Fast Recovery Triode

US$0.05 - 3.00 / Piece

Fast Recovery Rectifier Triode for Efficient Power Switching pictures & photos

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What is Fast Recovery Rectifier Triode for Efficient Power Switching

Name: Fast Recovery Rectifier Triode for Efficient Power Switching
Uploaded: 2025-08-25T19:23:06+08:00
Description: Product Description The FST06A-800BW triac is suitable for general purpose AC switching. It can be used as an ON/OFF function in applications such as heating regulation, induction motor starting circu

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Price

Min. Order Reference FOB Price

1 Piece US$0.05 - 3.00 / Piece

Sepcifications

Certification RoHS, CE, ISO
Transport Package Carton Box/ Pallet
Specification 40cm*40cm*20cm
Trademark FUANSHI
Origin China
Storage Junction Temperature Range -40-150ºC
Operating Junction Temperature Range -40-125ºC
Repetitive Peak off-State Voltage (Tj=25 800V
Repetitive Peak Reverse Voltage (Tj=25 800V
RMS on-State Current (Tc≤100ºC) 6A
Itsm 65A/72A
I2t Value for Fusing (Tp=10ms , Tj=25 A2s
Di/Dt 100 a/μs
Peak Gate Current (Tp=20μs , Tj=125 4A
Average Gate Power Dissipation (Tj=125 0.5W
Peak Gate Power 10W
Peak Pulse Voltage 4kv

Product Description

Product Description The FST06A-800BW triac is suitable for general purpose AC switching. It can be used as an ON/OFF function in applications such as heating regulation, induction motor starting circuits, for phase control operation in light dimmers, motor speed controllers. FST06A-800BW ...

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Beijing Fuanshi Technology Co., Ltd.

Gold Member Since 2025

Audited Supplier

Business Type Manufacturer/Factory & Trading Company
Main Products Power Regulator, Control Cabinet
Number of Employees 4
Year of Establishment 2007-05-30
Management System Certification ISO9001:2015, ISO14001:2015
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays

Fast Recovery Triode Comparison

	Fast Recovery Rectifier Triode for Efficient Power Switching Contact Now	Original Mosfet Ipw60r060p7xksa1 N-Channel 600V 48A (Tc) 164W (Tc) Transistor 60r060 Contact Now	Original Bipolar (BJT) Transistor NPN 2sc2873 2SA1213 Contact Now	Original Bss138 N-Channel 50V 220mA (Ta) 350MW (Ta) Single Mosfet Transistor Contact Now	Quick View 2sc2879 4cx1000A 2sc2879 4cx1000A 12ax7 4cx800A Power Mosfet PNP NPN Transistors SMD Triode Amplifier IGBT Transistor Contact Now

Transaction Info
	Fast Recovery Rectifier Triode for Efficient Power Switching Contact Now	Original Mosfet Ipw60r060p7xksa1 N-Channel 600V 48A (Tc) 164W (Tc) Transistor 60r060 Contact Now	Original Bipolar (BJT) Transistor NPN 2sc2873 2SA1213 Contact Now	Original Bss138 N-Channel 50V 220mA (Ta) 350MW (Ta) Single Mosfet Transistor Contact Now	Quick View 2sc2879 4cx1000A 2sc2879 4cx1000A 12ax7 4cx800A Power Mosfet PNP NPN Transistors SMD Triode Amplifier IGBT Transistor Contact Now
Price	US$0.05 - 3.00 / Piece	US$0.20 / Piece	US$0.03 / Piece	US$0.01 / Piece	US$5.00 / Piece
Min Order	1 Piece	10 Pieces	1 Piece	100 Pieces	1 Piece
Payment Terms	LC, T/T, D/P, PayPal	LC, T/T	LC, T/T	LC, T/T	LC, T/T, D/P, Western Union, Small-amount payment, PayPal
Quality Control
Product Certification	RoHS, CE, ISO	RoHS	RoHS	RoHS	RoHS, ISO, CCC
Management System Certification	ISO9001:2015, ISO45001:2018, ISO14001	-	-	-	-
Trade Capacity
Export Markets	Domestic	North America, South America, Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea), Australia	North America, South America, Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea), Australia	North America, South America, Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea), Australia	Europe
Annual Export Revenue	-	-	-	-	59,508,592 RMB
Business Model	Own Brand, ODM, OEM	Own Brand, ODM	Own Brand, ODM	Own Brand, ODM	OEM
Average Lead Time	Peak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays	Peak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays	Peak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays	Peak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays	Peak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays
Product Attributes
Specification	Storage Junction Temperature Range: -40-150ºC; Operating Junction Temperature Range: -40-125ºC; Repetitive Peak off-State Voltage (Tj=25: 800V; Repetitive Peak Reverse Voltage (Tj=25: 800V; RMS on-State Current (Tc≤100ºC): 6A; Itsm: 65A/72A; I2t Value for Fusing (Tp=10ms , Tj=25: A2s; Di/Dt: 100 a/μs; Peak Gate Current (Tp=20μs , Tj=125: 4A; Average Gate Power Dissipation (Tj=125: 0.5W; Peak Gate Power: 10W; Peak Pulse Voltage: 4kv;	Encapsulation Structure: Chip Transistor; Installation: Plug-in Triode; Power Level: Medium Power; Structure: Mosfet; Material: Silicon; Fet Feature: N-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 600 V; Current - Continuous Drain (ID) @ 25: 48A (Tc); RDS on (Max) @ ID, Vgs: 60mohm @ 15.9A, 10V; Vgs(Th) (Max) @ ID: 4V @ 800µa; Gate Charge (Qg) (Max) @ Vgs: 67 Nc @ 10 V; Input Capacitance (CISS) (Max) @ Vds: 2895 PF @ 400 V; Operating Temperature: -55°c ~ 150°c (Tj); Mounting Type: Through Hole; Package / Case: to-247-3;	Encapsulation Structure: Chip Transistor; Installation: SMD Triode; Power Level: Medium Power; Structure: NPN; Material: Silicon; Transistor Type: NPN; Current - Collector (IC) (Max): 2 a; Voltage - Collector Emitter Breakdown (M: 50 V; Vce Saturation (Max) @ Ib, IC: 500mv @ 50mA, 1A; Current - Collector Cutoff (Max): 100na (Icbo); DC Current Gain (Hfe) (Min) @ IC, Vce: 70 @ 500mA, 2V; Power - Max: 500 MW; Operating Temperature: 150°c (Tj); Mounting Type: Surface Mount; Package / Case: to-243AA;	Encapsulation Structure: Chip Transistor; Installation: SMD Triode; Power Level: Medium Power; Structure: Mosfet; Material: Silicon; Fet Type: N-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 50 V; Current - Continuous Drain (ID) @ 25: 220mA (Ta); Drive Voltage (Max RDS on, Min RDS on): 4.5V, 10V; RDS on (Max) @ ID, Vgs: 3ohm @ 500mA, 10V; Vgs(Th) (Max) @ ID: 1.6V @ 250µa; Gate Charge (Qg) (Max) @ Vgs: 2.4 Nc @ 10 V; Vgs (Max): ±20V; Input Capacitance (CISS) (Max) @ Vds: 27 PF @ 25 V; Operating Temperature: 150°c (Tj); Mounting Type: Surface Mount; Package / Case: Sot-23-3; Power Dissipation (Max): 350MW (Ta);	Encapsulation Structure: Plastic Sealed Transistor; Installation: SMD Triode; Working Frequency: High Frequency; Power Level: High Power; Function: Photosensitive, Power Triode, Switching Triode; Structure: NPN; Material: Silicon; Operating Temperature: -55~ 150(Celsius); Maximum Allowable Collector Current: 10A; Maximum Collector Current (Icm): 500mA; Maximum Power: 300MW; Transistor Polarity: NPN Transistor; Collector Breakdown Voltage (Vceo): 25V; Ultrasonic Electronic Circuit Machine EQ: Ultrasonic Electronic Circuit Machine Equipment; Supplier Type: Original Manufacturer; DC Current Gain (Hfe) (Min) @ IC, Vce: DC Current Gain (Hfe) (Min) @ IC, Vce; Mounting Type: Through Hole; Type: 2sc3998;
Supplier Name	Beijing Fuanshi Technology Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	Finest Printed Circuit Board Ltd.
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