Nanowin 4~6 Inch GaN Epitaxial Wafers/GaN Epi Wafers/GaN Templates (GaN on Si/ GaN on SiC/ GaN on GaN/ GaN on Sapphire)

Negotiable 1 piece (MOQ)
Min. Order:
1 piece
Port:
Shanghai, China
Production Capacity:
50000PCS/Month
Payment Terms:
T/T

Last Login Date:

Jul 20, 2025

Main Products:

Gallium Nitride Free-Standing Substrates, Aluminium Nitride Free-Standing Substrates, Silicon Carbide Free-Standing Substrates, Diamond Single Crystal, GaN Epi Wafers, Aln Epi Wafers, Sic Epi Wafers

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Product Description

Company Info

Address: 112 Minziqian Road, Lixia District, Jinan, Shandong, China
Business Type: Manufacturer/Factory
Business Range: Electrical & Electronics
Management System Certification: ISO 9001, ISO 9000, ISO 14000, OHSAS/ OHSMS 18001, IATF16949, QC 080000
Company Introduction: Advanced Semiconductor Materials Co., Ltd. (ASMC) is a branch of Suzhou Nanowin Science and Technology Co., Ltd (Nanowin).

We are committed to developing and manufacturing best quality and cost effective wide band gap materials: GaN, SiC, AlN, Diamond single crystal substrates and epi wafers.

Our main products:

Gallium Nitride

2-6 inch Free-standing GaN substrates

2-8 inch standard GaN epitaxial wafers

Customized epitaxial wafers for PIN/SBD/HEMT/MOS/LED etc.

Aluminium Nitride

2 inch Free-standing AlN substrates,

2-4 inchAlN epitaxial wafers.

Silicon Carbide

4-6 inch high quality Semi-insulating SiC substrates

4-6 inch SiC epi substrates

Diamond

10*10*0.3mm, 10*10*0.5mm single crystal diamond or polysrystaline diamond (optical grade, electronic grade)

Please feel free to let us know, If you are interested in our products.: )
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