High Voltage Semiconductor Mosfet
US$0.20 / Piece
Telecom Power Fast Recovery Diode pictures & photos
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Telecom Power Fast Recovery Diode pictures & photos
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Telecom Power Fast Recovery Diode pictures & photos
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Telecom Power Fast Recovery Diode pictures & photos
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Telecom Power Fast Recovery Diode pictures & photos
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Telecom Power Fast Recovery Diode pictures & photos
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What is Telecom Power Fast Recovery Diode

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Details
Company Profile

Price

Min. Order Reference FOB Price

660 Pieces US$0.20 / Piece

Sepcifications

  • Certification RoHS, ISO
  • Shape Metal Porcelain Tube
  • Shielding Type Sharp Cutoff Shielding Tube
  • Cooling Method Air Cooled Tube
  • Function Switch Transistor
  • Working Frequency High Frequency
  • Structure Planar
  • Encapsulation Structure Plastic Sealed Transistor
  • Power Level High Power
  • Material Silicon
  • Transport Package Carton
  • Specification 35x30x37cm
  • Trademark Orientalsemiconductor
  • Origin China
  • Description Extremely Low Switching Loss
  • Characteristics Excellent Stability and Uniformity
  • Applications PC Power
  • Industries LED Lighting

Product Description

Product Description General Description The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. ...

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Audio Frequency Power Amplifier Transistor 3A, 60V D2012 2SD2012

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Transaction Info
Price US$0.20 / Piece US$0.27 - 0.30 / Piece US$0.10 - 0.25 / Piece US$0.10 - 0.13 / Piece US$0.115 - 0.13 / Piece
Min Order 660 Pieces 100 Pieces 100 Pieces 1,000 Pieces 1,000 Pieces
Payment Terms LC, T/T, D/P, Western Union T/T, PayPal, Western Union T/T, PayPal, Western Union T/T, PayPal, Western Union T/T, PayPal, Western Union
Quality Control
Product Certification RoHS, ISO - - RoHS RoHS
Management System Certification - - - - -
Trade Capacity
Export Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe South America, Europe, Southeast Asia/ Mideast, South Asia South America, Europe, Southeast Asia/ Mideast, South Asia South America, Europe, Southeast Asia/ Mideast, South Asia South America, Europe, Southeast Asia/ Mideast, South Asia
Annual Export Revenue - - - - -
Business Model - - - - -
Average Lead Time Peak Season Lead Time: one month
Off Season Lead Time: 3-6 months		 Peak Season Lead Time: one month
Off Season Lead Time: within 15 workdays		 Peak Season Lead Time: one month
Off Season Lead Time: within 15 workdays		 Peak Season Lead Time: one month
Off Season Lead Time: within 15 workdays		 Peak Season Lead Time: one month
Off Season Lead Time: within 15 workdays
Product Attributes
Specification
Shape: Metal Porcelain Tube;
Shielding Type: Sharp Cutoff Shielding Tube;
Cooling Method: Air Cooled Tube;
Function: Switch Transistor;
Working Frequency: High Frequency;
Structure: Planar;
Encapsulation Structure: Plastic Sealed Transistor;
Power Level: High Power;
Material: Silicon;
Description: Extremely Low Switching Loss;
Characteristics: Excellent Stability and Uniformity;
Applications: PC Power;
Industries: LED Lighting;
Function: Transistor;
Transistor Polarity: N-Channel;
Operating Temperature: Standard;
Vgs-Gate-Source Breakdown Voltage: 20 V;
Samacsys Description: Mosfet N-Channel 55V 110A;
Installation Style: Through Hole;
Product Number: Irf3205;
Description: Mosfet N-CH 55V 110A;
Category: Transistors;
Drain to Source Voltage (Vdss): 55V;
Function: Microwave Transistor, Switch Transistor;
Working Frequency: High Frequency;
Structure: Diffusion;
Encapsulation Structure: Chip Transistor;
Power Level: High Power;
Material: Iron and Plastic;
Transistor Application: Amplifier;
Polarity/Channel Type: NPN;
DC Current Gain-Min (Hfe): 100;
Collector Current-Max (IC): 3 a;
Shape: ST;
Cooling Method: Naturally Cooled Tube;
Function: High Back Pressure Transistor, Microwave Transistor;
Encapsulation Structure: Chip Transistor;
Power Level: High Power;
Transistor Type Product Parament: 8 NPN Darlington;
Detailed Description: Transistor Array 8 NPN Darlington 50V 500mA 2.25W;
Product Number: Uln2804A;
Collector- Emitter Voltage Vceo Max: 50 V;
Transistor Polarity: NPN;
Product Category: Darlington Transistor;
Description: Darlington Transistors Eight NPN Array;
Shape: ST;
Cooling Method: Naturally Cooled Tube;
Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor;
Working Frequency: Medium Power Tube;
Structure: NPN;
Encapsulation Structure: Chip Transistor;
Material: Silicon;
Transistor Type: NPN;
Product Type: Switching Diode;
Package: Plug-in Transistor;
Installation Type: Through Hole;
Family: Transistor (Bjt) - Single;
Collector-Emitter Voltage-Max: 60 V;
Transistor Application: Amplifier;
Product Number: 2SD2012;
Category: Transistor;
Package Style: Flange Mount;
Current - Collector (IC) (Max): 3A;
Supplier Name

Shanghai Winture Electric Co., Ltd.

Gold Member Audited Supplier

Shenzhen Jin Da Peng Technology Co., Ltd.

Diamond Member Audited Supplier

Shenzhen Jin Da Peng Technology Co., Ltd.

Diamond Member Audited Supplier

Shenzhen Jin Da Peng Technology Co., Ltd.

Diamond Member Audited Supplier

Shenzhen Jin Da Peng Technology Co., Ltd.

Diamond Member Audited Supplier

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