Amplifier Tube 3cx6000A7 Used in Radio Equipments

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Price

Min. Order Reference FOB Price

1 Piece US$700.00-1,700.00 / Piece

Sepcifications

Shape Metal Porcelain Tube
Shielding Type Sharp Cutoff Shielding Tube
Cooling Method Air Cooled Tube
Function High Frequency Generator for Oscillator
Working Frequency High Frequency
Structure Metal- Ceramic
Encapsulation Structure Metal- Ceramic
Power Level High Power
Material Metal- Ceramic
Transport Package Suitable for Long-Distance Transportation
Specification Output power 10kW
Trademark Beijing Jenerator
Origin China

Product Description

Triode 3CX6000A7 is a air cooled, ceramic-metal high amplification factor power triode containing a thoriated tungsten cathode which is designed for mainly used as an oscillator in industrial heating machines. It is also used as an amplifier or modulator in radio equipments. The working frequency is ...

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Beijing Jenerator Electronic Co.,Ltd

Gold Member Since 2006

Audited Supplier

Business Type Trading Company
Main Products Electronic Tubes, Magnetrons, Ceramic Capacitors, Resistors, Oscillator Tube
Number of Employees 10
Year of Establishment 2008-01-18
Management System Certification Others
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays

Yu148 Comparison

	Amplifier Tube 3cx6000A7 Used in Radio Equipments Contact Now	High Power and Current Handling Mosfet Transistor 3400L Sot-23-3 N-Channel Power Mosfet Contact Now	P-Channel Transistors Distribution Power 2.5W Trans Mosfet P-CH 40V 7A G07p04s Contact Now	Power Silicon Field Transistors N-Channel with Insulated Gate G10n10A Sop-8 100V 15A Contact Now	(TRANSISTOR) Switching Mosfet P-CH 30V 2A 3-Pin 2301h Sot-23 T/R Contact Now

Transaction Info
	Amplifier Tube 3cx6000A7 Used in Radio Equipments Contact Now	High Power and Current Handling Mosfet Transistor 3400L Sot-23-3 N-Channel Power Mosfet Contact Now	P-Channel Transistors Distribution Power 2.5W Trans Mosfet P-CH 40V 7A G07p04s Contact Now	Power Silicon Field Transistors N-Channel with Insulated Gate G10n10A Sop-8 100V 15A Contact Now	(TRANSISTOR) Switching Mosfet P-CH 30V 2A 3-Pin 2301h Sot-23 T/R Contact Now
Price	US $ 700.00-1,700.00/ Piece	US $ 0.023-0.026/ Piece	US $ 0.115-0.135/ Piece	US $ 0.062-0.099/ Piece	US $ 0.015-0.02/ Piece
Min Order	1 Pieces	20 Pieces	20 Pieces	20 Pieces	20 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T, Western Union, Money Gram	T/T, Paypal	T/T, Paypal	T/T, D/P, Western Union, Paypal, Money Gram	T/T, Paypal
Quality Control
Product Certification	-	RoHS, ISO	RoHS, ISO	RoHS, ISO	RoHS, ISO
Management System Certification	-	ISO 9001	ISO 9001	ISO 9001	ISO 9001
Trade Capacity
Export Markets	North America, South America, Europe, Southeast Asia/ Mideast, Africa, East Asia(Japan/ South Korea), Australia, Domestic	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	-	Own Brand	Own Brand	Own Brand	Own Brand
Average Lead Time	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: 1 Month(s)	Off-season: 1 Month(s)	Off-season: 1 Month(s)	Off-season: 1 Month(s)
Product Attributes
Specification	Shape: Metal Porcelain Tube; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Function: High Frequency Generator for Oscillator; Working Frequency: High Frequency; Structure: Metal- Ceramic; Encapsulation Structure: Metal- Ceramic; Power Level: High Power; Material: Metal- Ceramic;	Shape: SMD; Function: Switch Transistor; Structure: Trench; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Small Power; Material: Silicon; Vdss: 30V; ID: 5.6A; RDS: 21 Mr; Pd: 1.4W; Package: Sot-23-3; Stock: in Stock; Sample: Available; Lead Free Status: Pb-Free; Spq: 3000PCS/Reel;	Shape: SMD; Function: Switch Transistor; Structure: Trench; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Small Power; Material: Silicon; Vdss: -40V; ID: -7A; RDS: 18mohm @ Vgs=10V; Pd: 2.5W; Package: Sop-8; Stock: in Stock; Sample: Available; Lead Free Status: Pb-Free; Spq: 4000PCS/Reel; CISS: 1750; Crss: 1180; Vth: -1.5V;	Shape: SMD; Function: Switch Transistor; Structure: Trench; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Medium Power; Material: Silicon; Vdss: 100V; ID: 15A; RDS: 6.6mohm (Vgs=10V); Pd: 3.1W; Package: Sop-8; Stock: in Stock; Sample: Available; Lead Free Status: Pb-Free; Spq: 4000PCS/Reel; Vth: 1.9V; CISS: 2808; Crss: 23;	Shape: SMD; Function: Switch Transistor; Structure: Trench; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Small Power; Material: Silicon; Vdss: -30V; ID: -2A; RDS: 105mΩ(Vgs=4.5V); Pd: 0.9W; Package: Sot-23; Stock: in Stock; Sample: Available; Lead Free Status: Pb-Free; Spq: 3000PCS/Reel; Vth: -1.6V; CISS: 405; Crss: 55;
Supplier Name	Beijing Jenerator Electronic Co.,Ltd	Wuxi Goford Semiconductor Co., Ltd.	Wuxi Goford Semiconductor Co., Ltd.	Wuxi Goford Semiconductor Co., Ltd.	Wuxi Goford Semiconductor Co., Ltd.
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