Transistor

US$0.021-0.03 / Piece

View

-60V -1.6A Nce2309 P-Channel Enhancement Mode Power Mosfet Diode Triode Transistor with Sot-23 pictures & photos

Recommend for you
What is Original Nce80td65bt 650V 80A Trench Fs II Fast IGBT with to-247
What is Nce6003y Nce N-Channel Enhancement Mode Power Mosfet
What is 650V 15A Nce65t260f N-Channel Super Junction Power Mosfet with to-220f

What is -60V -1.6A Nce2309 P-Channel Enhancement Mode Power Mosfet Diode Triode Transistor with Sot-23

Name: -60V -1.6A Nce2309 P-Channel Enhancement Mode Power Mosfet Diode Triode Transistor with Sot-23
Uploaded: 2024-05-10T14:57:27+08:00
Description: Detailed Photos Product Description NCE provides N-type 12V~200V and P-type 12V~150V Trench power MOSFETs, adopting advanced process manufacturing technology, better process conditions, and finely

Contact Now

Get Latest Price

About this Item

Price

Min. Order Reference FOB Price

5000 Pieces US$0.021-0.03 / Piece

Sepcifications

Application Diode, PWM Application
Batch Number 2023+
Manufacturing Technology Discrete Device
Material Element Semiconductor
Model Nce2309
Package SMD
Signal Processing Analog Digital Composite and Function
Type P-Type Semiconductor
Transport Package Cardboard Box
Specification SOT-23
Trademark NCE
Origin China
Voltage -60V
Current -1.6A
Channel P-Channel Mosfet
Used for PWM Application
Applications 2 Load Switch
Brand Nce

Product Description

Detailed Photos Product Description NCE provides N-type 12V~200V and P-type 12V~150V Trench power MOSFETs, adopting advanced process manufacturing technology, better process conditions, and finely optimized device structure to continuously optimize on-resistance, switching characteristics, ...

Learn More

SHENZHEN HEYLOO ELECTRONIC TECHNOLOGY CO., LTD

Diamond Member Since 2024

Audited Supplier

Business Type Manufacturer/Factory, Trading Company
Business Range Auto, Motorcycle Parts & Accessories, Computer Products, Consumer Electronics, Electrical & Electronics, Industrial Equipment & Components
Main Products Mosfet, IGBT, Ipm, Tvs, RAM Memory, Triode, IC, Transistor, Semiconductor
Plant Area 101~500 square meters
Main Markets Southeast Asia, Mid East, Eastern Asia, Western Europe
Average Lead Time Peak Season Lead Time: one month
Off Season Lead Time: 1-3 months

Transistor Comparison

	Quick View -60V -1.6A Nce2309 P-Channel Enhancement Mode Power Mosfet Diode Triode Transistor with Sot-23 Contact Now	Quick View Japanese Quality CZ 8 Inch P Type Test Dummy Film Silicon Wafer Contact Now	Quick View 12-Inch P Type Test Wafer Polished Silicon Wafer Contact Now	Quick View Japanese Quality Single Crystal Custom Monocrystal Silicon Plate Si Silicon Wafer Contact Now	Quick View 4inch Silicon Polished Wafer Semiconductor Test Dummy Wafer Contact Now

Transaction Info
	Quick View -60V -1.6A Nce2309 P-Channel Enhancement Mode Power Mosfet Diode Triode Transistor with Sot-23 Contact Now	Quick View Japanese Quality CZ 8 Inch P Type Test Dummy Film Silicon Wafer Contact Now	Quick View 12-Inch P Type Test Wafer Polished Silicon Wafer Contact Now	Quick View Japanese Quality Single Crystal Custom Monocrystal Silicon Plate Si Silicon Wafer Contact Now	Quick View 4inch Silicon Polished Wafer Semiconductor Test Dummy Wafer Contact Now
Price	US $ 0.021-0.03/ Piece	US $ 20/ pc	US $ 25/ pc	US $ 25/ pc	US $ 10/ pc
Min Order	5000 Pieces	50 pc	50 pc	50 pc	50 pc
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Paypal	T/T, Paypal	T/T, Paypal	T/T, Paypal	T/T, Paypal
Quality Control
Management System Certification	-	ISO 29001	ISO 29001	ISO 29001	ISO 29001
Trade Capacity
Export Markets	Southeast Asia, Mid East, Eastern Asia, Western Europe	Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Southeast Asia/ Mideast, East Asia(Japan/ South Korea)
Annual Export Revenue	-	-	-	-	-
Business Model	-	-	-	-	-
Average Lead Time	Off-season: 1-3 Month(s) Peak-season: 1 Month(s)	-	-	-	-
Product Attributes
Specification	Application: Diode, PWM Application; Batch Number: 2023+; Manufacturing Technology: Discrete Device; Material: Element Semiconductor; Model: Nce2309; Package: SMD; Signal Processing: Analog Digital Composite and Function; Type: P-Type Semiconductor; Voltage: -60V; Current: -1.6A; Channel: P-Channel Mosfet; Used for: PWM Application; Applications 2: Load Switch; Brand: Nce;	Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Frront Side: Polished; Edge: Polished;	Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Frront Side: Polished; Edge: Polished;	Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Frront Side: Polished; Edge: Polished;	Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Frront Side: Polished; Edge: Polished;
Supplier Name	SHENZHEN HEYLOO ELECTRONIC TECHNOLOGY CO., LTD	Fine Silicon Manufacturing(Shanghai)Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.
Select All

Contact Now

Hot Search