Mit300ta12hr1 1200V/300A 2 in One-Package IGBT Modules Video

Name: Mit300ta12hr1 1200V/300A 2 in One-Package IGBT Modules
Uploaded: 2023-08-30T10:13:48+08:00
Description: MODEL: MIT300TA12HR1 Equivalent Circuit Schematic FEATURES © 1200V300A,VCE(sat)(typ.)=2.30V © SPT(Soft Punch Through)technology © Lower losses © Higher system efficiency ©

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Price

Min. Order Reference FOB Price

10 Pieces US$50.00-70.00 / Piece

Sepcifications

Manufacturing Technology Optoelectronic Semiconductor
Material Element Semiconductor
Type N-type Semiconductor
Package PGA(Pin Grid Array Package)
Signal Processing Analog Digital Composite and Function
Application Welding, Inductive Heating, UPS
Model Mit300ta12hr1
Batch Number 2022+
Transport Package Carton
Origin China
Maximum IGBT Junction Temperature 150ºC
Continuous Gate to Emitter Voltage ±30V
Collector to Emitter Voltage 1200V
Pulse Collector Current 600A
Maximum Power Dissipation(IGBT) 1140W

Product Description

MODEL: MIT300TA12HR1 Equivalent Circuit Schematic FEATURES © 1200V300A,VCE(sat)(typ.)=2.30V © SPT(Soft Punch Through)technology © Lower losses © Higher system efficiency © Excellent short-circuit capability © Square RBSOA Typical Applications ...

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Shenzhen Botong Electric Co., Ltd.

Gold Member Since 2023

Audited Supplier

Business Type Trading Company
Business Range Computer Products, Consumer Electronics, Electrical & Electronics, Industrial Equipment & Components, Instruments & Meters
Main Products Semiconductor, IGBT Module, Diode, Triode
Management System Certification ISO 9001, ISO 14001
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Mid East, Eastern Asia, Western Europe
Average Lead Time Peak Season Lead Time: one month
Off Season Lead Time: within 15 workdays

IGBT Comparison

	Quick View Mit300ta12hr1 1200V/300A 2 in One-Package IGBT Modules Contact Now	Quick View Professional Supplier Silicon Wafer CZ Fz for Semiconductor Devices Contact Now	Quick View Single Side Polished P Type Single Crystal 2/4/6/8/12 Inch Silicon Wafer Contact Now	Quick View Semiconductor Application Monocrystalline 4inch Fz Silicon Contact Now	Quick View Silicon Wafer (single side polished) P-Type, 3 Inch Diameter and 0.5 mm Thickness Contact Now

Transaction Info
	Quick View Mit300ta12hr1 1200V/300A 2 in One-Package IGBT Modules Contact Now	Quick View Professional Supplier Silicon Wafer CZ Fz for Semiconductor Devices Contact Now	Quick View Single Side Polished P Type Single Crystal 2/4/6/8/12 Inch Silicon Wafer Contact Now	Quick View Semiconductor Application Monocrystalline 4inch Fz Silicon Contact Now	Quick View Silicon Wafer (single side polished) P-Type, 3 Inch Diameter and 0.5 mm Thickness Contact Now
Price	US $ 50.00-70.00/ Piece	US $ 1.00-100.00/ Piece	US $ 1.00-100.00/ Piece	US $ 1.00-100.00/ Piece	US $ 1.00-100.00/ Piece
Min Order	10 Pieces	25 Pieces	25 Pieces	25 Pieces	25 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T, D/P, Western Union, Paypal, Money Gram, Xtransfer	T/T, Western Union, Paypal	T/T, Western Union, Paypal	T/T, Western Union, Paypal	T/T, Western Union, Paypal
Quality Control
Management System Certification	ISO 9001, ISO 14001	ISO 9001	ISO 9001	ISO 9001	ISO 9001
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	OEM, ODM	Own Brand	Own Brand	Own Brand	Own Brand
Average Lead Time	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)
Product Attributes
Specification	Manufacturing Technology: Optoelectronic Semiconductor; Material: Element Semiconductor; Type: N-type Semiconductor; Package: PGA(Pin Grid Array Package); Signal Processing: Analog Digital Composite and Function; Application: Welding, Inductive Heating, UPS; Model: Mit300ta12hr1; Batch Number: 2022+; Maximum IGBT Junction Temperature: 150ºC; Continuous Gate to Emitter Voltage: ±30V; Collector to Emitter Voltage: 1200V; Pulse Collector Current: 600A; Maximum Power Dissipation(IGBT): 1140W;	Manufacturing Technology: Optoelectronic Semiconductor; Material: Compound Semiconductor; Type: Intrinsic Semiconductor; Package: SMD; Signal Processing: Analog Digital Composite and Function; Application: LED; Growth Method: CZ and Fz; Orientation: 111 or 100; Resistivity: 0.0005 to 150; Surface: Double Side Polished or Single Side Polished; Dopant: N Type and P Type; Particles: <30 at 0.3um; Bow: < 30 Um; Ttv: <15 Um;	Manufacturing Technology: Optoelectronic Semiconductor; Material: Compound Semiconductor; Type: Intrinsic Semiconductor; Package: SMD; Signal Processing: Analog Digital Composite and Function; Application: LED; Growth Method: CZ and Fz; Orientation: 111 or 100; Resistivity: 0.0005 to 150; Surface: Double Side Polished or Single Side Polished; Dopant: N Type and P Type; Particles: <30 at 0.3um; Bow: < 30 Um; Ttv: <15 Um;	Manufacturing Technology: Optoelectronic Semiconductor; Material: Compound Semiconductor; Type: Intrinsic Semiconductor; Package: SMD; Signal Processing: Analog Digital Composite and Function; Application: LED; Growth Method: CZ and Fz; Orientation: 111 or 100; Resistivity: 0.0005 to 150; Surface: Double Side Polished or Single Side Polished; Dopant: N Type and P Type; Particles: <30 at 0.3um; Bow: < 30 Um; Ttv: <15 Um;	Manufacturing Technology: Optoelectronic Semiconductor; Material: Compound Semiconductor; Type: Intrinsic Semiconductor; Package: SMD; Signal Processing: Analog Digital Composite and Function; Application: LED; Growth Method: CZ and Fz; Orientation: 111 or 100; Resistivity: 0.0005 to 150; Surface: Double Side Polished or Single Side Polished; Dopant: N Type and P Type; Particles: <30 at 0.3um; Bow: < 30 Um; Ttv: <15 Um;
Supplier Name	Shenzhen Botong Electric Co., Ltd.	Jiaozuo Commercial Finewin Co., Ltd.	Jiaozuo Commercial Finewin Co., Ltd.	Jiaozuo Commercial Finewin Co., Ltd.	Jiaozuo Commercial Finewin Co., Ltd.
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