongGuan Dason Electric Company
-
- Guangdong, China
- Contact Now
Artificial Intelligence · Industry · Integrated Circuit
FF750r12me7-B11 New Original IGBT Module 1200V 750A Infineon IGBT
US$ 200-210
/ Piece
5 Pieces (MOQ)
5 Pieces (MOQ)
EconoDUAL™ 3 1200 V, 750 A dual TRENCHSTOP™ IGBT7 module with emitter controlled 7 diode, NTC and PressFIT contact technology.
Summary of Features
Highest power density
Tvj op = 175°C overload
Improved terminals
Optimized creepage distance for 1500 V PV applications
PressFIT
- DongGuan Dason Electric Company
-
- Guangdong, China
- Contact Now
-
What are the common applications of Electronic Silicon Material?
Electronic Silicon Material is widely used in electronics for making diodes, transistors, and integrated circuits. Its properties of conductivity make it an essential component in modern technology. Partnering with suppliers in China can provide you with access to high-quality Electronic Silicon Material for your projects.
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How can I identify reputable suppliers of Electronic Silicon Material in china?
Identifying trustworthy suppliers in China involves conducting thorough research and due diligence. Check for certifications, request samples, and review customer feedback. Collaborating with reliable suppliers ensures consistent quality and timely delivery of Electronic Silicon Material materials for your electronic products.
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Why is wholesale procurement advantageous for Electronic Silicon Material?
Opting for wholesale procurement of Electronic Silicon Material offers cost savings, bulk volume availability, and streamlined procurement processes. Trusted suppliers can assist with customization options and discounted pricing, ensuring you receive the quantities you need for your electrical products without compromising on quality.
N-Type · Monocrystalline Silicon · EG-Si
Small Size 1inch Silicon Wafers Ntype CZ Prime Grade
US$ 1-100
/ Piece
25 Pieces (MOQ)
25 Pieces (MOQ)
small size 1inch silicon wafers Ntype CZ prime grade
Product Description
1. what is silicon wafers and it's application:
A silicon wafer is a material essential for manufacturing semiconductors, which are found in all kinds of electronic devices that enrich our lives.
Silicon wafer is the m
N-Type · MG-Si
Custom Precision Cutting High Resistivity N Type Single Side Polished 2 Inch Silicon Wafer
US$ 1-100
/ Piece
25 Pieces (MOQ)
25 Pieces (MOQ)
Custom Precision Cutting High Resistivity N Type Single Side Polished 2 Inch Silicon Wafer
Product Description
1. what is Oxide silicon wafers and it's application:
The silicon thermal dioxide wafer refers to the thermal growth of a uniform dielectric film on the surface of the silicon wafe
in Stock 2" 4" 6" 8"′ 12 Single Polished Silicon Wafer
US$ 1-100
/ Piece
25 Pieces (MOQ)
25 Pieces (MOQ)
In stock 2" 4" 6" 8"'12 Single polished silicon wafer
1. what is Oxide silicon wafers and it's application:
The silicon thermal dioxide wafer refers to the thermal growth of a uniform dielectric film on the surface of the silicon wafer, which is used as an insulation or mask material. The oxidat
Sic Silicon Carbide Wafer Substrates
US$ 0.5
/ Piece
100 Pieces (MOQ)
100 Pieces (MOQ)
Product Description
SiC wafers are semiconductors made from silicon carbide. Developed in 1893, this material is ideal for a variety of applications. In particular, it is excellent for Schottky diodes, Junction Barrier Schottky diodes, switches, and metal oxide semiconductor field-effect transistor
Fz Intrinsic Silicon Wafer Single Crystal /6/8/12 Inch Single Side Polished
US$ 1-100
/ Piece
25 Pieces (MOQ)
25 Pieces (MOQ)
FZ Undoped Silicon Wafer Single Crystal China Supplier High Resistivity2/ 4 /6/8/12 Inch Semiconductor wafers with Single side polished
1. what is Oxide silicon wafers and it's application:
The silicon thermal dioxide wafer refers to the thermal growth of a uniform dielectric film on the surface
N-Type · MG-Si
Factory Supply Far IR Silicon Wafer Si Crystals Laser Cutting High Quality Si Wafer
US$ 1-100
/ Piece
25 Pieces (MOQ)
25 Pieces (MOQ)
Factory Supply far IR silicon wafer Si crystals laser cutting silicon wafer High Quality si wafer
Product Description
The silicon thermal dioxide wafer refers to the thermal growth of a uniform dielectric film on the surface of the silicon wafer, which is used as an insulation or mask material.
High-Performance MOV Zinc Oxide Varistor Resistors for Surge Protection
US$ 1-2
/ Piece
2000 Pieces (MOQ)
2000 Pieces (MOQ)
Superior Product Performance
Product Name
Zinc Oxide Varistor (MOV)
Material
Metal Oxide
Characteristics
Non-Linear Voltage-Current Curve
Use
Core components of lightning(surge) arrester
Standard
IEC60099-4:2014
Shape
Cylinder
Material of Surface
A
P-Type · MG-Si
Silicon Wafer (single side polished) P-Type, 3 Inch Diameter and 0.5 mm Thickness
US$ 1-100
/ Piece
25 Pieces (MOQ)
25 Pieces (MOQ)
Silicon wafer (single side polished), P-type, 3 inch diameter and 0.5 mm thickness
Product Description
The silicon thermal dioxide wafer refers to the thermal growth of a uniform dielectric film on the surface of the silicon wafer, which is used as an insulation or mask material. The oxida
Best Quality N Type Silicon Wafer for Sale From China Factory Suppliers
US$ 1-100
/ Piece
25 Pieces (MOQ)
25 Pieces (MOQ)
Best Quality N type Silicon Wafer for Sale from China Factory Suppliers
Product Description
1. what is silicon wafers and it's application:
The silicon wafer serves as the substrate for microelectronic devices built in and upon the wafer. It undergoes many microfabrication processes, such a
N-Type · EG-Si
Silicon Chip Material Latest Batch Number Fast Recovery Diode Zk1022A-1800V
US$ 100
/ Piece
10 Pieces (MOQ)
10 Pieces (MOQ)
Silicon chip material latest batch number fast recovery diode Zk1022A-1800V
Product Description
We supply various shapes of fast recovery diodes that have a small reverse recovery time.
Its maximum voltage is 4500V, the maximum current is 3000A.
Our rectifier diode has a fast recovery
N-Type · Monocrystalline Silicon · EG-Si
4inch Prime Sio2 Wafers with Oxide Layer 2um, 500nm Silicon Thickness 525um
US$ 1-100
/ Piece
25 Pieces (MOQ)
25 Pieces (MOQ)
4inch prime SiO2 wafers with oxide layer 2um, 500nm silicon thickness 525um
Product Description
what is Oxide silicon wafers and it's application:
The silicon thermal dioxide wafer refers to the thermal growth of a uniform dielectric film on the surface of the silicon wafer, which is used a
2/4/6/8/12 Inch High Resistivity N Type P DOP Silicon Si Wafer Diemensions
US$ 1-100
/ Piece
25 Pieces (MOQ)
25 Pieces (MOQ)
buy function of thickness 2/4/6/8/12 inch high resistivity n type p dop silicon si wafer diemensions
1. what is Oxide silicon wafers and it's application:
The silicon thermal dioxide wafer refers to the thermal growth of a uniform dielectric film on the surface of the silicon wafer, which is us
Silicon Carbide (SiC) Substrates for Power Electronics
US$ 0.5
/ Piece
100 Pieces (MOQ)
100 Pieces (MOQ)
Product Description
SiC wafers are semiconductors made from silicon carbide. Developed in 1893, this material is ideal for a variety of applications. In particular, it is excellent for Schottky diodes, Junction Barrier Schottky diodes, switches, and metal oxide semiconductor field-effect transistor
Conductive 2/4/6 Inches 4h-N P Grade Silicon Carbide Substrate Sic Wafer
US$ 185-205
/ Piece
20 Pieces (MOQ)
20 Pieces (MOQ)
Product Details
Silicon carbide (SiC), is known as the core material of the third generation semiconductor. It has many outstanding characteristics, such ashigh voltage, high frequency, high bandwidth,high thermal conductivity, high breakdown electric field and electron saturation rate.
Specific
N-Type
4inch 6inch Seed Sic Wafer 1.0mm Thickness 4h-N Sic Silicon Carbide Wafer for Seed Growth
US$ 472-500
/ Piece
1 Piece (MOQ)
1 Piece (MOQ)
Product Description
Silicon carbide (SiC), is known as the core material of the third generation semiconductor. It has many outstanding characteristics, such ashigh voltage, high frequency, high bandwidth,high thermal conductivity, high breakdown electric field and electron saturation rate.
Sp
Double Polished Substrate N Type Si Type Sic Wafer Silicon Carbide Wafer Semiconductor
US$ 500-605
/ Piece
20 Pieces (MOQ)
20 Pieces (MOQ)
Product Details
Silicon carbide (SiC), is known as the core material of the third generation semiconductor. It has many outstanding characteristics, such ashigh voltage, high frequency, high bandwidth,high thermal conductivity, high breakdown electric field and electron saturation rate.
Specific
Automotive Electronics · Consumer Electronics · Integrated Circuit
SCR Fast Switching Thyristors Kk1800A1800V for Mf Inductor Furnace
US$ 88
/ Piece
5 Pieces (MOQ)
5 Pieces (MOQ)
SCR Fast Switching Thyristors KK1800A1800V
(Prices are for reference only, please consult the salesperson for specific prices.)
Product Introduction
A thyristor/SCR is a solid-state semiconductor device with four layers of alternating P and N-type materials. Some sources define silicon-controll
0.5mm Thickness Diameter 150mm 4h-N Silicon Carbide Sheet
US$ 655-680
/ Piece
1 Piece (MOQ)
1 Piece (MOQ)
Product Description
Silicon carbide (SiC), is known as the core material of the third generation semiconductor. It has many outstanding characteristics, such ashigh voltage, high frequency, high bandwidth,high thermal conductivity, high breakdown electric field and electron saturation rate.
Sp
500 Um 4 Inch 6 Inch Silicon Carbide Wafer P Grade Sic Wafer Price
US$ 585-605
/ Piece
20 Pieces (MOQ)
20 Pieces (MOQ)
Product Details
Silicon carbide (SiC), is known as the core material of the third generation semiconductor. It has many outstanding characteristics, such ashigh voltage, high frequency, high bandwidth,high thermal conductivity, high breakdown electric field and electron saturation rate.
Specific
Silicon Carbide Substrate 4/6 Inch P Grade 4h-N Sic Wafer for Semiconductor
US$ 585-605
/ Piece
20 Pieces (MOQ)
20 Pieces (MOQ)
Product Details
Silicon carbide (SiC), is known as the core material of the third generation semiconductor. It has many outstanding characteristics, such ashigh voltage, high frequency, high bandwidth,high thermal conductivity, high breakdown electric field and electron saturation rate.
Specific
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