Electronic Components
US$0.85 - 0.88 / Piece
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About this Item
Details
Company Profile

Price

Min. Order Reference FOB Price

10 Pieces US$0.85 - 0.88 / Piece

Sepcifications

  • Certification RoHS, CE, ISO, CCC
  • Encapsulation Structure Chip Transistor
  • Installation SMD Triode
  • Working Frequency Low Frequency
  • Power Level High Power
  • Function Photosensitive, Darlington Tube, Power Triode, Switching Triode
  • Structure Diffusion
  • Material Silicon
  • Transport Package /
  • Specification /
  • Trademark /
  • Origin /
  • Operating Temperature Range -40°c ~ +85°c
  • Storage Temperature -65°c ~ +150°c
  • ESD Protection ≥2000V
  • Mtbf >100000h

Product Description

Please enter the title here AFTER-SALES SERVICE The company adhering to the "service first, customer first" business philosophy, core right technology to establish a sound after-sales service process has set up a professional complaint handling team and perfect processing process, received ...

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Electronic Components Comparison
Transaction Info
Price US$0.85 - 0.88 / Piece US$0.05 - 3.00 / Piece US$0.05 - 3.00 / Piece US$0.05 - 3.00 / Piece US$0.05 - 3.00 / Piece
Min Order 10 Pieces 1 Piece 1 Piece 1 Piece 1 Piece
Payment Terms LC, T/T, D/P, PayPal, Western Union, Small-amount payment LC, T/T, D/P, PayPal LC, T/T, D/P, PayPal LC, T/T, D/P, PayPal LC, T/T, D/P, PayPal
Quality Control
Product Certification RoHS, CE, ISO, CCC RoHS, CE, ISO RoHS, CE, ISO RoHS, CE, ISO RoHS, CE, ISO
Management System Certification - ISO9001:2015, ISO45001:2018, ISO14001 ISO9001:2015, ISO45001:2018, ISO14001 ISO9001:2015, ISO45001:2018, ISO14001 ISO9001:2015, ISO45001:2018, ISO14001
Trade Capacity
Export Markets North America, South America, Europe, Southeast Asia/ Mideast, Africa, East Asia(Japan/ South Korea), Australia, Domestic Domestic Domestic Domestic Domestic
Annual Export Revenue - - - - -
Business Model ODM, OEM Own Brand, ODM, OEM Own Brand, ODM, OEM Own Brand, ODM, OEM Own Brand, ODM, OEM
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays
Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays
Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays
Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays
Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays
Product Attributes
Specification
Encapsulation Structure: Chip Transistor;
Installation: SMD Triode;
Working Frequency: Low Frequency;
Power Level: High Power;
Function: Photosensitive, Darlington Tube, Power Triode, Switching Triode;
Structure: Diffusion;
Material: Silicon;
Operating Temperature Range: -40°c ~ +85°c;
Storage Temperature: -65°c ~ +150°c;
ESD Protection: ≥2000V;
Mtbf: >100000h;
Storage Junction Temperature Range: -40-150ºC;
Operating Junction Temperature Range: -40-125ºC;
Repetitive Peak off-State Voltage (Tj=25: 1600 V;
Repetitive Peak Reverse Voltage (Tj=25: 1600 V;
RMS on-State Current (Tc≤100ºC): 40A;
Itsm: 420A/462A;
I2t Value for Fusing (Tp=10ms , Tj=25: 800A2s;
Di/Dt: 100 a/μs;
Peak Gate Current (Tp=20μs , Tj=125: 8A;
Average Gate Power Dissipation (Tj=125: 0.5W;
Peak Gate Power: 40W;
Peak Pulse Voltage: 1200V;
Storage Junction Temperature Range: -40-150ºC;
Operating Junction Temperature Range: -40-125ºC;
Repetitive Peak off-State Voltage (Tj=25: 1600 V;
Repetitive Peak Reverse Voltage (Tj=25: 1600 V;
RMS on-State Current (Tc≤100ºC): 40A;
Itsm: 420A/462A;
I2t Value for Fusing (Tp=10ms , Tj=25: 800A2s;
Di/Dt: 100 a/μS;
Peak Gate Current (Tp=20μS , Tj=125: 8A;
Average Gate Power Dissipation (Tj=125: 0.5W;
Peak Gate Power: 40W;
Peak Pulse Voltage: 1200V;
Storage Junction Temperature Range: -40-150ºC;
Operating Junction Temperature Range: -40-125ºC;
Repetitive Peak off-State Voltage (Tj=25: 1600 V;
Repetitive Peak Reverse Voltage (Tj=25: 1600 V;
RMS on-State Current (Tc≤100ºC): 40A;
Itsm: 420A/462A;
I2t Value for Fusing (Tp=10ms , Tj=25: 800A2s;
Di/Dt: 100 a/μS;
Peak Gate Current (Tp=20μS , Tj=125: 8A;
Average Gate Power Dissipation (Tj=125: 0.5W;
Peak Gate Power: 40W;
Peak Pulse Voltage: 1200V;
Storage Junction Temperature Range: -40-150ºC;
Operating Junction Temperature Range: -40-125ºC;
Repetitive Peak off-State Voltage (Tj=25: 1600 V;
Repetitive Peak Reverse Voltage (Tj=25: 1600 V;
RMS on-State Current (Tc≤100ºC): 40A;
Itsm: 420A/462A;
I2t Value for Fusing (Tp=10ms , Tj=25: 800A2s;
Di/Dt: 100 a/μS;
Peak Gate Current (Tp=20μS , Tj=125: 8A;
Average Gate Power Dissipation (Tj=125: 0.5W;
Peak Gate Power: 40W;
Peak Pulse Voltage: 1200V;
Supplier Name

Shengxinweiye (Shenzhen) Co., Ltd

Diamond Member Audited Supplier

Beijing Fuanshi Technology Co., Ltd.

Gold Member Audited Supplier

Beijing Fuanshi Technology Co., Ltd.

Gold Member Audited Supplier

Beijing Fuanshi Technology Co., Ltd.

Gold Member Audited Supplier

Beijing Fuanshi Technology Co., Ltd.

Gold Member Audited Supplier