Power Mosfet Manufacturer G3710 Irf3710z Irf3710 Equivalent Transistor with to-220 Package pictures & photos

Power Mosfet Manufacturer G3710 Irf3710z Irf3710 Equivalent Transistor with to-220 Package

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Price

Min. Order Reference FOB Price

20 Pieces US$0.219-0.239 / Piece

Sepcifications

Certification RoHS, ISO, SGS
Function Switch Transistor
Working Frequency High Frequency
Structure Planar
Encapsulation Structure Plastic Sealed Transistor
Power Level Medium Power
Material Plastic
Transport Package Carton
Specification TO-220 package
Trademark GOFORD
Origin China
Spq 50PCS/Tube
Lead Time 4~6 Weeks

Product Description

Power MOSFET Manufacturer G3710 IRF3710Z IRF3710 Equivalent Transistor with TO-220 Package General Description The G3710 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. General ...

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Wuxi Goford Semiconductor Co., Ltd.

Gold Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory, Trading Company
Business Range Consumer Electronics, Electrical & Electronics
Main Products Mosfet, Transistor, Semiconductor, Power Transistor, Power Mosfet, Super Junction Mosfet, Mosfet Transistor, Super Junction, Electronic Component
Management System Certification ISO 9001
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
International Commercial Terms(Incoterms) FOB, CFR, CIF, EXW

Power Mosfet Comparison

	Power Mosfet Manufacturer G3710 Irf3710z Irf3710 Equivalent Transistor with to-220 Package Contact Now	Original Electronic Components Pic16f1519t-I/PT Pic16f1719t-I/PT Pic16f1784t-I/PT Integrated Circuit Bom List Service Contact Now	2n5401 Bipolar (BJT) Transistor PNP 150 V 600 Ma 300MHz 625 MW DIP to-92 2n5401 Contact Now	2n5551 Bipolar (BJT) Transistor NPN 160 V 600 Ma 300MHz 625 MW DIP to-92 (TO-226) 2n5551 Contact Now	Ipn60r3K4ceatma1 N-Channel Mosfet Transistor 600 V 2.6A (Tc) 5W (Tc) SMD Pg-Sot223-3 Ipn60r3 Series Contact Now

Transaction Info
	Power Mosfet Manufacturer G3710 Irf3710z Irf3710 Equivalent Transistor with to-220 Package Contact Now	Original Electronic Components Pic16f1519t-I/PT Pic16f1719t-I/PT Pic16f1784t-I/PT Integrated Circuit Bom List Service Contact Now	2n5401 Bipolar (BJT) Transistor PNP 150 V 600 Ma 300MHz 625 MW DIP to-92 2n5401 Contact Now	2n5551 Bipolar (BJT) Transistor NPN 160 V 600 Ma 300MHz 625 MW DIP to-92 (TO-226) 2n5551 Contact Now	Ipn60r3K4ceatma1 N-Channel Mosfet Transistor 600 V 2.6A (Tc) 5W (Tc) SMD Pg-Sot223-3 Ipn60r3 Series Contact Now
Price	US $ 0.219-0.239/ Piece	US $ 0.10-0.50/ Piece	US $ 0.01-1.00/ Piece	US $ 0.01-1.00/ Piece	US $ 0.01-1.00/ Piece
Min Order	20 Pieces	1 Pieces	1 Pieces	1 Pieces	1 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Paypal	T/T, Western Union, Paypal	T/T, Western Union, Paypal	T/T, Western Union, Paypal	T/T, Western Union, Paypal
Quality Control
Product Certification	RoHS, ISO, SGS	-	-	-	-
Management System Certification	ISO 9001	GMP	GMP	GMP	GMP
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	OEM	OEM	OEM	OEM
Average Lead Time	Off-season: 1 Month(s)	-	-	-	-
Product Attributes
Specification	Function: Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Medium Power; Material: Plastic; Spq: 50PCS/Tube; Lead Time: 4~6 Weeks;	Shape: DIP/SMD; Shielding Type: N/a; Cooling Method: N/a; Function: N/a; Working Frequency: N/a; Structure: N/a; Encapsulation Structure: DIP/SMD; Power Level: N/a; Material: N/a;	Shape: DIP; Function: Bipolar; Transistor Type: NPN; Current - Collector (IC) (Max): 600 Ma; Voltage - Collector Emitter Breakdown (M: 150 V; Vce Saturation (Max) @ Ib, IC: 500mv @ 5mA, 50mA; Current - Collector Cutoff (Max): 50na (Icbo); DC Current Gain (Hfe) (Min) @ IC, Vce: 60 @ 10mA, 5V; Power - Max: 625 MW; Frequency - Transition: 300MHz; Operating Temperature: -55°c ~ 150°c (Tj); Mounting Type: Through Hole; Supplier Device Package: to-226-3, to-92-3 Long Body; Base Product Number: 2n5401;	Shape: DIP; Function: Bipolar; Transistor Type: NPN; Current - Collector (IC) (Max): 600 Ma; Voltage - Collector Emitter Breakdown (M: 160 V; Vce Saturation (Max) @ Ib, IC: 200mv @ 5mA, 50mA; Current - Collector Cutoff (Max): 50na (Icbo); DC Current Gain (Hfe) (Min) @ IC, Vce: 80 @ 10mA, 5V; Power - Max: 625 MW; Frequency - Transition: 300MHz; Operating Temperature: -55°c ~ 150°c (Tj); Mounting Type: Through Hole; Supplier Device Package: to-226-3, to-92-3 Long Body; Base Product Number: 2n5551;	Shape: SMD; Function: Mosfet; Fet Type: N-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 600 V; Continuous Drain (ID) @ 25°c: 2.6A (Tc); Drive Voltage (Max RDS on, Min RDS on): 10V; RDS on (Max) @ ID, Vgs: 3.4ohm @ 500mA, 10V; Vgs(Th) (Max) @ ID: 3.5V @ 40µa; Gate Charge (Qg) (Max) @ Vgs: 4.6 Nc @ 10 V; Vgs (Max): ±20V; Input Capacitance (CISS) (Max) @ Vds: 93 PF @ 100 V; Power Dissipation (Max): 5W (Tc); Operating Temperature: -40°c ~ 150°c (Tj); Mounting Type: Surface Mount; Supplier Device Package: Pg-Sot223-3; Base Product Number: Ipn60r3;
Supplier Name	Wuxi Goford Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.
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