Ipw60r160c6 6r160c6 23.8A 600V 0.16ohm N-Channel Mosfet

About this Item
Details
Company Profile

Price

Min. Order Reference FOB Price

50 Pieces US$2.019-3.97 / Piece

Sepcifications

  • Certification RoHS, CE, ISO, CCC
  • Function Transistor Mosfet
  • Encapsulation Structure Chip Transistor
  • Power Level High Power
  • Material Silicon
  • Transport Package Carton
  • Specification Width: 5.21 mm Length: 16.13 mm
  • Origin China
  • Subcategory Mosfets
  • Series Coolmos C6
  • Product Type Mosfet
  • Product Number Ipw60r160c6
  • Transistor Type 1 N-Channel
  • Product Mosfet
  • Ds Breakdown Voltage-Min 600 V
  • Pulsed Drain Current-Max (Idm) 70 a
  • Description 23.8A, 600V, 0.16ohm, N-Channel
  • Power Dissipation-Max (ABS) 176 W
  • Configuration Single with Built-in Diode

Product Description

Notice:All price can be negotiate.Plz Contact us to get the best price! Product Description • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to use/drive • JEDEC1) qualified, Pb-free plating, ...

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Transistor Comparison
Transaction Info
Price US $ 2.019-3.97/ Piece US $ 0.0099-0.0168/ Piece US $ 0.17-0.98/ Piece US $ 0.0099-0.0168/ Piece US $ 0.0099-0.0168/ Piece
Min Order 50 Pieces 5000 Pieces 1 Pieces 5000 Pieces 5000 Pieces
Trade Terms - - - - -
Payment Terms L/C, T/T, D/P, Western Union, Paypal T/T, D/P, Western Union, Paypal, Money Gram L/C, T/T, D/P, Western Union, Paypal, Money Gram T/T, D/P, Western Union, Paypal, Money Gram T/T, D/P, Western Union, Paypal, Money Gram
Quality Control
Product Certification RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC
Management System Certification - - - - -
Trade Capacity
Export Markets South America, Europe, Southeast Asia/ Mideast, Others Domestic North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe Domestic Domestic
Annual Export Revenue - - - - -
Business Model - - OEM, ODM - -
Average Lead Time Off-season: within 15 Day(s)
Peak-season: within 15 Day(s)
- Off-season: within 15 Day(s)
Peak-season: within 15 Day(s)
- -
Product Attributes
Specification
Function: Transistor Mosfet;
Encapsulation Structure: Chip Transistor;
Power Level: High Power;
Material: Silicon;
Subcategory: Mosfets;
Series: Coolmos C6;
Product Type: Mosfet;
Product Number: Ipw60r160c6;
Transistor Type: 1 N-Channel;
Product: Mosfet;
Ds Breakdown Voltage-Min: 600 V;
Pulsed Drain Current-Max (Idm): 70 a;
Description: 23.8A, 600V, 0.16ohm, N-Channel;
Power Dissipation-Max (ABS): 176 W;
Configuration: Single with Built-in Diode;
Shape: ST;
Shielding Type: Remote Cut-Off Shielding Tube;
Cooling Method: Naturally Cooled Tube;
Function: Protection;
Working Frequency: No;
Structure: Planar;
Encapsulation Structure: Plastic Sealed Transistor;
Power Level: High Power;
Material: Silicon;
Pppm: 400W;
Ifsm(Uni): 60A;
Case: SMA;
Stand-off Voltage: 18V;
Maximum Peak Pulse Current: 13.7A;
Function: Microwave Transistor, Switch Transistor;
Working Frequency: Low Frequency;
Structure: Planar;
Encapsulation Structure: TO-251J-3L/TO-251D-3L;
Material: Silicon;
Features1: Extremely Low Switching Loss;
Features2: Excellent Stability and Uniformity;
Features3: 100% Avalanche Tested;
Features4: Built-in ESD Diode;
Application1: Switch Mode Power Supply (SMPS);
Application2: Power Factor Correction (Pfc);
Application3: Uninterruptible Power Supply (UPS);
Application4: AC to DC Converters;
Application5: Telecom;
Application6: TV Power & LED Lighting Power;
Shape: ST;
Shielding Type: Remote Cut-Off Shielding Tube;
Cooling Method: Naturally Cooled Tube;
Function: Protection;
Working Frequency: No;
Structure: Planar;
Encapsulation Structure: Plastic Sealed Transistor;
Power Level: High Power;
Material: Silicon;
Pppm: 400W;
Ifsm(Uni): 60A;
Case: SMA;
Stand-off Voltage: 33V;
Maximum Peak Pulse Current: 7.5A;
Shape: ST;
Shielding Type: Remote Cut-Off Shielding Tube;
Cooling Method: Naturally Cooled Tube;
Function: Protection;
Working Frequency: No;
Structure: Planar;
Encapsulation Structure: Plastic Sealed Transistor;
Power Level: High Power;
Material: Silicon;
Pppm: 400W;
Ifsm(Uni): 60A;
Case: SMA;
Stand-off Voltage: 48V;
Maximum Peak Pulse Current: 5.2A;
Supplier Name

Shenzhen Jin Da Peng Technology Co., Ltd.

China Supplier - Diamond Member Audited Supplier

Guangdong Juxing Electronics Technology Co., Ltd

China Supplier - Diamond Member Audited Supplier

Dongguan Merry Electronic Co., Ltd.

China Supplier - Diamond Member Audited Supplier

Guangdong Juxing Electronics Technology Co., Ltd

China Supplier - Diamond Member Audited Supplier

Guangdong Juxing Electronics Technology Co., Ltd

China Supplier - Diamond Member Audited Supplier