Custom 2-6 Inch GaAs/Inp Epi Wafers
| US$150.00 - 500.00 | 10 Pieces (MOQ) |
Port:
Beijing, China
Payment Terms:
T/T
Advanced Compound Semiconductors (Beijing)Co., Ltd,
Beijing, China
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Product Description
Company Info
Product Description
The company has professional production equipment and experienced technical team.
Specifications for Featured Products:
Substrate type: GaAs Substrates, InP Substrates
The wafer size:2 inches,3 inches,4 inches,6 inches
Epitaxial compound:GaAs,InP,AlGaAs,InGaP,InGaAs,InAlGaAs,InAs,InAlAs
Dopant:Si (N type dopant),Be CBr4 (P type dopant)
Epitaxial Structural product:HEMT,PHEMT,HALL,HBT,PD,APD,Photocathode,VCSEL,EE-lasers
Address:
Building 23 No. 2, Jinsheng Road, Daxing District, Beijing, China
Business Type:
Manufacturer/Factory
Business Range:
Manufacturing & Processing Machinery
Management System Certification:
ISO 9001, ISO 14001
Main Products:
Epi Wafer
Company Introduction:
Advanced compound semiconductors (Beijing) Co., Itd, founded in October 2014, is specialized is engaged in the molecular beam epitaxy (MBE) &MOCVDllI - V compounds in microelectronics and optoelectronics chip maTerials research and development and large-scale production of high technolOgy companies. The company has built the first gallium arsenide molecular Beam epitaxy (MBE) mass production base with independent intellectual Property rights in China, and will achieve the annual output of more than 500, 000 PCS in the future. The company has passed ISO9001: 2015, IS014001, National High-tech Enterprise, Zhongguancun High-tech Enterprise and Other relevant certifications.
The company has completed the construction and commissioning of the first phase of the project. Now it has several production molecular beam epitaxy equipment process lines of Gen2000 and Gen200 from Veeco, including a full set of world-class analysis and testing equipment. It has high-level supporting plants, including 10, 100 class ultra-clean semiconductor and related complete facilities of dust-free workshops. And through the introduction of foreign large-scale molecular beam epitaxy (MBE) equipment, to achieve large-scale production of products. Phase is expected to achieve the industrialization target of 60, 000-80, 000 6-inch gallium arsenide epitaxial chips, and has started large-scale growth at present.
GaAs&lnP epitaxial wafer is an important link in the R&D and production of radio frequency chip and electronic product face ID chip in mobile phone and base station. Advanced compound semiconductors (Beijing) Co., Itd products include compound semiconductor PHEMT and HEMT for radio frequency and VCSEL for optoelectronics. The main indicators of PHEMT, VCSEL and other products have reached the international first-class level, Taking 6 inch PHEMT as an example, the core indexes of characters, such as electron mo- bility, 2D electron gas concentration, epitaxy material inhomogeneity, surface defect density, all reach or are better than those of similar products.
The company has completed the construction and commissioning of the first phase of the project. Now it has several production molecular beam epitaxy equipment process lines of Gen2000 and Gen200 from Veeco, including a full set of world-class analysis and testing equipment. It has high-level supporting plants, including 10, 100 class ultra-clean semiconductor and related complete facilities of dust-free workshops. And through the introduction of foreign large-scale molecular beam epitaxy (MBE) equipment, to achieve large-scale production of products. Phase is expected to achieve the industrialization target of 60, 000-80, 000 6-inch gallium arsenide epitaxial chips, and has started large-scale growth at present.
GaAs&lnP epitaxial wafer is an important link in the R&D and production of radio frequency chip and electronic product face ID chip in mobile phone and base station. Advanced compound semiconductors (Beijing) Co., Itd products include compound semiconductor PHEMT and HEMT for radio frequency and VCSEL for optoelectronics. The main indicators of PHEMT, VCSEL and other products have reached the international first-class level, Taking 6 inch PHEMT as an example, the core indexes of characters, such as electron mo- bility, 2D electron gas concentration, epitaxy material inhomogeneity, surface defect density, all reach or are better than those of similar products.
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