Specification |
Encapsulation Structure: Plastic Sealed Transistor;
Installation: Plug-in Triode;
Working Frequency: High Frequency;
Power Level: High Power;
Function: IGBT;
Structure: /;
Material: Plastic with Copper;
Installation Style: Through Hole;
Product Type: IGBT Transistors;
Collector Continuous Current: 80 a;
Series: Trenchstop IGBT;
Product Number: Ikw75n60t;
Detailed Description: IGBT Trench Field Stop Through Hole Pg-To247-3;
Category: Transistors - Igbts - Single;
IGBT Type: Trench Field Stop;
Vce(on) (Max) @ Vge, IC: 2V @ 15V, 75A;
Test Condition: 400V, 75A, 5ohm, 15V;
Operating Temperature: -40c ~ 175c (Tj);
Mounting Type: Through Hole;
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Encapsulation Structure: Plastic Sealed Transistor;
Installation: Plug-in Triode;
Working Frequency: Low Frequency;
Power Level: Medium Power;
Function: Power Triode, Switching Triode;
Structure: Planar;
Material: Silicon;
V Cbo: 50V;
V CEO: 45V;
V Ebo: 5V;
Package: Sot-23;
Case: Molded Plastic;
I C: 100mA;
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Encapsulation Structure: Plastic Sealed Transistor;
Installation: Plug-in Triode;
Working Frequency: Low Frequency;
Power Level: Medium Power;
Function: Power Triode, Switching Triode;
Structure: Planar;
Material: Silicon;
V Cbo: 30V;
V CEO: 30V;
V Ebo: 5V;
Package: Sot-23;
Case: Molded Plastic;
I C: 100mA;
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Encapsulation Structure: Ceramic Packaged Transistor;
Installation: Plug-in Triode;
Power Level: Medium Power;
Material: Silicon;
Fet Type: N-Channel;
Technology: Mosfet (Metal Oxide);
Drain to Source Voltage (Vdss): 650 V;
Current - Continuous Drain (ID) @25c: 24.3A (Tc);
RDS on (Max) @ ID, Vgs: 160mohm @ 15.4A, 10V;
Vgs(Th) (Max) @ ID: 3.9V @ 1.2mA;
Gate Charge (Qg) (Max) @ Vgs: 135 Nc @ 10 V;
Input Capacitance (CISS) (Max) @ Vds: 3000 PF @ 25 V;
Power Dissipation (Max): 240W (Tc);
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Encapsulation Structure: DIP;
Installation: SMD Triode;
Power Level: Medium Power;
Material: Silicon;
Fet Type: N-Channel;
Technology: Mosfet (Metal Oxide);
Drain to Source Voltage (Vdss): 60 V;
Current - Continuous Drain (ID) @25c: 100A (Tc);
Drive Voltage (Max RDS on, Min RDS on): 5V, 10V;
RDS on (Max) @ ID, Vgs: 4.5mohm @ 25A, 10V;
Vgs(Th) (Max) @ ID: 2.1V @ 1mA;
Vgs (Max): ±10V;
Input Capacitance (CISS) (Max) @ Vds: 9710 PF @ 25 V;
Power Dissipation (Max): 234W (Tc);
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