Diode

US$0.0032-0.0035 / Piece

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Semiconductor Do-214AC 1A 100V SMD Es1b Super Fast Recovery Rectifier Semiconductor Diode pictures & photos

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What is Semiconductor Do-214AC 1A 100V SMD Es1b Super Fast Recovery Rectifier Semiconductor Diode

Name: Semiconductor Do-214AC 1A 100V SMD Es1b Super Fast Recovery Rectifier Semiconductor Diode
Uploaded: 2023-07-20T12:25:31+08:00
Description: Product Description Super Fast Recovery Rectifier Diode Part Number: ES1A~ES1K Major Parameter: Type VRRM IF IR(25ºC) IR(125ºC) VF Outline V A μA uA V ES1A 50 1.0 5 100 1.0 DO-214AC SMA

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About this Item

Price

Purchase Qty. Reference FOB Price

50,000-499,999 Pieces US$0.0035

500,000+ Pieces US$0.0032

Sepcifications

Manufacturing Technology Integrated Circuits Device
Material Element Semiconductor
Type Intrinsic Semiconductor
Signal Processing Digital
Application Radio
Model Es1b
Batch Number 2021+
Brand Mic
Transport Package Paper Carton
Specification DO-214AC/SMA
Origin China

Product Description

Product Description Super Fast Recovery Rectifier Diode Part Number: ES1A~ES1K Major Parameter: Type VRRM IF IR(25ºC) IR(125ºC) VF Outline V A μA uA V ES1A 50 1.0 5 100 1.0 DO-214AC SMA ES1B 100 1.0 5 100 1.0 ES1D 200 1.0 5 100 1.0 ES1G 400 1.0 5 ...

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Chaozhou Haixinwei Electronics Factory

Diamond Member Since 2022

Audited Supplier

Business Type Manufacturer/Factory
Main Products Diode, Bridge Rectifier, Rectifier Diode, Fast Recovery Diode, Super Fast Diode, Chip
Number of Employees 10
Year of Establishment 2020-03-26
Management System Certification ISO 9001
Average Lead Time Peak Season Lead Time: one month
Off Season Lead Time: one month

Diode Comparison

	Quick View Semiconductor Do-214AC 1A 100V SMD Es1b Super Fast Recovery Rectifier Semiconductor Diode Contact Now	Quick View 1200V 36A N-Channel Sic Power Mosfet Dhc1m080120d to-3p Contact Now	Quick View 50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT G50t65lbbw Contact Now	Quick View 50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dhg50t65D Contact Now	Quick View 80A 200V Fast Recovery Diode Mur80fu20nct to-3pn Contact Now

Transaction Info
	Quick View Semiconductor Do-214AC 1A 100V SMD Es1b Super Fast Recovery Rectifier Semiconductor Diode Contact Now	Quick View 1200V 36A N-Channel Sic Power Mosfet Dhc1m080120d to-3p Contact Now	Quick View 50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT G50t65lbbw Contact Now	Quick View 50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dhg50t65D Contact Now	Quick View 80A 200V Fast Recovery Diode Mur80fu20nct to-3pn Contact Now
Price	US $ 0.0032-0.0035/ Piece	US $ 0.01-1.50/ Piece	US $ 0.01-1.50/ Piece	US $ 0.50-1.50/ Piece	US $ 0.01-0.20/ Piece
Min Order	50000 Pieces	5000 Pieces	5000 Pieces	5000 Pieces	5000 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T, D/P, Western Union, Paypal, Money Gram	L/C, T/T	L/C, T/T	L/C, T/T	L/C, T/T
Quality Control
Management System Certification	ISO 9001	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949
Trade Capacity
Export Markets	Domestic	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)
Annual Export Revenue	-	-	-	-	-
Business Model	OEM, ODM, Own Brand	Own Brand	Own Brand	Own Brand	Own Brand
Average Lead Time	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)
Product Attributes
Specification	Manufacturing Technology: Integrated Circuits Device; Material: Element Semiconductor; Type: Intrinsic Semiconductor; Signal Processing: Digital; Application: Radio; Model: Es1b; Batch Number: 2021+; Brand: Mic;	Manufacturing Technology: Discrete Device; Material: Sic; Type: N-type Semiconductor; Package: to-3p; Application: Solar Inverters; Model: Dhc1m080120d; Batch Number: 2022; Brand: Wxdh; Voltage: 1200V; Cirrent: 36A;	Manufacturing Technology: Discrete Device; Material: Silicon; Type: N-type Semiconductor; Package: to-247; Application: Welding, UPS; Model: G50t65lbbw; Batch Number: 2022; Brand: Wxdh; Voltage: 650V; Current: 50A;	Manufacturing Technology: Discrete Device; Material: Silicon; Type: N-type Semiconductor; Package: to-3pn; Application: Welding, UPS; Model: Dhg50t65D; Batch Number: 2022; Brand: Wxdh; Voltage: 650V; Currency: 50A;	Manufacturing Technology: Discrete Device; Material: Silicon; Type: N-type Semiconductor; Package: to-3pn; Application: Switching Power Supply; Model: Mur80fu20nct; Batch Number: 2022; Brand: Wxdh; Voltage: 200V; Current: 80A;
Supplier Name	Chaozhou Haixinwei Electronics Factory	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd
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