GaN RF

US$600.00 / Piece

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What is High-Performance GaN RF Power Devices Sutable for Wireless Communication, EMC, Radio Positioning, Telemetry Application GaN Transistor

Name: High-Performance GaN RF Power Devices Sutable for Wireless Communication, EMC, Radio Positioning, Telemetry Application GaN Transistor
Uploaded: 2025-10-03T18:41:38+08:00
Description: Company Profile Shenzhen Eversmart Technology Co., Ltd. was founded in 2014, is a high-tech enterprise integrating research and development, production and sales. Since its inception, the company has

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Price

Min. Order Reference FOB Price

100 Pieces US$600.00 / Piece

Sepcifications

Application Power Electronic Components, Radio, Television, Signal Jamming
Batch Number 2025
Certification CE, RoHS
Manufacturing Technology Discrete Device
Material GaN
Model GaN
Package SMD
Signal Processing Analog Digital Composite and Function
Type P-Type Semiconductor
Transport Package Reel/Tape
Specification other
Trademark Eversmart
Origin China
High Power up to 600W
Operation Temperature up to 150degree
Frequency Band Narrow Band or Wide Band

Product Description

Company Profile Shenzhen Eversmart Technology Co., Ltd. was founded in 2014, is a high-tech enterprise integrating research and development, production and sales. Since its inception, the company has taken security products as its main business, and since 2018, the R&D team has begun to layout the ...

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Shenzhen Eversmart Technology Co., Ltd.

Diamond Member Since 2025

Audited Supplier

Rating & Reviews: 5.0/5.0

(2 Reviews)

Business Type Trading Company
Business Range Electrical & Electronics
Main Products Anti-Drone, Signal Blocker, RF Amplifier Module, GaN Power Transistor
Plant Area 101~500 square meters
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays

GaN RF Comparison

	High-Performance GaN RF Power Devices Sutable for Wireless Communication, EMC, Radio Positioning, Telemetry Application GaN Transistor Contact Now	Quick View Wholesale Dummy Semiconductor Silicon Wafer Contact Now	Quick View Custom 12 Inch Dummy Sic Silicon Semiconductor Wafer Contact Now	Quick View High Quality Semiconductor Dummy Silicon Wafers Contact Now	Quick View Epi Wafer 12inch Monocrystalline Silicon Dummy Wafer Contact Now

Transaction Info
	High-Performance GaN RF Power Devices Sutable for Wireless Communication, EMC, Radio Positioning, Telemetry Application GaN Transistor Contact Now	Quick View Wholesale Dummy Semiconductor Silicon Wafer Contact Now	Quick View Custom 12 Inch Dummy Sic Silicon Semiconductor Wafer Contact Now	Quick View High Quality Semiconductor Dummy Silicon Wafers Contact Now	Quick View Epi Wafer 12inch Monocrystalline Silicon Dummy Wafer Contact Now
Price	US$600.00 / Piece	US$10.00 - 100.00 / pc	US$10.00 - 100.00 / pc	US$10.00 - 100.00 / pc	US$10.00 - 100.00 / pc
Min Order	100 Pieces	25 pc	25 pc	25 pc	25 pc
Payment Terms	-	T/T, PayPal	T/T, PayPal	T/T, PayPal	T/T, PayPal
Quality Control
Product Certification	CE, RoHS	-	-	-	-
Management System Certification	-	-	-	-	-
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Southeast Asia/ Mideast, East Asia(Japan/ South Korea)
Annual Export Revenue	-	-	-	-	-
Business Model	-	Own Brand, ODM, OEM	Own Brand, ODM, OEM	Own Brand, ODM, OEM	Own Brand, ODM, OEM
Average Lead Time	Peak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays	Peak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays	Peak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays	Peak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays	Peak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays
Product Attributes
Specification	Application: Power Electronic Components, Radio, Television, Signal Jamming; Batch Number: 2025; Manufacturing Technology: Discrete Device; Material: GaN; Model: GaN; Package: SMD; Signal Processing: Analog Digital Composite and Function; Type: P-Type Semiconductor; High Power: up to 600W; Operation Temperature: up to 150degree; Frequency Band: Narrow Band or Wide Band;	Application: Semi Standard; Material: Compound Semiconductor; Type: P-Type Semiconductor; Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Frront Side: Polished; Edge: Polished; Diameter: 300±0.2mm; Thickness: 775±25μm;	Application: Semi Standard; Material: Compound Semiconductor; Type: P-Type Semiconductor; Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Frront Side: Polished; Edge: Polished; Diameter: 300±0.2mm; Thickness: 775±25μm;	Application: Semi Standard; Material: Compound Semiconductor; Type: P-Type Semiconductor; Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Frront Side: Polished; Edge: Polished; Diameter: 300±0.2mm; Thickness: 775±25μm;	Application: Semi Standard; Material: Compound Semiconductor; Type: P-Type Semiconductor; Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Frront Side: Polished; Edge: Polished; Diameter: 300±0.2mm; Thickness: 775±25μm;
Supplier Name	Shenzhen Eversmart Technology Co., Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.
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