Zener Diode BZD59C8V2 SOD-123FL 8.2V pictures & photos

Zener Diode BZD59C8V2 SOD-123FL 8.2V

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Price

Min. Order Reference FOB Price

10000 Pieces Negotiable

Sepcifications

Manufacturing Technology Discrete Device
Material Element Semiconductor
Type P-N Type
Package SOD-123FL
Signal Processing Analog Digital Composite and Function
Application Electronic Product
Model BZD59C8V2
Batch Number 2022+
Brand Made in China
Transport Package Box
Specification 8.2V
Origin China

Product Description

Product Description FEATURE Silicon power zener diodes. Low zener impedance. 1500mW rating on FR-4 or FR-5 board. Voltage range includes breakdown voltages from 6.8V to 100V with ±5% for BZD59C series. Low profile surface-mount package. Zener and surge current specification. ...

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Kunshan Huateng Electronics Co., Ltd.

Gold Member Since 2022

Audited Supplier

Business Type Manufacturer/Factory
Main Products Capacitors, Diode, MOS, Resistor, Tvs, Charge IC
Registered Capital 8000000 RMB
Plant Area 1001~2000 square meters
Management System Certification ISO 9001
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays

laser diode Comparison

	Zener Diode BZD59C8V2 SOD-123FL 8.2V Contact Now	Quick View Hot Selling Polishing Surface 4 Inch Lab Research Si Substrate Substrate for Semiconductor Silicon Wafer Contact Now	Quick View Single Side Polished P Type Single Crystal 12 Inch Silicon Wafer Contact Now	Quick View Japanese Quality Factory Direct Sales 4-12 Inch Dummy Silicon Wafer Contact Now	Quick View 12 Inch P Type Silicon Wafer Polishing Crystal Silicon Wafer Contact Now

Transaction Info
	Zener Diode BZD59C8V2 SOD-123FL 8.2V Contact Now	Quick View Hot Selling Polishing Surface 4 Inch Lab Research Si Substrate Substrate for Semiconductor Silicon Wafer Contact Now	Quick View Single Side Polished P Type Single Crystal 12 Inch Silicon Wafer Contact Now	Quick View Japanese Quality Factory Direct Sales 4-12 Inch Dummy Silicon Wafer Contact Now	Quick View 12 Inch P Type Silicon Wafer Polishing Crystal Silicon Wafer Contact Now
Price	Negotiable	US $ 10/ pc	US $ 25/ pc	US $ 20/ pc	US $ 25/ pc
Min Order	10000 Pieces	50 pc	50 pc	50 pc	50 pc
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T, D/P, Western Union, Paypal, Money Gram	T/T, Paypal	T/T, Paypal	T/T, Paypal	T/T, Paypal
Quality Control
Management System Certification	ISO 9001	ISO 29001	ISO 29001	ISO 29001	ISO 29001
Trade Capacity
Export Markets	North America, Eastern Europe, Africa, Mid East, Western Europe	Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Southeast Asia/ Mideast, East Asia(Japan/ South Korea)
Annual Export Revenue	-	-	-	-	-
Business Model	OEM	-	-	-	-
Average Lead Time	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	-	-	-	-
Product Attributes
Specification	Manufacturing Technology: Discrete Device; Material: Element Semiconductor; Type: P-N Type; Package: SOD-123FL; Signal Processing: Analog Digital Composite and Function; Application: Electronic Product; Model: BZD59C8V2; Batch Number: 2022+; Brand: Made in China;	Manufacturing Technology: Integrated Circuits Device; Material: Compound Semiconductor; Type: P-type Semiconductor; Package: Semi Standard; Signal Processing: Na; Application: Equipment; Model: Custimize; Batch Number: Na; Brand: Fsm; Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Frront Side: Polished; Edge: Polished;	Manufacturing Technology: Integrated Circuits Device; Material: Compound Semiconductor; Type: P-type Semiconductor; Package: Semi Standard; Signal Processing: Na; Application: Equipment; Model: Custimize; Batch Number: Na; Brand: Fsm; Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Frront Side: Polished; Edge: Polished;	Manufacturing Technology: Integrated Circuits Device; Material: Compound Semiconductor; Type: P-type Semiconductor; Package: Semi Standard; Signal Processing: Na; Application: Equipment; Model: Custimize; Batch Number: Na; Brand: Fsm; Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Frront Side: Polished; Edge: Polished;	Manufacturing Technology: Integrated Circuits Device; Material: Compound Semiconductor; Type: P-type Semiconductor; Package: Semi Standard; Signal Processing: Na; Application: Equipment; Model: Custimize; Batch Number: Na; Brand: Fsm; Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Frront Side: Polished; Edge: Polished;
Supplier Name	Kunshan Huateng Electronics Co., Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.
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