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Excellent Conduction and Switching Loss To247-P 800W Ost75n65hsmf 30V Trident Gate Bipolar IGBT pictures & photos

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What is Excellent Conduction and Switching Loss To247-P 800W Ost75n65hsmf 30V Trident Gate Bipolar IGBT

Name: Excellent Conduction and Switching Loss To247-P 800W Ost75n65hsmf 30V Trident Gate Bipolar IGBT
Uploaded: 2023-04-23T10:57:55+08:00
Description: General Description OST75N65HSMF uses advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching

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Price

Purchase Qty. Reference FOB Price

5,000-9,999 Pieces US$3.00

10,000-99,999 Pieces US$2.80

100,000+ Pieces US$2.50

Sepcifications

Manufacturing Technology Discrete Device
Material Element Semiconductor
Type N-type Semiconductor
Package DIP(Dual In-line Package)
Signal Processing Simulation
Application Temperature Measurement
Model PC817
Batch Number 2010+
Brand Orientalsemi
Transport Package Carton
Specification 35x30x37cm
Trademark Orientalsemi
Origin China
Application1 Induction Converters
Application2 Uninterruptible Power Supplies
Features1 Advanced Tgbt TM Technology
Features2 Excellent Conduction and Switching Loss
Features3 Excellent Stability and Uniformity
Features4 Fast and Soft Antiparallel Diode

Product Description

General Description OST75N65HSMF uses advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for mid to high range switching frequency converters. ...

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Shanghai Winture Electric Co., Ltd.

Gold Member Since 2022

Audited Supplier

Business Type Manufacturer/Factory, Trading Company
Main Products Mosfet Transistor Power Semi Conductor, EV Charger Power Mosfet Transistor Power Semi Co, High Voltage Super Junction Mosfet Trans Istor, New Energy Vehicle DC Charging Mosfet Transistor, 5g Base Station Power Supply Mosfet Transistor, Photovoltaic Inverter Mosfet Transistor, Energy Storage Mosfet Transistor, Data Center Server Mosfet Transistor, Industrial Lighting Power Mosfet, DC Charging Power Mosfet Tansistor
Registered Capital 10000000 RMB
Plant Area 501~1000 square meters
Management System Certification ISO 9001, ISO 14001
Average Lead Time Peak Season Lead Time: one month
Off Season Lead Time: 3-6 months

Mosfet Comparison

	Quick View Excellent Conduction and Switching Loss To247-P 800W Ost75n65hsmf 30V Trident Gate Bipolar IGBT Contact Now	Quick View 6-Inch Have Price Advantage Single-Sided Polished (SSP) Silicon Wafer Contact Now	Quick View 2′′3′′4′′6′′8′′12′′ Inch N/P Type Silicon Wafers, Polishing Semiconductor Silicon Wafer Contact Now	Quick View Silicon Wafer Provide Customized High-Quality Semiconductor Chip Etching Silicon Wafer Contact Now	Quick View Silicon Wafer Silicon Wafer 2inch Polished Prime Grade Silicon Wafer Contact Now

Transaction Info
	Quick View Excellent Conduction and Switching Loss To247-P 800W Ost75n65hsmf 30V Trident Gate Bipolar IGBT Contact Now	Quick View 6-Inch Have Price Advantage Single-Sided Polished (SSP) Silicon Wafer Contact Now	Quick View 2′′3′′4′′6′′8′′12′′ Inch N/P Type Silicon Wafers, Polishing Semiconductor Silicon Wafer Contact Now	Quick View Silicon Wafer Provide Customized High-Quality Semiconductor Chip Etching Silicon Wafer Contact Now	Quick View Silicon Wafer Silicon Wafer 2inch Polished Prime Grade Silicon Wafer Contact Now
Price	US $ 2.50-3.00/ Piece	US $ 1.00-100.00/ Piece	US $ 1.00-100.00/ Piece	US $ 1.00-100.00/ Piece	US $ 1.00-100.00/ Piece
Min Order	5000 Pieces	25 Pieces	25 Pieces	25 Pieces	25 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T	T/T, Western Union, Paypal	T/T, Western Union, Paypal	T/T, Western Union, Paypal	T/T, Western Union, Paypal
Quality Control
Management System Certification	ISO 9001, ISO 14001	ISO 9001	ISO 9001	ISO 9001	ISO 9001
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	Own Brand	Own Brand	Own Brand	Own Brand
Average Lead Time	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)
Product Attributes
Specification	Manufacturing Technology: Discrete Device; Material: Element Semiconductor; Type: N-type Semiconductor; Package: DIP(Dual In-line Package); Signal Processing: Simulation; Application: Temperature Measurement; Model: PC817; Batch Number: 2010+; Brand: Orientalsemi; Application1: Induction Converters; Application2: Uninterruptible Power Supplies; Features1: Advanced Tgbt TM Technology; Features2: Excellent Conduction and Switching Loss; Features3: Excellent Stability and Uniformity; Features4: Fast and Soft Antiparallel Diode;	Manufacturing Technology: Optoelectronic Semiconductor; Material: Compound Semiconductor; Type: Intrinsic Semiconductor; Package: SMD; Signal Processing: Analog Digital Composite and Function; Application: LED; Growth Method: CZ and Fz; Orientation: 111 or 100; Resistivity: 0.0005 to 150; Surface: Double Side Polished or Single Side Polished; Dopant: N Type and P Type; Particles: <30 at 0.3um; Bow: < 30 Um; Ttv: <15 Um;	Manufacturing Technology: Optoelectronic Semiconductor; Material: Compound Semiconductor; Type: Intrinsic Semiconductor; Package: SMD; Signal Processing: Analog Digital Composite and Function; Application: LED; Growth Method: CZ and Fz; Orientation: 111 or 100; Resistivity: 0.0005 to 150; Surface: Double Side Polished or Single Side Polished; Dopant: N Type and P Type; Particles: <30 at 0.3um; Bow: < 30 Um; Ttv: <15 Um;	Manufacturing Technology: Optoelectronic Semiconductor; Material: Compound Semiconductor; Type: Intrinsic Semiconductor; Package: SMD; Signal Processing: Analog Digital Composite and Function; Application: LED; Growth Method: CZ and Fz; Orientation: 111 or 100; Resistivity: 0.0005 to 150; Surface: Double Side Polished or Single Side Polished; Dopant: N Type and P Type; Particles: <30 at 0.3um; Bow: < 30 Um; Ttv: <15 Um;	Manufacturing Technology: Optoelectronic Semiconductor; Material: Compound Semiconductor; Type: Intrinsic Semiconductor; Package: SMD; Signal Processing: Analog Digital Composite and Function; Application: LED; Growth Method: CZ and Fz; Orientation: 111 or 100; Resistivity: 0.0005 to 150; Surface: Double Side Polished or Single Side Polished; Dopant: N Type and P Type; Particles: <30 at 0.3um; Bow: < 30 Um; Ttv: <15 Um;
Supplier Name	Shanghai Winture Electric Co., Ltd.	Jiaozuo Commercial Finewin Co., Ltd.	Jiaozuo Commercial Finewin Co., Ltd.	Jiaozuo Commercial Finewin Co., Ltd.	Jiaozuo Commercial Finewin Co., Ltd.
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