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FF200r33kf2c Infineon IGBT Module Total Power Dissipation 2, 20kw pictures & photos

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What is FF200r33kf2c Infineon IGBT Module Total Power Dissipation 2, 20kw

Name: FF200r33kf2c Infineon IGBT Module Total Power Dissipation 2, 20kw
Uploaded: 2023-09-01T11:07:20+08:00
Description: MODEL: FF200R33KF2C FF400R33KF2C FF450R33T3E3 Infineon IGBT Discretes, Press Pack, power modules and even stack solutions in different voltage- and current classes. Our IGBT product selection pro

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Price

Min. Order Reference FOB Price

4 Pieces US$580.00-620.00 / Piece

Sepcifications

Manufacturing Technology Optoelectronic Semiconductor
Material Element Semiconductor
Type N-type Semiconductor
Package PGA(Pin Grid Array Package)
Signal Processing Analog Digital Composite and Function
Model FF200r33kf2c
Batch Number 2022+
Brand Infineon
Transport Package Carton
Trademark Infineon
Origin Germany
Configuration Dual
IC(Nom) / If(Nom) 200 a
Technology IGBT4

Product Description

MODEL: FF200R33KF2C FF400R33KF2C FF450R33T3E3 Infineon IGBT Discretes, Press Pack, power modules and even stack solutions in different voltage- and current classes. Our IGBT product selection provides a broad variety of different devices. These products address a wide range of ...

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Shenzhen Botong Electric Co., Ltd.

Gold Member Since 2023

Audited Supplier

Business Type Trading Company
Business Range Computer Products, Consumer Electronics, Electrical & Electronics, Industrial Equipment & Components, Instruments & Meters
Main Products Semiconductor, IGBT Module, Diode, Triode
Management System Certification ISO 9001, ISO 14001
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Mid East, Eastern Asia, Western Europe
Average Lead Time Peak Season Lead Time: one month
Off Season Lead Time: within 15 workdays

IGBT Comparison

	Quick View FF200r33kf2c Infineon IGBT Module Total Power Dissipation 2, 20kw Contact Now	Quick View Double Polished Substrate N Type Si Type Sic Wafer Silicon Carbide Wafer Semiconductor Contact Now	Quick View 4 Inch 6 Inch P Grade Silicon Carbide Ingot Sic Ingot Contact Now	Quick View 36A 1200V N-Channel Sic Power Mosfet Dhc1m080120W to-247 Contact Now	Quick View 650V 6A Sic Schottky Barrier Diode Sicf0665 to-220-2L Contact Now

Transaction Info
	Quick View FF200r33kf2c Infineon IGBT Module Total Power Dissipation 2, 20kw Contact Now	Quick View Double Polished Substrate N Type Si Type Sic Wafer Silicon Carbide Wafer Semiconductor Contact Now	Quick View 4 Inch 6 Inch P Grade Silicon Carbide Ingot Sic Ingot Contact Now	Quick View 36A 1200V N-Channel Sic Power Mosfet Dhc1m080120W to-247 Contact Now	Quick View 650V 6A Sic Schottky Barrier Diode Sicf0665 to-220-2L Contact Now
Price	US $ 580.00-620.00/ Piece	US $ 585.00-605.00/ Piece	US $ 7,930.00-7,980.00/ Piece	US $ 0.01-1.50/ Piece	US $ 0.01-1.50/ Piece
Min Order	4 Pieces	20 Pieces	2 Pieces	5000 Pieces	5000 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T, D/P, Western Union, Paypal, Money Gram, Xtransfer	T/T, Paypal, CNY Account	T/T, Paypal, CNY Account	L/C, T/T	L/C, T/T
Quality Control
Management System Certification	ISO 9001, ISO 14001	-	-	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)
Annual Export Revenue	-	-	-	-	-
Business Model	OEM, ODM	ODM	ODM	Own Brand	Own Brand
Average Lead Time	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)
Product Attributes
Specification	Manufacturing Technology: Optoelectronic Semiconductor; Material: Element Semiconductor; Type: N-type Semiconductor; Package: PGA(Pin Grid Array Package); Signal Processing: Analog Digital Composite and Function; Model: FF200r33kf2c; Batch Number: 2022+; Brand: Infineon; Configuration: Dual; IC(Nom) / If(Nom): 200 a; Technology: IGBT4;	Manufacturing Technology: Chemical Vapor Deposition; Material: Sic; Type: N-type Semiconductor; Package: Custom; Signal Processing: No; Application: Semiconductor; Model: 4h-N; Batch Number: No; Brand: No; Grade: P & D Grade; Spec: 4 Inches 6 Inches etc; Raw Material: 6n Sic; Types: N or Si;	Grade: P & D Grade; Spec: 4 Inches 6 Inches etc; Raw Material: 6n Sic; Types: N or Si;	Manufacturing Technology: Discrete Device; Material: Sic; Type: N-type Semiconductor; Package: to-247; Application: Solar Inverters; Model: Dhc1m080120W; Batch Number: 2022; Brand: Wxdh; Voltage: 1200V; Current: 36A;	Manufacturing Technology: Discrete Device; Material: Silicon; Type: N-type Semiconductor; Package: to-220f; Application: Switching Power Supply, General Purpose; Model: Sicf0665; Batch Number: 2023; Brand: Wxdh; Voltage: 650V; Current: 6A;
Supplier Name	Shenzhen Botong Electric Co., Ltd.	Hebei Baotong New Material Technology Co., Ltd.	Hebei Baotong New Material Technology Co., Ltd.	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd
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