Mosfet

US$0.10-1.10 / Piece

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Vds-700V ID-12A RDS (ON) -1.4milliohm Qg-6.7nc EV Charger Solar/UPS Power Mosfet pictures & photos

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What is Vds-700V ID-12A RDS (ON) -1.4milliohm Qg-6.7nc EV Charger Solar/UPS Power Mosfet

Name: Vds-700V ID-12A RDS (ON) -1.4milliohm Qg-6.7nc EV Charger Solar/UPS Power Mosfet
Uploaded: 2024-01-29T12:55:43+08:00
Description: Product Description General Description The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to min

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Price

Min. Order Reference FOB Price

2500 Pieces US$0.10-1.10 / Piece

Sepcifications

Certification RoHS, ISO
Shape ST
Shielding Type Sharp Cutoff Shielding Tube
Cooling Method Air Cooled Tube
Function Switch Transistor
Working Frequency High Frequency
Structure Planar
Encapsulation Structure Chip Transistor
Power Level High Power
Material Silicon
Transport Package Carton
Specification 37*37*29CM
Trademark Orientalsemi

Product Description

Product Description General Description The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. ...

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Shanghai Winture Electric Co., Ltd.

Gold Member Since 2022

Audited Supplier

Business Type Manufacturer/Factory, Trading Company
Main Products Mosfet Transistor Power Semi Conductor, EV Charger Power Mosfet Transistor Power Semi Co, High Voltage Super Junction Mosfet Trans Istor, New Energy Vehicle DC Charging Mosfet Transistor, 5g Base Station Power Supply Mosfet Transistor, Photovoltaic Inverter Mosfet Transistor, Energy Storage Mosfet Transistor, Data Center Server Mosfet Transistor, Industrial Lighting Power Mosfet, DC Charging Power Mosfet Tansistor
Registered Capital 10000000 RMB
Plant Area 501~1000 square meters
Management System Certification ISO 9001, ISO 14001
Average Lead Time Peak Season Lead Time: one month
Off Season Lead Time: 3-6 months

Mosfet Comparison

	Quick View Vds-700V ID-12A RDS (ON) -1.4milliohm Qg-6.7nc EV Charger Solar/UPS Power Mosfet Contact Now	Huf75545s3st N-Channel Mosfet Transistor 80 V 75A (Tc) 270W (Tc) Surface Mount D² Pak Huf75545 Contact Now	Irf7240pbf P-Channel Mosfet Transistor 40 V 10.5A (Ta) 2.5W (Ta) Surface Mount 8-So Irf7240trpbf Irf7240 Contact Now	Quick View High Quality Air Cooled Triode 3cx6000A7 Vacuum Tube Used as Oscillator (YU-148) Contact Now	PC367n2j000f Optoisolator Transistor Output 3750vrms 1 Channel 4-Mini-Flat PC367n2 PC367 Contact Now

Transaction Info
	Quick View Vds-700V ID-12A RDS (ON) -1.4milliohm Qg-6.7nc EV Charger Solar/UPS Power Mosfet Contact Now	Huf75545s3st N-Channel Mosfet Transistor 80 V 75A (Tc) 270W (Tc) Surface Mount D² Pak Huf75545 Contact Now	Irf7240pbf P-Channel Mosfet Transistor 40 V 10.5A (Ta) 2.5W (Ta) Surface Mount 8-So Irf7240trpbf Irf7240 Contact Now	Quick View High Quality Air Cooled Triode 3cx6000A7 Vacuum Tube Used as Oscillator (YU-148) Contact Now	PC367n2j000f Optoisolator Transistor Output 3750vrms 1 Channel 4-Mini-Flat PC367n2 PC367 Contact Now
Price	US $ 0.10-1.10/ Piece	US $ 0.01-1.00/ Piece	US $ 0.01-1.00/ Piece	US $ 1,177.00-1,477.00/ Piece	US $ 0.01-1.00/ Piece
Min Order	2500 Pieces	1 Pieces	1 Pieces	1 Pieces	1 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T	T/T, Western Union, Paypal	T/T, Western Union, Paypal	L/C, T/T, Western Union, Paypal, Money Gram	T/T, Western Union, Paypal
Quality Control
Product Certification	RoHS, ISO	-	-	ISO	-
Management System Certification	ISO 9001, ISO 14001	GMP	GMP	-	GMP
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Europe, Southeast Asia/ Mideast, Africa, East Asia(Japan/ South Korea), Australia, Domestic	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	OEM	OEM	-	OEM
Average Lead Time	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)	-	-	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	-
Product Attributes
Specification	Shape: ST; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Function: Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon;	Shape: SMD; Function: Mosfet; Fet Type: N-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 80 V; Continuous Drain (ID) @ 25°c: 75A (Tc); Drive Voltage (Max RDS on, Min RDS on): 10V; RDS on (Max) @ ID, Vgs: 10mohm @ 75A, 10V; Vgs(Th) (Max) @ ID: 4V @ 250µa; Gate Charge (Qg) (Max) @ Vgs: 235 Nc @ 20 V; Vgs (Max): ±20V; Input Capacitance (CISS) (Max) @ Vds: 3750 PF @ 25 V; Power Dissipation (Max): 270W (Tc); Operating Temperature: -55°c ~ 175°c (Tj); Mounting Type: to-263-3, D²pak (2 Leads + Tab), to-263ab; Supplier Device Package: D²pak (to-263); Base Product Number: Huf75545;	Shape: SMD; Function: Mosfet; Fet Type: P-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 40 V; Continuous Drain (ID) @ 25°c: 10.5A (Ta); Drive Voltage (Max RDS on, Min RDS on): 4.5V, 10V; RDS on (Max) @ ID, Vgs: 15mohm @ 10.5A, 10V; Vgs(Th) (Max) @ ID: 3V @ 250µa; Gate Charge (Qg) (Max) @ Vgs: 110 Nc @ 10 V; Vgs (Max): ±20V; Input Capacitance (CISS) (Max) @ Vds: 9250 PF @ 25 V; Power Dissipation (Max): 2.5W (Ta); Operating Temperature: -55°c ~ 150°c (Tj); Mounting Type: 8-So; Supplier Device Package: 8-Soic; Base Product Number: Irf7240;	Shape: Metal Porcelain Tube; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Water Cooled Tube; Function: High Frequency Generator for Oscillator; Working Frequency: High Frequency; Structure: Metal- Ceramic; Encapsulation Structure: Metal- Ceramic; Power Level: High Power; Material: Metal- Ceramic; Frequency: 108 MHz Max.; Filament Voltage: 7 +/- 0.35V; Filament Current: 78+/-3 a; Output Power: 10kw;	Shape: SMD; Function: Optoisolator;
Supplier Name	Shanghai Winture Electric Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	Beijing Jenerator Electronic Co.,Ltd	ShenZhen Nova Semiconductor Co., Ltd.
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