What is Automotive Qualified IGBT Module with Integrated Current Sensors & Overvoltage Protection

Name: Automotive Qualified IGBT Module with Integrated Current Sensors & Overvoltage Protection
Uploaded: 2025-11-02T13:39:56+08:00
Description: Product Description Company Profile Anhui Red Power Microelectronics Co. Ltd Anhui Red Power Microelectronics Co. Ltd was established in June 2019 and is based in Wuhu City, Anhui Province. It is a hi

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Price

Purchase Qty. Reference FOB Price

10-999 Pieces US$5.00

1,000+ Pieces US$1.00

Sepcifications

Application Power Electronic Components, Refrigerator, Solar Cell, EV, Solar Energy,
Certification RoHS
Manufacturing Technology Integrated Circuits Device
Material Power Semiconductor
Model A1
Package A1, A3, A4, A5, A6
Signal Processing Digital
Transport Package Box
Specification IGBT
Trademark RP
Origin Made in China
Refer to Infenon Hpd, HP1, DC

Product Description

Product Description Company Profile Anhui Red Power Microelectronics Co. Ltd Anhui Red Power Microelectronics Co. Ltd was established in June 2019 and is based in Wuhu City, Anhui Province. It is a high-tech enterprise with a collection of IGBT, FRD, SiC chips and power modules design, production, ...

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Shanghai Cesar Industrial Co., Ltd

Gold Member Since 2018

Audited Supplier

Rating & Reviews: 5.0/5.0

(1 Reviews)

Business Type Trading Company
Main Products Packing list envelopes, Moving Blanket, Moving Pad, Furniture Pad, Furniture Cover, Webbing Sling; Ratchet Lashing; Cargo Tie Down
Number of Employees 2
Year of Establishment 2018-04-28
Management System Certification ISO 9001
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays

IGBT Comparison

	Automotive Qualified IGBT Module with Integrated Current Sensors & Overvoltage Protection Contact Now	68V/7.2mΩ /80A N-Mosfet DTG080n07n to-220c Contact Now	Hot Sale 25A 110V N-Channel Enhancement Mode Power Mosfet Dhs250n11d to-252b Contact Now	180A 100V N-Channel Enhancement Mode Power Mosfet DSG040n10n3a to-220c Contact Now	Hot Sale 60A 200V Fast Recovery Diode Mur6020bca to-247s Contact Now

Transaction Info
	Automotive Qualified IGBT Module with Integrated Current Sensors & Overvoltage Protection Contact Now	68V/7.2mΩ /80A N-Mosfet DTG080n07n to-220c Contact Now	Hot Sale 25A 110V N-Channel Enhancement Mode Power Mosfet Dhs250n11d to-252b Contact Now	180A 100V N-Channel Enhancement Mode Power Mosfet DSG040n10n3a to-220c Contact Now	Hot Sale 60A 200V Fast Recovery Diode Mur6020bca to-247s Contact Now
Price	US$1.00 - 5.00 / Piece	US$0.01 - 0.20 / Piece	US$0.01 - 1.50 / Piece	US$0.01 - 1.50 / Piece	US$0.01 - 1.50 / Piece
Min Order	10 Pieces	5,000 Pieces	5,000 Pieces	5,000 Pieces	5,000 Pieces
Payment Terms	LC, T/T	LC, T/T, D/P, PayPal, Western Union, Small-amount payment	LC, T/T, D/P, PayPal, Western Union, Small-amount payment	LC, T/T, D/P, PayPal, Western Union, Small-amount payment	LC, T/T, D/P, PayPal, Western Union, Small-amount payment
Quality Control
Product Certification	RoHS	-	RoHS	RoHS	RoHS
Management System Certification	-	IATF16949	IATF16949	IATF16949	IATF16949
Trade Capacity
Export Markets	North America	South Asia	South Asia	South Asia	South Asia
Annual Export Revenue	-	-	-	-	-
Business Model	ODM	Own Brand, ODM, OEM	Own Brand, ODM, OEM	Own Brand, ODM, OEM	Own Brand, ODM, OEM
Average Lead Time	Peak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays	Peak Season Lead Time: one month Off Season Lead Time: one month	Peak Season Lead Time: one month Off Season Lead Time: one month	Peak Season Lead Time: one month Off Season Lead Time: one month	Peak Season Lead Time: one month Off Season Lead Time: one month
Product Attributes
Specification	Application: Power Electronic Components, Refrigerator, Solar Cell, EV, Solar Energy,; Manufacturing Technology: Integrated Circuits Device; Material: Power Semiconductor; Model: A1; Package: A1, A3, A4, A5, A6; Signal Processing: Digital; Refer to Infenon: Hpd, HP1, DC;	Application: Power Switching, Converters, Full Bridge Control; Batch Number: 2021; Manufacturing Technology: Discrete Device; Material: Metal-Oxide Semiconductor; Model: DTG080n07n; Package: to-252b; Type: N-Type Semiconductor; Voltage: 68V; Current: 80A; Brand: Wxdh;	Application: Power Switching Circuit; Batch Number: 2024; Manufacturing Technology: Discrete Device; Material: Metal-Oxide Semiconductor; Model: Dhs250n11d; Package: to-252b; Type: N-Type Semiconductor; Voltage: 110V; Current: 25A; Brand: Wxdh;	Application: Power Switching Circuit; Batch Number: 2024; Manufacturing Technology: Discrete Device; Material: Metal-Oxide Semiconductor; Model: DSG040n10n3a; Package: to-220c; Type: N-Type Semiconductor; Voltage: 100V; Current: 180A; Brand: Wxdh;	Application: Switching Power Supply; Batch Number: 2021; Manufacturing Technology: Discrete Device; Material: Silicon; Model: Mur6020bca; Package: to-247s; Type: N-Type Semiconductor; Voltage: 200V; Current: 60A; Brand: Wxdh;
Supplier Name	Shanghai Cesar Industrial Co., Ltd	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd
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