IGBT Transistor
US$0.08 - 0.16 / Piece
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What is Original New IGBT Transistors K40h603 Ikw40n60h3

About this Item
Details
Company Profile

Price

Min. Order Reference FOB Price

10 Pieces US$0.08 - 0.16 / Piece

Sepcifications

  • Certification RoHS
  • Encapsulation Structure Chip Transistor
  • Installation Plug-in Triode
  • Working Frequency High Frequency
  • Power Level High Power
  • Function Photosensitive, Darlington Tube, Power Triode, IGBT
  • Structure Alloy
  • Material Iron and Plastic
  • Transport Package Tube
  • Specification iron and plastic
  • Trademark original
  • Origin China
  • Collector-Emitter Voltage-Max 600V
  • Product Type IGBT Transistors
  • Category IGBT
  • Installation Style Through Hole
  • Gate-Emitter Voltage-Max 20 V
  • Transistor Application Power Control
  • Subcategory Transistor
  • Gate-Emitter Thr Voltage-Max 5.7V
  • Samacsys Description IGBT Transistors 600V 40A 306W
  • Package Tube
  • Current - Collector (IC) (Max) 80 a

Product Description

Product Paramenters Description: IGBT Transistors 600V 40A 306W Mounting Style: Through Hole Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 1.95 V Company Profile Product packaging FAQ

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IGBT Transistor Comparison
Transaction Info
Price US$0.08 - 0.16 / Piece US$0.0001 - 0.10 / Piece US$0.0001 - 0.10 / Piece US$0.0001 - 0.10 / Piece US$0.0001 - 0.10 / Piece
Min Order 10 Pieces 1 Piece 1 Piece 1 Piece 1 Piece
Payment Terms T/T, PayPal, Western Union LC, T/T LC, T/T LC, T/T LC, T/T
Quality Control
Product Certification RoHS RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC
Management System Certification - - - - -
Trade Capacity
Export Markets South America, Europe, Southeast Asia/ Mideast, South Asia North America, South America, Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea), Australia North America, South America, Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea), Australia North America, South America, Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea), Australia North America, South America, Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea), Australia
Annual Export Revenue - - - - -
Business Model - Own Brand, ODM Own Brand, ODM Own Brand, ODM Own Brand, ODM
Average Lead Time Peak Season Lead Time: one month
Off Season Lead Time: within 15 workdays
Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays
Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays
Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays
Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays
Product Attributes
Specification
Encapsulation Structure: Chip Transistor;
Installation: Plug-in Triode;
Working Frequency: High Frequency;
Power Level: High Power;
Function: Photosensitive, Darlington Tube, Power Triode, IGBT;
Structure: Alloy;
Material: Iron and Plastic;
Collector-Emitter Voltage-Max: 600V;
Product Type: IGBT Transistors;
Category: IGBT;
Installation Style: Through Hole;
Gate-Emitter Voltage-Max: 20 V;
Transistor Application: Power Control;
Subcategory: Transistor;
Gate-Emitter Thr Voltage-Max: 5.7V;
Samacsys Description: IGBT Transistors 600V 40A 306W;
Package: Tube;
Current - Collector (IC) (Max): 80 a;
Encapsulation Structure: Plastic Sealed Transistor;
Installation: SMD Triode;
Working Frequency: High Frequency;
Power Level: Medium Power;
Function: Power Triode;
Structure: PNP;
Material: Silicon;
Encapsulation Structure: Plastic Sealed Transistor;
Installation: SMD Triode;
Working Frequency: High Frequency;
Power Level: Medium Power;
Function: Power Triode;
Structure: PNP;
Material: Silicon;
Encapsulation Structure: Plastic Sealed Transistor;
Installation: SMD Triode;
Working Frequency: High Frequency;
Power Level: Medium Power;
Function: Power Triode;
Structure: PNP;
Material: Silicon;
Encapsulation Structure: Plastic Sealed Transistor;
Installation: SMD Triode;
Working Frequency: High Frequency;
Power Level: Medium Power;
Function: Power Triode;
Structure: PNP;
Material: Silicon;
Supplier Name

Shenzhen Jin Da Peng Technology Co., Ltd.

Diamond Member Audited Supplier

ShenZhen Nova Semiconductor Co., Ltd.

Diamond Member Audited Supplier

ShenZhen Nova Semiconductor Co., Ltd.

Diamond Member Audited Supplier

ShenZhen Nova Semiconductor Co., Ltd.

Diamond Member Audited Supplier

ShenZhen Nova Semiconductor Co., Ltd.

Diamond Member Audited Supplier