| Specification |
Encapsulation Structure: Chip Transistor;
Installation: SMD Triode;
Working Frequency: Low Frequency;
Power Level: High Power;
Function: Photosensitive, Darlington Tube, Power Triode, Switching Triode;
Structure: Diffusion;
Material: Silicon;
Operating Temperature Range: -40°c ~ +85°c;
Storage Temperature: -65°c ~ +150°c;
ESD Protection: ≥2000V;
Mtbf: >100000h;
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Storage Junction Temperature Range: -40-150ºC;
Operating Junction Temperature Range: -40-125ºC;
Repetitive Peak off-State Voltage (Tj=25: 1600 V;
Repetitive Peak Reverse Voltage (Tj=25: 1600 V;
RMS on-State Current (Tc≤100ºC): 40A;
Itsm: 420A/462A;
I2t Value for Fusing (Tp=10ms , Tj=25: 800A2s;
Di/Dt: 100 a/μs;
Peak Gate Current (Tp=20μs , Tj=125: 8A;
Average Gate Power Dissipation (Tj=125: 0.5W;
Peak Gate Power: 40W;
Peak Pulse Voltage: 1200V;
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Storage Junction Temperature Range: -40-150ºC;
Operating Junction Temperature Range: -40-125ºC;
Repetitive Peak off-State Voltage (Tj=25: 1600 V;
Repetitive Peak Reverse Voltage (Tj=25: 1600 V;
RMS on-State Current (Tc≤100ºC): 40A;
Itsm: 420A/462A;
I2t Value for Fusing (Tp=10ms , Tj=25: 800A2s;
Di/Dt: 100 a/μS;
Peak Gate Current (Tp=20μS , Tj=125: 8A;
Average Gate Power Dissipation (Tj=125: 0.5W;
Peak Gate Power: 40W;
Peak Pulse Voltage: 1200V;
|
Storage Junction Temperature Range: -40-150ºC;
Operating Junction Temperature Range: -40-125ºC;
Repetitive Peak off-State Voltage (Tj=25: 1600 V;
Repetitive Peak Reverse Voltage (Tj=25: 1600 V;
RMS on-State Current (Tc≤100ºC): 40A;
Itsm: 420A/462A;
I2t Value for Fusing (Tp=10ms , Tj=25: 800A2s;
Di/Dt: 100 a/μS;
Peak Gate Current (Tp=20μS , Tj=125: 8A;
Average Gate Power Dissipation (Tj=125: 0.5W;
Peak Gate Power: 40W;
Peak Pulse Voltage: 1200V;
|
Storage Junction Temperature Range: -40-150ºC;
Operating Junction Temperature Range: -40-125ºC;
Repetitive Peak off-State Voltage (Tj=25: 1600 V;
Repetitive Peak Reverse Voltage (Tj=25: 1600 V;
RMS on-State Current (Tc≤100ºC): 40A;
Itsm: 420A/462A;
I2t Value for Fusing (Tp=10ms , Tj=25: 800A2s;
Di/Dt: 100 a/μS;
Peak Gate Current (Tp=20μS , Tj=125: 8A;
Average Gate Power Dissipation (Tj=125: 0.5W;
Peak Gate Power: 40W;
Peak Pulse Voltage: 1200V;
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