China Mosfet Manufacturer 40V 13A P Mosfet for Mobile Fast Charger pictures & photos

China Mosfet Manufacturer 40V 13A P Mosfet for Mobile Fast Charger

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Price

Min. Order Reference FOB Price

20 Pieces US$0.07-0.10 / Piece

Sepcifications

Certification RoHS, ISO, SGS
Function Switch Transistor
Structure Trench
Encapsulation Structure Plastic Sealed Transistor
Power Level Small Power
Material Plastic
Transport Package Carton
Specification sop-8 package
Trademark GOFORD
Origin China
Spq 4000 PCS/Reel
Lead Time 4~6 Weeks

Product Description

China MOSFET Manufacturer 40V 13A P MOSFET for Mobile Fast Charger General Description The G13P04S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. General Features High power and ...

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Wuxi Goford Semiconductor Co., Ltd.

Gold Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory, Trading Company
Business Range Consumer Electronics, Electrical & Electronics
Main Products Mosfet, Transistor, Semiconductor, Power Transistor, Power Mosfet, Super Junction Mosfet, Mosfet Transistor, Super Junction, Electronic Component
Management System Certification ISO 9001
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
International Commercial Terms(Incoterms) FOB, CFR, CIF, EXW

40V Mosfet Comparison

	China Mosfet Manufacturer 40V 13A P Mosfet for Mobile Fast Charger Contact Now	Quick View Original Transistor Bfp196wh6327 12V 700MW 100@50mA, 8V 150mA Sot-343-4 Bipolar Transistors - Bjt RoHS Bom Service Contact Now	Quick View Original Transistor Bfp640esdh6327 Sot-343-4 Bipolar Transistors - Bjt RoHS Bom Service Contact Now	Quick View Original Transistor Bfp650h6327 4V 500MW 170@70mA, 3V 150mA NPN Sot-343-4 Bipolar Transistors - Bjt RoHS Bom Service Contact Now	Quick View Original Transistor Bss214nwh6327 20V 1.5A 500MW 140mΩ @4.5V, 1.5A N Channel Sot-323 Mosfets RoHS Bom Service Contact Now

Transaction Info
	China Mosfet Manufacturer 40V 13A P Mosfet for Mobile Fast Charger Contact Now	Quick View Original Transistor Bfp196wh6327 12V 700MW 100@50mA, 8V 150mA Sot-343-4 Bipolar Transistors - Bjt RoHS Bom Service Contact Now	Quick View Original Transistor Bfp640esdh6327 Sot-343-4 Bipolar Transistors - Bjt RoHS Bom Service Contact Now	Quick View Original Transistor Bfp650h6327 4V 500MW 170@70mA, 3V 150mA NPN Sot-343-4 Bipolar Transistors - Bjt RoHS Bom Service Contact Now	Quick View Original Transistor Bss214nwh6327 20V 1.5A 500MW 140mΩ @4.5V, 1.5A N Channel Sot-323 Mosfets RoHS Bom Service Contact Now
Price	US $ 0.07-0.10/ Piece	US $ 0.1/ Piece	US $ 0.1/ Piece	US $ 0.1/ Piece	US $ 0.1/ Piece
Min Order	20 Pieces	10 Pieces	10 Pieces	10 Pieces	10 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Paypal	T/T, Paypal	T/T, Paypal	T/T, Paypal	T/T, Paypal
Quality Control
Product Certification	RoHS, ISO, SGS	RoHS, CE, ISO	RoHS, CE, ISO	RoHS, CE, ISO	RoHS, CE, ISO
Management System Certification	ISO 9001	ISO 9001	ISO 9001	ISO 9001	ISO 9001
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	-	-	-	-
Average Lead Time	Off-season: 1 Month(s)	-	-	-	-
Product Attributes
Specification	Function: Switch Transistor; Structure: Trench; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Small Power; Material: Plastic; Spq: 4000 PCS/Reel; Lead Time: 4~6 Weeks;	Shape: ST; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: -; Function: -; Working Frequency: -; Structure: -; Encapsulation Structure: Chip Transistor; Power Level: -; Material: Germanium;	Shape: ST; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: -; Function: -; Working Frequency: -; Structure: -; Encapsulation Structure: Chip Transistor; Power Level: -; Material: Germanium;	Shape: ST; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: -; Function: -; Working Frequency: -; Structure: -; Encapsulation Structure: Chip Transistor; Power Level: -; Material: Germanium;	Shape: ST; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: -; Function: -; Working Frequency: -; Structure: -; Encapsulation Structure: Chip Transistor; Power Level: -; Material: Germanium;
Supplier Name	Wuxi Goford Semiconductor Co., Ltd.	Shenzhen Hongjilong Technology Co., Ltd.	Shenzhen Hongjilong Technology Co., Ltd.	Shenzhen Hongjilong Technology Co., Ltd.	Shenzhen Hongjilong Technology Co., Ltd.
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