Silicon Carbide Substrate 4/6 Inch P Grade 4h-N Sic Seed Wafer pictures & photos

Silicon Carbide Substrate 4/6 Inch P Grade 4h-N Sic Seed Wafer

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Price

Purchase Qty. Reference FOB Price

20-99 Pieces US$205.00

100-499 Pieces US$198.00

500-999 Pieces US$192.00

1,000+ Pieces US$185.00

Sepcifications

Manufacturing Technology Chemical Vapor Deposition
Material Sic
Type N-type Semiconductor
Package Custom
Signal Processing No
Application Semiconductor
Model 4h-N
Batch Number No
Brand No
Transport Package Foam Bag
Specification 4 6 inches
Trademark No
Origin China
Grade P & D Grade
Spec 4 Inches 6 Inches etc
Raw Material 6n Sic
Types N or Si

Product Description

Product Details Silicon carbide (SiC), is known as the core material of the third generation semiconductor. It has many outstanding characteristics, such ashigh voltage, high frequency, high bandwidth,high thermal conductivity, high breakdown electric field and electron saturation rate. ...

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Hebei Baotong New Material Technology Co., Ltd.

Gold Member Since 2023

Audited Supplier

Business Type Manufacturer/Factory
Main Products Silicon Carbide, Boron Carbide, Silicon Carbide Ceramic Casting, Boron Carbdie Ceramic Casting, Bulletproof Plate, Silicon Carbide Wafer, Silicon′ Carbide Graunlated Powder, Boron Carbide Graunlated Powder, Boron Nitride
Plant Area 101~500 square meters
Average Lead Time Peak Season Lead Time: one month
Off Season Lead Time: within 15 workdays

Sic Wafer Comparison

	Silicon Carbide Substrate 4/6 Inch P Grade 4h-N Sic Seed Wafer Contact Now	Quick View Fp100r12n2t7 IGBT Module with Copper Base Plate 2.5 Kv AC 1min Insulation Contact Now	Quick View Fz250r65ke3 6500V 250A Single Switch IGBT Module with IGBT 3 and Emitter Controlled 3 Diode Contact Now	Quick View Fz250r65ke3 IGBT of Extended Storage Temperature Down to T (stg) = -55° C Contact Now	Quick View Fp100r12n2t7 1200 V, 100 a Pim IGBT Module Emitter Controlled 7 Diode and Ntc Contact Now

Transaction Info
	Silicon Carbide Substrate 4/6 Inch P Grade 4h-N Sic Seed Wafer Contact Now	Quick View Fp100r12n2t7 IGBT Module with Copper Base Plate 2.5 Kv AC 1min Insulation Contact Now	Quick View Fz250r65ke3 6500V 250A Single Switch IGBT Module with IGBT 3 and Emitter Controlled 3 Diode Contact Now	Quick View Fz250r65ke3 IGBT of Extended Storage Temperature Down to T (stg) = -55° C Contact Now	Quick View Fp100r12n2t7 1200 V, 100 a Pim IGBT Module Emitter Controlled 7 Diode and Ntc Contact Now
Price	US $ 185.00-205.00/ Piece	US $ 63.00-78.00/ Piece	US $ 1,000.00-1,050.00/ Piece	US $ 1,000.00-1,050.00/ Piece	US $ 63.00-78.00/ Piece
Min Order	20 Pieces	15 Pieces	1 Pieces	1 Pieces	15 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, CNY Account	L/C, T/T, D/P, Western Union, Paypal, Money Gram, Xtransfer	L/C, T/T, D/P, Western Union, Paypal, Money Gram, Xtransfer	L/C, T/T, D/P, Western Union, Paypal, Money Gram, Xtransfer	L/C, T/T, D/P, Western Union, Paypal, Money Gram, Xtransfer
Quality Control
Management System Certification	-	ISO 9001, ISO 14001	ISO 9001, ISO 14001	ISO 9001, ISO 14001	ISO 9001, ISO 14001
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	ODM	OEM, ODM	OEM, ODM	OEM, ODM	OEM, ODM
Average Lead Time	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)
Product Attributes
Specification	Manufacturing Technology: Chemical Vapor Deposition; Material: Sic; Type: N-type Semiconductor; Package: Custom; Signal Processing: No; Application: Semiconductor; Model: 4h-N; Batch Number: No; Brand: No; Grade: P & D Grade; Spec: 4 Inches 6 Inches etc; Raw Material: 6n Sic; Types: N or Si;	Manufacturing Technology: Optoelectronic Semiconductor; Material: Element Semiconductor; Type: N-type Semiconductor; Package: PGA(Pin Grid Array Package); Signal Processing: Analog Digital Composite and Function; Application: Temperature Measurement; Model: ST; Batch Number: 2010+; Brand: Infineon; Voltage: 1200V; Configuration: Dual; IC(Nom) / If(Nom): 100 a; Technology: IGBT7;	Manufacturing Technology: Optoelectronic Semiconductor; Material: Element Semiconductor; Type: N-type Semiconductor; Package: PGA(Pin Grid Array Package); Signal Processing: Analog Digital Composite and Function; Application: Motor Control and Drives,Traction; Model: Fz250r65ke3; Batch Number: 2022+; Brand: Infineon; Voltage: 6500V; Configuration: Single; IC(Nom) / If(Nom): 250 a; Technology: IGBT3;	Manufacturing Technology: Optoelectronic Semiconductor; Material: Element Semiconductor; Type: N-type Semiconductor; Package: PGA(Pin Grid Array Package); Signal Processing: Analog Digital Composite and Function; Application: Wind-Power Converters,UPS,Traction; Model: Fz250r65ke3; Batch Number: 2022+; Brand: Infineon; Voltage: 6500V; Configuration: Single; IC(Nom) / If(Nom): 250 a; Technology: IGBT3;	Manufacturing Technology: Optoelectronic Semiconductor; Material: Element Semiconductor; Type: N-type Semiconductor; Package: PGA(Pin Grid Array Package); Signal Processing: Analog Digital Composite and Function; Application: Temperature Measurement; Model: ST; Batch Number: 2010+; Brand: Infineon; Voltage: 1200V; Configuration: Dual; IC(Nom) / If(Nom): 100 a; Technology: IGBT7;
Supplier Name	Hebei Baotong New Material Technology Co., Ltd.	Shenzhen Botong Electric Co., Ltd.	Shenzhen Botong Electric Co., Ltd.	Shenzhen Botong Electric Co., Ltd.	Shenzhen Botong Electric Co., Ltd.
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