| Specification |
Type: Laser Dust Sensor;
Output Signal Type: Digital Type;
Material: Metal;
Customized: Non-Customized;
Product Name: Pm Sensor;
Type of Detection: Pm2.5,Pm10,Pm1.0 (μG/M³);
Application: School, Home, Factory;
Measure Range: 0~1000μG/M³;
Operating Voltage: DC 5V±0.1V;
Operating Current: ≤100mA (@5V Power Supply);
Stability Time: ≤8s;
Resolution: 1ug/M3;
Output Methods: Default Output Uart;
Lifespan: >40,000 Hours (Continuous Operation);
Detection Frequency: Once Per Second (Default);
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Type: Through Beam Photo Electric Sensors;
Output Signal Type: Transistor Output, Open Collector, NPN/PNP Based O;
Production Process: Normal Wirewound;
Material: PC+ABS;
Feature: SemiConductor;
IP Rating: IP65;
Customized: Non-Customized;
Light Source Wavelength: 850nm;
Protective Circuit: Reverse Polarity Protection, Short Circuit Protect;
Gross Packing Weight: 0.500 Kg;
Resistance to Ambient Light: Sunlight: Max.60000lux; Incandescent Lamp: Max.300;
Output Type: Transistor Output, Open Collector, NPN/PNP Based O;
Manner of Execution: Select The Light on/Dark on Mode by Model;
Protection Circuit: Reverse Polarity Protection, Short Circuit Protect;
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Type: Through Beam Photo Electric Sensors;
Output Signal Type: Transistor Output, Open Collector, NPN/PNP Based O;
Production Process: Normal Wirewound;
Material: PC+ABS;
Feature: SemiConductor;
IP Rating: IP65;
Customized: Non-Customized;
Light Source Wavelength: 850nm;
Protective Circuit: Reverse Polarity Protection, Short Circuit Protect;
Gross Packing Weight: 0.500 Kg;
Resistance to Ambient Light: Sunlight: Max.60000lux; Incandescent Lamp: Max.300;
Output Type: Transistor Output, Open Collector, NPN/PNP Based O;
Manner of Execution: Select The Light on/Dark on Mode by Model;
Protection Circuit: Reverse Polarity Protection, Short Circuit Protect;
|
Type: Through Beam Photo Electric Sensors;
Output Signal Type: Transistor Output, Open Collector, NPN/PNP Based O;
Production Process: Normal Wirewound;
Material: PC+ABS;
Feature: SemiConductor;
IP Rating: IP65;
Customized: Non-Customized;
Light Source Wavelength: 850nm;
Protective Circuit: Reverse Polarity Protection, Short Circuit Protect;
Gross Packing Weight: 0.500 Kg;
Resistance to Ambient Light: Sunlight: Max.60000lux; Incandescent Lamp: Max.300;
Output Type: Transistor Output, Open Collector, NPN/PNP Based O;
Manner of Execution: Select The Light on/Dark on Mode by Model;
Protection Circuit: Reverse Polarity Protection, Short Circuit Protect;
|
Type: Through Beam Photo Electric Sensors;
Output Signal Type: Transistor Output, Open Collector, NPN/PNP Based O;
Production Process: Normal Wirewound;
Material: PC+ABS;
Feature: SemiConductor;
IP Rating: IP65;
Customized: Non-Customized;
Light Source Wavelength: 850nm;
Protective Circuit: Reverse Polarity Protection, Short Circuit Protect;
Gross Packing Weight: 0.500 Kg;
Resistance to Ambient Light: Sunlight: Max.60000lux; Incandescent Lamp: Max.300;
Output Type: Transistor Output, Open Collector, NPN/PNP Based O;
Manner of Execution: Select The Light on/Dark on Mode by Model;
Protection Circuit: Reverse Polarity Protection, Short Circuit Protect;
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