Overload Protection Applied Single P-CH Mosfet Low Voltage with Competitive Price pictures & photos

Overload Protection Applied Single P-CH Mosfet Low Voltage with Competitive Price

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Price

Min. Order Reference FOB Price

20 Pieces US$0.115-0.135 / Piece

Sepcifications

Certification RoHS, ISO
Shape SMD
Function Switch Transistor
Working Frequency Low Frequency
Structure Trench
Encapsulation Structure Plastic Sealed Transistor
Power Level Medium Power
Material Silicon
Transport Package Reel, with Antistatic Alluminum Foil Bag
Trademark GOFORD
Origin China
Vdss -40V
ID -50A
RDS 9 Mr
Pd 65W
Package to-252
Stock in Stock
Sample Available
Lead Free Status Pb-Free
Spq 2500PCS/Reel

Product Description

Product Description Overload protection applied Single P-CH mosfet low voltage with competitive price Part Number 45P40 VDSS -40V ID -50A RDS 9mΩ @ vgs=10V Vth -1.9V Package TO-252 Ciss 5020 pF Crss 374 pF Datasheet You may like For more products details, please ...

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Wuxi Goford Semiconductor Co., Ltd.

Gold Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory, Trading Company
Business Range Consumer Electronics, Electrical & Electronics
Main Products Mosfet, Transistor, Semiconductor, Power Transistor, Power Mosfet, Super Junction Mosfet, Mosfet Transistor, Super Junction, Electronic Component
Management System Certification ISO 9001
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
International Commercial Terms(Incoterms) FOB, CFR, CIF, EXW

Electronic Component Comparison

	Overload Protection Applied Single P-CH Mosfet Low Voltage with Competitive Price Contact Now	Original Transistors G4PC50W IGBT 37A600V Irg4PC50W to-247 Contact Now	2SA1494 Electronic Components Audio Power Transistor Mt-200 2SA1494 2sc3858 Transistor Contact Now	2sk2645 K2645 600V 9A Power Field-Effect Transistor Mosfet Contact Now	Quick View New Original Irfb4115pbf Mosfet To220 Transistor Irfb4115 Contact Now

Transaction Info
	Overload Protection Applied Single P-CH Mosfet Low Voltage with Competitive Price Contact Now	Original Transistors G4PC50W IGBT 37A600V Irg4PC50W to-247 Contact Now	2SA1494 Electronic Components Audio Power Transistor Mt-200 2SA1494 2sc3858 Transistor Contact Now	2sk2645 K2645 600V 9A Power Field-Effect Transistor Mosfet Contact Now	Quick View New Original Irfb4115pbf Mosfet To220 Transistor Irfb4115 Contact Now
Price	US $ 0.115-0.135/ Piece	US $ 0.50-1.00/ Piece	US $ 1.30-1.70/ Piece	US $ 1.37/ Piece	US $ 0.55-1.25/ Piece
Min Order	20 Pieces	10 Pieces	10 Pieces	10 Pieces	10 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Paypal	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal
Quality Control
Product Certification	RoHS, ISO	-	RoHS	-	RoHS
Management System Certification	ISO 9001	-	-	-	-
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	South America, Europe, Southeast Asia/ Mideast, Others	South America, Europe, Southeast Asia/ Mideast, Others	South America, Europe, Southeast Asia/ Mideast, Others	South America, Europe, Southeast Asia/ Mideast, Others
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	-	-	-	-
Average Lead Time	Off-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)
Product Attributes
Specification	Shape: SMD; Function: Switch Transistor; Working Frequency: Low Frequency; Structure: Trench; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Medium Power; Material: Silicon; Vdss: -40V; ID: -50A; RDS: 9 Mr; Pd: 65W; Package: to-252; Stock: in Stock; Sample: Available; Lead Free Status: Pb-Free; Spq: 2500PCS/Reel;	Function: IGBT Transistor; Termination Type: SMD / SMT; Product Category: IGBT Transistor; Collector- Emitter Voltage Vceo Max: 600 V; Product Type: IGBT Transistor; Product Number: Irg4PC50wpbf; Subcategory: IGBT;	Shape: DIP; Shielding Type: /; Cooling Method: /; Function: High Back Pressure Transistor; Working Frequency: High Frequency; Structure: /; Encapsulation Structure: DIP; Power Level: High Power; Material: Silicon; Product Number: 2sc3858; Description: Trans NPN 200V 17A Mt-200; Detailed Description: Bipolar (Bjt) Transistor NPN 200V 17A 20MHz 200W; Category: Transistor; Transistor Type: NPN; Mounting Type: Through Hole; Current - Collector (IC) (Max): 17A;	Function: Mosfet Transistor; Material: Silicon; Product Category: Mosfet; Mounting Style: SMD/SMT; Transistor Polarity: N-Channel; Subcategory: Mosfet;	Shape: DIP; Shielding Type: /; Cooling Method: /; Function: Mosfet Transistor; Working Frequency: High Frequency; Structure: /; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Plastic with Copper; Product Category: Mosfet; Transistor Polarity: N-Channel; Samacsys Description: /; Packaging: Tube; Transistor Type: 1 N-Channel; Subcategory: Fet General Purpose Power; Product Type: Mosfet;
Supplier Name	Wuxi Goford Semiconductor Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.
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