IGBT Transistor

US$0.70-0.85 / Piece

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Fga25n120 Induction Cooker Field Effect Transistor IGBT 25A/1200V pictures & photos

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What is Fga25n120 Induction Cooker Field Effect Transistor IGBT 25A/1200V

Name: Fga25n120 Induction Cooker Field Effect Transistor IGBT 25A/1200V
Uploaded: 2022-02-17T16:57:04+08:00
Description: Product Paramenters • High speed switching • Low saturation voltage : VCE(sat) = 2.5 V @ IC = 25A • High input impedance Company Profile Product packaging FAQ ---------

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Price

Min. Order Reference FOB Price

450 Pieces US$0.70-0.85 / Piece

Sepcifications

Certification RoHS, CE
Encapsulation Structure Chip Transistor
Installation Plug-in Triode
Working Frequency Low Frequency
Power Level Medium Power
Function Photosensitive, Darlington Tube, Power Triode, Switching Triode
Structure PNP
Material Silicon
Transport Package Carton
Origin China
Shipping by DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post
Condition Brand Newand Original
Use MOS-Arr/Display Components
Application Induction Cooker
Installation Type Inline
Fet Type N-Channel
Product Number Fga25n120
Description IGBT 1200V 50A 313W To3p
Category Transistors
IGBT Type Trench Field Stop
Vce(on) (Max) @ Vge, IC 2V @ 15V, 25A
Input Type Standard
Product Fga25

Product Description

Product Paramenters • High speed switching • Low saturation voltage : VCE(sat) = 2.5 V @ IC = 25A • High input impedance Company Profile Product packaging FAQ ...

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Shenzhen Jin Da Peng Technology Co., Ltd.

Diamond Member Since 2016

Audited Supplier

Rating & Reviews： 5.0/5.0

(1 Reviews)

Business Type Trading Company
Main Products Transistor, IC, Rectifier
Number of Employees 18
Year of Establishment 2008-09-17
Plant Area 250 square meters
Average Lead Time Peak Season Lead Time: one month
Off Season Lead Time: within 15 workdays

IGBT Transistor Comparison

	Quick View Fga25n120 Induction Cooker Field Effect Transistor IGBT 25A/1200V Contact Now	Quick View Bav99 SMD Sot-23-3 Diode A7w Bav99 Diode Arrays Bom PCBA Service Contact Now	B2100A-13-F 2.0A High Voltage Diode Schottky Barrier Rectifier Do-214AC SMA Contact Now	40t120fes Welding Machine High-Power IGBT Single Tube to-247 Integrated Circuit, Electronic Components, Inverter Contact Now	2n7002K-T1-Ge3 Electronic Components Transistor Sot-23 Contact Now

Transaction Info
	Quick View Fga25n120 Induction Cooker Field Effect Transistor IGBT 25A/1200V Contact Now	Quick View Bav99 SMD Sot-23-3 Diode A7w Bav99 Diode Arrays Bom PCBA Service Contact Now	B2100A-13-F 2.0A High Voltage Diode Schottky Barrier Rectifier Do-214AC SMA Contact Now	40t120fes Welding Machine High-Power IGBT Single Tube to-247 Integrated Circuit, Electronic Components, Inverter Contact Now	2n7002K-T1-Ge3 Electronic Components Transistor Sot-23 Contact Now
Price	US $ 0.70-0.85/ Piece	US $ 0.02-0.03/ Piece	US $ 0.053-0.06/ Piece	US $ 0.96-1.138/ Piece	US $ 0.0001-0.10/ Piece
Min Order	450 Pieces	1 Pieces	10 Pieces	100 Pieces	1 Pieces
Trade Terms	FOB	-	-	-	-
Payment Terms	L/C, T/T, D/P, Western Union, Paypal	T/T, Western Union, Paypal	T/T, Western Union, Paypal	T/T	L/C, T/T, D/P, Western Union, Paypal, Money Gram
Quality Control
Product Certification	RoHS, CE	RoHS, ISO	RoHS, ISO	RoHS	RoHS, CE, ISO, CCC
Management System Certification	-	GMP	GMP	-	GMP
Trade Capacity
Export Markets	South America, Europe, Southeast Asia/ Mideast, Others	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	-	OEM	OEM	-	OEM
Average Lead Time	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	-	-	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	-
Product Attributes
Specification	Encapsulation Structure: Chip Transistor; Installation: Plug-in Triode; Working Frequency: Low Frequency; Power Level: Medium Power; Function: Photosensitive, Darlington Tube, Power Triode, Switching Triode; Structure: PNP; Material: Silicon; Shipping by: DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post; Condition: Brand Newand Original; Use: MOS-Arr/Display Components; Application: Induction Cooker; Installation Type: Inline; Fet Type: N-Channel; Product Number: Fga25n120; Description: IGBT 1200V 50A 313W To3p; Category: Transistors; IGBT Type: Trench Field Stop; Vce(on) (Max) @ Vge, IC: 2V @ 15V, 25A; Input Type: Standard; Product: Fga25;	Encapsulation Structure: SMD; Installation: SMD Triode; Working Frequency: Standard; Power Level: Standard; Function: Standard; Structure: Standard; Material: Silicon; Package: to-236-3, Sc-59, Sot-23-3; Mounting Type: Surface Mount; Base Product Number: Bav99; Diode Configuration: 1 Pair Series Connection;	Encapsulation Structure: SMD; Installation: SMD Triode; Working Frequency: Standard; Power Level: Standard; Function: Standard; Structure: Standard; Material: Silicon;	Encapsulation Structure: Plastic Sealed Transistor; Installation: Plug-in Triode; Working Frequency: High Frequency; Power Level: High Power; Function: Power Triode; Structure: NPN; Material: Silicon; Power Dissipation: 555000 MW; Breakdown Voltage (Collector-Emitter): 1200 V; Reverse Recovery Time: 65 Ns; Rated Power (Max): 555 W; Operating Temperature: -55~ 175(Celsius); Encapsulation: to-247; Packing: Tube;	Encapsulation Structure: Plastic Sealed Transistor; Installation: SMD Triode; Working Frequency: High Frequency; Power Level: Medium Power; Structure: PNP; Material: Silicon;
Supplier Name	Shenzhen Jin Da Peng Technology Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	Yangjiang RUI XIAO Enterprise Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.
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