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G30n03D3 Package Dfn3*3-8L Semiconductor Switch Transistor Power Mosfet for Pd/Wireless Charger with RoHS ISO pictures & photos

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What is G30n03D3 Package Dfn3*3-8L Semiconductor Switch Transistor Power Mosfet for Pd/Wireless Charger with RoHS ISO

Name: G30n03D3 Package Dfn3*3-8L Semiconductor Switch Transistor Power Mosfet for Pd/Wireless Charger with RoHS ISO
Uploaded: 2021-11-17T16:57:22+08:00
Description: G30N03D3 DFN package 3*3-8L Switch Transistor Power Mosfet for Fast Charger https://gofordsemi.en.made-in-china.com/product/MdXnRgxwXIhp/China-G30n03D3-30V-30A-Dfn3-3-N-Channel-Power-Transistor-Mo

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Price

Min. Order Reference FOB Price

20 Pieces US$0.06-0.075 / Piece

Sepcifications

Transport Package Carton
Specification DFN3*3-8L
Trademark GOFORD
Origin China
Vds(Min) 30V
Vgs(Th)Type(V) 1.5V
RDS(on)(Typ)(@4.5V) 8mr
Manufacturing Technology Discrete Device
Material Compound Semiconductor
Type N-type Semiconductor
Package Dfn3*3-8L
Signal Processing Voltage Controlled Device
Application Switch Transistor
Model G48n03D3
Batch Number Dfn3*3-8L
Brand Goford

Product Description

G30N03D3 DFN package 3*3-8L Switch Transistor Power Mosfet for Fast Charger https://gofordsemi.en.made-in-china.com/product/MdXnRgxwXIhp/China-G30n03D3-30V-30A-Dfn3-3-N-Channel-Power-Transistor-Mosfet-for-Pd-Charger.html PACKAGING &SHIPPING: 1. The order normally will be shipped ...

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Wuxi Goford Semiconductor Co., Ltd.

Gold Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory, Trading Company
Business Range Consumer Electronics, Electrical & Electronics
Main Products Mosfet, Transistor, Semiconductor, Power Transistor, Power Mosfet, Super Junction Mosfet, Mosfet Transistor, Super Junction, Electronic Component
Management System Certification ISO 9001
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
International Commercial Terms(Incoterms) FOB, CFR, CIF, EXW

Semiconductor Comparison

	Quick View G30n03D3 Package Dfn3*3-8L Semiconductor Switch Transistor Power Mosfet for Pd/Wireless Charger with RoHS ISO Contact Now	Quick View 30A 1200V Fast Recovery Diode Mur30120 to-220-2L Contact Now	Quick View 50A 200V Fast Recovery Diode Mur5020DCT to-3p Contact Now	Quick View 60A 400V Fast Recovery Diode Mur6060DCT to-3p Contact Now	Quick View 4A 600V N-Channel Enhancement Mode Power Mosfet D4n60 to-252 Contact Now

Transaction Info
	Quick View G30n03D3 Package Dfn3*3-8L Semiconductor Switch Transistor Power Mosfet for Pd/Wireless Charger with RoHS ISO Contact Now	Quick View 30A 1200V Fast Recovery Diode Mur30120 to-220-2L Contact Now	Quick View 50A 200V Fast Recovery Diode Mur5020DCT to-3p Contact Now	Quick View 60A 400V Fast Recovery Diode Mur6060DCT to-3p Contact Now	Quick View 4A 600V N-Channel Enhancement Mode Power Mosfet D4n60 to-252 Contact Now
Price	US $ 0.06-0.075/ Piece	US $ 0.01-1.50/ Piece	US $ 0.01-1.50/ Piece	US $ 0.01-1.50/ Piece	US $ 0.01-1.50/ Piece
Min Order	20 Pieces	5000 Pieces	5000 Pieces	5000 Pieces	5000 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Paypal	L/C, T/T	L/C, T/T	L/C, T/T	L/C, T/T
Quality Control
Management System Certification	ISO 9001	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	Own Brand	Own Brand	Own Brand	Own Brand
Average Lead Time	Off-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)
Product Attributes
Specification	Vds(Min): 30V; Vgs(Th)Type(V): 1.5V; RDS(on)(Typ)(@4.5V): 8mr; Manufacturing Technology: Discrete Device; Material: Compound Semiconductor; Type: N-type Semiconductor; Package: Dfn33-8L;* Signal Processing: Voltage Controlled Device; Application: Switch Transistor; Model: G48n03D3; Batch Number: Dfn33-8L;* Brand: Goford;	Voltage: 1200V; Current: 30A; Manufacturing Technology: Discrete Device; Type: N-type Semiconductor; Material: Silicon; Package: to-220-2L; Application: Switching Power Supply; Model: Mur30120; Batch Number: 2021; Brand: Wxdh;	Voltage: 200V; Current: 50A; Manufacturing Technology: Discrete Device; Type: N-type Semiconductor; Material: Silicon; Package: to-3p; Application: Switching Power Supply; Model: Mur5020DCT; Batch Number: 2021; Brand: Wxdh;	Voltage: 400V; Current: 60A; Manufacturing Technology: Discrete Device; Type: N-type Semiconductor; Material: Silicon; Package: to-3p; Application: Switching Power Supply; Model: Mur6060DCT; Batch Number: 2021; Brand: Wxdh;	Voltage: 600V; Current: 4A; Manufacturing Technology: Discrete Device; Type: N-type Semiconductor; Material: Metal-Oxide Semiconductor; Package: to-252b; Application: Power Switch Circuit; Model: D4n60; Batch Number: 2021; Brand: Wxdh;
Supplier Name	Wuxi Goford Semiconductor Co., Ltd.	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd
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