New Bc817-25 6b Sot-23 45V / 500mA SMD Transistor NPN pictures & photos

New Bc817-25 6b Sot-23 45V / 500mA SMD Transistor NPN

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Price

Min. Order Reference FOB Price

500 Pieces US$0.079 - 0.15 / Piece

Sepcifications

Certification RoHS, CE
Encapsulation Structure Plastic Sealed Transistor
Installation SMD Triode
Working Frequency Low Frequency
Power Level Small Power
Function Photosensitive, Darlington Tube, Power Triode
Structure NPN
Transport Package Rell Packing
Origin China
Transistor Polarity NPN
Product Description Power Transistor
Product Number Bc817-25
Description Bjt Sot-23 45V 800mA
Detailed Description (Bjt) Transistor NPN 45V 800mA 100MHz
Subcategory Transistors
Category Transistor
Transistor Type NPN
Power - Max 310MW

Product Description

Product Attributes Package Tape &Reel (TR) Transistor Type NPN Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V Frequency - Transition 100MHz Operating Temperature -55°C ~ ...

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Shenzhen Jin Da Peng Technology Co., Ltd.

Diamond Member Since 2016

Audited Supplier

Rating & Reviews: 5.0/5.0

(1 Reviews)

Business Type Trading Company
Main Products Transistor, IC, Rectifier
Number of Employees 18
Year of Establishment 2008-09-17
Plant Area 250 square meters
Average Lead Time Peak Season Lead Time: one month
Off Season Lead Time: within 15 workdays

SMD Transistor Comparison

	New Bc817-25 6b Sot-23 45V / 500mA SMD Transistor NPN Contact Now	Quick View 2301 Transistor 20V P-Channel Mosfet Contact Now	Quick View Mmbt3904 NPN Plastic Encapsulate Transistors Contact Now	New Original Electronic Component Mosfet Contact Now	New Original Electronic Component Transistor Contact Now

Transaction Info
	New Bc817-25 6b Sot-23 45V / 500mA SMD Transistor NPN Contact Now	Quick View 2301 Transistor 20V P-Channel Mosfet Contact Now	Quick View Mmbt3904 NPN Plastic Encapsulate Transistors Contact Now	New Original Electronic Component Mosfet Contact Now	New Original Electronic Component Transistor Contact Now
Price	US$0.079 - 0.15 / Piece	US$0.30 / Piece	US$0.30 / Piece	US$0.30 / Piece	US$0.03 / Piece
Min Order	500 Pieces	20,000 Pieces	20,000 Pieces	2,500 Pieces	3,000 Pieces
Payment Terms	T/T, PayPal, Western Union	T/T, Western Union, Small-amount payment	T/T, Western Union, Small-amount payment	LC, T/T, PayPal, Western Union	LC, T/T, PayPal, Western Union
Quality Control
Product Certification	RoHS, CE	RoHS	RoHS	-	RoHS
Management System Certification	-	-	-	-	-
Trade Capacity
Export Markets	South America, Europe, Southeast Asia/ Mideast, South Asia	North America, South America, Europe, Southeast Asia/ Mideast	North America, South America, Europe, Southeast Asia/ Mideast	South America, Eastern Europe, Southeast Asia, Mid East, Western Europe	South America, Eastern Europe, Southeast Asia, Mid East, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	-	-	-	-	-
Average Lead Time	Peak Season Lead Time: one month Off Season Lead Time: within 15 workdays	Peak Season Lead Time: one month Off Season Lead Time: within 15 workdays	Peak Season Lead Time: one month Off Season Lead Time: within 15 workdays	Peak Season Lead Time: one month Off Season Lead Time: within 15 workdays	Peak Season Lead Time: one month Off Season Lead Time: within 15 workdays
Product Attributes
Specification	Encapsulation Structure: Plastic Sealed Transistor; Installation: SMD Triode; Working Frequency: Low Frequency; Power Level: Small Power; Function: Photosensitive, Darlington Tube, Power Triode; Structure: NPN; Transistor Polarity: NPN; Product Description: Power Transistor; Product Number: Bc817-25; Description: Bjt Sot-23 45V 800mA; Detailed Description: (Bjt) Transistor NPN 45V 800mA 100MHz; Subcategory: Transistors; Category: Transistor; Transistor Type: NPN; Power - Max: 310MW;	Encapsulation Structure: Chip Transistor; Installation: SMD Triode; Working Frequency: Low Frequency; Power Level: Small Power; Structure: PNP; Material: Silicon; Marking: S1; Application-1: DC/DC Converter; Application-2: Load Switch for Portable Devices; Application-3: Batter Switch; I: 2.3A; RDS(on): 110mΩ@-4.5V; RDS(on) .: 140mΩ@-2.5V; Storage Temperature: -55~+150'c; Junction Temperature: 150'c;	Encapsulation Structure: Plastic Sealed Transistor; Installation: SMD Triode; Power Level: Medium Power; Structure: NPN; Marking: 1am; Vcbo: 60V; Vceo: 40V; IC: 200mA; PC: 200MW; Junction Temperature: 150'c; Storage Temperature: -55~+150'c; MOQ: 20000PCS; Lead Time: 2 Weeks;	Installation Style: SMD/SMT; Encapsulation: Sot-223-3; Transistor Polarity: N-Channel; Channel: 1 Channel; Vds Drain Source Breakdown Voltage: 60 V; ID Continuous Drain Current: 2.7 a; RDS on - Drain Source Conduction Resista: 200 Mohms; Vgs - Gate Source Voltage: - 20 V, + 20 V; Vgs Th Gate Source Threshold Voltage: 4 V; Qg Gate Charge: 11 Nc; Operation Temperature: -55ºC~+150ºC; Pd Power Dissipation: 3.1 W;	Encapsulation: Sot-23-3; Transistor Polarity: NPN; Collector Base Voltage Vcbo: 180V; Emitter Base Voltage Vebo: 6V; Collector Emitter Saturation Voltage: 200mv; Maximum DC Collector Current: 600mA; Pd Power Dissipation: 225MW; Operating Temperature: -55ºC~+150ºC;
Supplier Name	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Topmay Electronic Co., Ltd.	Shenzhen Topmay Electronic Co., Ltd.	Hangzhou Electric Driving Technology Co., Ltd.	Hangzhou Electric Driving Technology Co., Ltd.
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