Irf4905pbf Alternative Part G65p06t -60V -65A Mosfet Transistor pictures & photos

Irf4905pbf Alternative Part G65p06t -60V -65A Mosfet Transistor

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About this Item

Price

Min. Order Reference FOB Price

100 Pieces Negotiable

Sepcifications

Certification RoHS, ISO
Shape Through Hole
Function Switch Transistor
Structure Trench
Encapsulation Structure Plastic Sealed Transistor
Power Level High Power
Material Silicon
Transport Package Carton
Trademark GOFORD
Origin China
Vdss -60V
ID -65A
RDS 13mr
Pd 130W
Package to-220
Stock in Stock
Sample Available
Lead Free Status Pb-Free
Spq 50PCS/Tube

Product Description

Product Description IRF4905PBF alternative part G65P06T -60V -65A Mosfet transistor Part Number G65P06T VDSS -60V ID -65A RDS 13mΩ @ vgs=10V Vth -1.8V Package TO-220 Ciss 5814 pF Crss 234 pF Datasheet You may like For more products details, please contact us ! ...

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Wuxi Goford Semiconductor Co., Ltd.

Gold Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory, Trading Company
Business Range Consumer Electronics, Electrical & Electronics
Main Products Mosfet, Transistor, Semiconductor, Power Transistor, Power Mosfet, Super Junction Mosfet, Mosfet Transistor, Super Junction, Electronic Component
Management System Certification ISO 9001
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
International Commercial Terms(Incoterms) FOB, CFR, CIF, EXW

Irf4905pbf Transistor Comparison

	Irf4905pbf Alternative Part G65p06t -60V -65A Mosfet Transistor Contact Now	Quick View Low Collector - Emitter Saturation Voltage Ost40n120hmf 10µ S Short-Circuit Tolerance 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT Contact Now	Quick View Highly Reliable General Inverter of Automotive and Industrial IGBT Contact Now	Quick View Igbts Insulated Gate Bipolar Transistors Contact Now	Quick View Trident-Gate Bipolar Transistor Automotive Ost40n120hmf 10µ S Short-Circuit Tolerance 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT Contact Now

Transaction Info
	Irf4905pbf Alternative Part G65p06t -60V -65A Mosfet Transistor Contact Now	Quick View Low Collector - Emitter Saturation Voltage Ost40n120hmf 10µ S Short-Circuit Tolerance 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT Contact Now	Quick View Highly Reliable General Inverter of Automotive and Industrial IGBT Contact Now	Quick View Igbts Insulated Gate Bipolar Transistors Contact Now	Quick View Trident-Gate Bipolar Transistor Automotive Ost40n120hmf 10µ S Short-Circuit Tolerance 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT Contact Now
Price	Negotiable	US $ 0.10-0.60/ Piece	US $ 0.10-0.60/ Piece	US $ 0.10-0.60/ Piece	US $ 0.10-0.60/ Piece
Min Order	100 Pieces	1000 Pieces	1000 Pieces	1000 Pieces	1000 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Paypal	L/C, T/T	L/C, T/T	L/C, T/T	L/C, T/T
Quality Control
Product Certification	RoHS, ISO	RoHS, ISO	RoHS, ISO	RoHS, ISO	RoHS, ISO
Management System Certification	ISO 9001	ISO 9001, ISO 14001	ISO 9001, ISO 14001	ISO 9001, ISO 14001	ISO 9001, ISO 14001
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	Own Brand	Own Brand	Own Brand	Own Brand
Average Lead Time	Off-season: 1 Month(s)	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)
Product Attributes
Specification	Shape: Through Hole; Function: Switch Transistor; Structure: Trench; Encapsulation Structure: Plastic Sealed Transistor; Power Level: High Power; Material: Silicon; Vdss: -60V; ID: -65A; RDS: 13mr; Pd: 130W; Package: to-220; Stock: in Stock; Sample: Available; Lead Free Status: Pb-Free; Spq: 50PCS/Tube;	Shape: ST; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Function: Microwave Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon;	Shape: ST; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Function: Microwave Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon;	Shape: ST; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Function: Microwave Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon;	Shape: ST; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Function: Microwave Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon;
Supplier Name	Wuxi Goford Semiconductor Co., Ltd.	Shanghai Winture Electric Co., Ltd.	Shanghai Winture Electric Co., Ltd.	Shanghai Winture Electric Co., Ltd.	Shanghai Winture Electric Co., Ltd.
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