RoHS Compliant P-Channel Mosfet Application 2301 in a Sot-23 Package

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Price

Min. Order Reference FOB Price

20 Pieces US$0.013-0.015 / Piece

Sepcifications

Certification RoHS, ISO
Shape SMD
Function Switch Transistor
Structure Trench
Encapsulation Structure Plastic Sealed Transistor
Power Level Small Power
Material Silicon
Transport Package Carton
Trademark GOFORD
Origin China
Vdss -20V
ID -3A
RDS 48mr
Pd 1W
Package Sot-23
Stock in Stock
Sample Available
Lead Free Status Pb-Free
Spq 3000PCS/Reel

Product Description

Product Description Rohs Compliant P-Channel MOSFET application 2301 in a SOT-23 package Part Number 2301 VDSS -20V ID -3A RDS 48mΩ @ vgs=4.5V Vth -0.7V Package SOT-23 Ciss 405 pF Crss 55 pF Datasheet You may like For more products details, please contact us ! ...

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Wuxi Goford Semiconductor Co., Ltd.

Gold Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory, Trading Company
Business Range Consumer Electronics, Electrical & Electronics
Main Products Mosfet, Transistor, Semiconductor, Power Transistor, Power Mosfet, Super Junction Mosfet, Mosfet Transistor, Super Junction, Electronic Component
Management System Certification ISO 9001
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
International Commercial Terms(Incoterms) FOB, CFR, CIF, EXW

Mosfet Transistor Comparison

	RoHS Compliant P-Channel Mosfet Application 2301 in a Sot-23 Package Contact Now	Quick View To247 Ost80n65hsmf Vces-650V Maximum Junction Temperature175 N-Channel Power IGBT Contact Now	Quick View Transistor Enhancement Mode To247 Ost60n65hmf Vces-650V Maximum Junction Temperature175, IC, N-Channel Power IGBT Contact Now	Quick View Enhancement Mode N-Channel Power IGBT Transistor Contact Now	Quick View Sic Diode To247 Ost50n65hewf Vces-650V Maximum Junction Temperature175 N-Channel Power IGBT Contact Now

Transaction Info
	RoHS Compliant P-Channel Mosfet Application 2301 in a Sot-23 Package Contact Now	Quick View To247 Ost80n65hsmf Vces-650V Maximum Junction Temperature175 N-Channel Power IGBT Contact Now	Quick View Transistor Enhancement Mode To247 Ost60n65hmf Vces-650V Maximum Junction Temperature175, IC, N-Channel Power IGBT Contact Now	Quick View Enhancement Mode N-Channel Power IGBT Transistor Contact Now	Quick View Sic Diode To247 Ost50n65hewf Vces-650V Maximum Junction Temperature175 N-Channel Power IGBT Contact Now
Price	US $ 0.013-0.015/ Piece	US $ 0.20-1.20/ Piece	US $ 0.10-1.10/ Piece	US $ 0.30-1.30/ Piece	US $ 0.30-1.30/ Piece
Min Order	20 Pieces	600 Pieces	600 Pieces	330 Pieces	600 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Paypal	T/T	L/C, T/T	T/T	T/T
Quality Control
Product Certification	RoHS, ISO	RoHS, ISO	RoHS, ISO	RoHS, ISO	RoHS, ISO
Management System Certification	ISO 9001	ISO 9001, ISO 14001	ISO 9001, ISO 14001	ISO 9001, ISO 14001	ISO 9001, ISO 14001
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	Own Brand	Own Brand	Own Brand	Own Brand
Average Lead Time	Off-season: 1 Month(s)	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)
Product Attributes
Specification	Shape: SMD; Function: Switch Transistor; Structure: Trench; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Small Power; Material: Silicon; Vdss: -20V; ID: -3A; RDS: 48mr; Pd: 1W; Package: Sot-23; Stock: in Stock; Sample: Available; Lead Free Status: Pb-Free; Spq: 3000PCS/Reel;	Shape: Metal Porcelain Tube; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Function: Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon;	Shape: Metal Porcelain Tube; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Function: Switch Transistor; Working Frequency: High Frequency; Structure: Diffusion; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon;	Shape: ST; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: Naturally Cooled Tube; Function: Switch Transistor; Working Frequency: High Frequency; Structure: Diffusion; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Medium Power; Material: Silicon; Application1: Induction Heating; Application2: Soft Switching Applications;	Shape: Metal Porcelain Tube; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Function: Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon;
Supplier Name	Wuxi Goford Semiconductor Co., Ltd.	Shanghai Winture Electric Co., Ltd.	Shanghai Winture Electric Co., Ltd.	Shanghai Winture Electric Co., Ltd.	Shanghai Winture Electric Co., Ltd.
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