Lead Freepb 20V Mosfet for Watch Holder Charger pictures & photos

Lead Freepb 20V Mosfet for Watch Holder Charger

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About this Item

Price

Min. Order Reference FOB Price

20 Pieces US$0.015-0.229 / Piece

Sepcifications

Certification RoHS, ISO, SGS
Function Switch Transistor
Structure Trench
Encapsulation Structure Plastic Sealed Transistor
Power Level Medium Power
Transport Package Carton
Specification DFN package
Trademark GOFORD
Origin China
Spq 3000PCS/Reel

Product Description

Lead Freepb 20V Mosfet for Watch Holder Charger General Description The G2012 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features General Features VDS 20V ID (at VGS =10V) 12A RDS(ON) (at ...

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Wuxi Goford Semiconductor Co., Ltd.

Gold Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory, Trading Company
Business Range Consumer Electronics, Electrical & Electronics
Main Products Mosfet, Transistor, Semiconductor, Power Transistor, Power Mosfet, Super Junction Mosfet, Mosfet Transistor, Super Junction, Electronic Component
Management System Certification ISO 9001
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
International Commercial Terms(Incoterms) FOB, CFR, CIF, EXW

Mosfet Comparison

	Lead Freepb 20V Mosfet for Watch Holder Charger Contact Now	Ss8050 Ss8550 Y1 1.5A/25V SMD Transistor Contact Now	Quick View IGBT Transistor Fgh40n60sfd Fgh40n60 40A 600V to-247 Contact Now	Rhrp8120 1200V 8A to-220 Single Diode / Rectifier Contact Now	Quick View 10n120bnd High Power Triode Used in Induction Cooker Hgtg Tube Contact Now

Transaction Info
	Lead Freepb 20V Mosfet for Watch Holder Charger Contact Now	Ss8050 Ss8550 Y1 1.5A/25V SMD Transistor Contact Now	Quick View IGBT Transistor Fgh40n60sfd Fgh40n60 40A 600V to-247 Contact Now	Rhrp8120 1200V 8A to-220 Single Diode / Rectifier Contact Now	Quick View 10n120bnd High Power Triode Used in Induction Cooker Hgtg Tube Contact Now
Price	US $ 0.015-0.229/ Piece	US $ 0.05/ Piece	US $ 0.01-0.10/ Piece	US $ 2.80-2.90/ Piece	US $ 0.90-1.00/ Piece
Min Order	20 Pieces	3000 Pieces	100 Pieces	10 Pieces	10 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Paypal	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal
Quality Control
Product Certification	RoHS, ISO, SGS	-	-	RoHS	RoHS
Management System Certification	ISO 9001	-	-	-	-
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	South America, Europe, Southeast Asia/ Mideast, Others	South America, Europe, Southeast Asia/ Mideast, Others	South America, Europe, Southeast Asia/ Mideast, Others	South America, Europe, Southeast Asia/ Mideast, Others
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	-	-	-	-
Average Lead Time	Off-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)
Product Attributes
Specification	Function: Switch Transistor; Structure: Trench; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Medium Power; Spq: 3000PCS/Reel;	Shape: ST; Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor; Working Frequency: Overclocking; Encapsulation Structure: Surface Package; Material: Silicon; Installation Style: Through Hole; Transistor Polarity: NPN; Lead Free Status: RoHS Compliant; Package / Box: to-92; Transistor Type: Bipolar Transistor (Bjt); Characteristic Frequency: 100MHz; Collector Current-Max (IC): 1.5 a; Package Shape: Rectangular; Collector-Emitter Voltage-Max: 25V; Surface Mount: Yes;	Function: IGBT Transistor; Structure: Diffusion; Power Level: High Power; Name: Fgh40n60sfdtu; Product Category: IGBT Transistor; Polarity/Channel Type: N-Channel; Transistor Application: Power Control; Subcategory: Insulated Gate Bip Transistors; Series: Fgh40n60sfd; Product Type: IGBT; Detailed Description: IGBT Field Stop 600V 80A 290W Through Hole; IGBT Type: Field Stop; Base Product Number: Fgh40n60;	Shape: ST; Shielding Type: /; Cooling Method: /; Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor; Working Frequency: Overclocking; Structure: /; Encapsulation Structure: Surface Package; Power Level: High Power; Material: Silicon; Quality: Good; Operating Temperature: Standard; Type: Fast Recovery Rectifiers; Shipping by: DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post; Product: Rectifiers; Transistor Type: Fast Recovery Diode; Current: 8A; Voltage: 1200V;	Shape: ST; Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor; Working Frequency: High Frequency; Structure: NPN; Encapsulation Structure: Plug-in Transistor; Material: Silicon; Quality: Good; Operating Temperature: Standard; Lead Free Status: RoHS Compliant; Shipping by: DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post; Condition: Brand Newand Original; Type: Fast Recovery Diode; Power: High Power Tube; Transistor Structure: NPN;
Supplier Name	Wuxi Goford Semiconductor Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.
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