Transistor
US$1.00-3.00 / Piece
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What is New Original Transistor K75t60 to-247 75A 600V Welding Machine Ikw75n60t

About this Item
Details
Company Profile

Price

Min. Order Reference FOB Price

10 Pieces US$1.00-3.00 / Piece

Sepcifications

  • Certification RoHS
  • Encapsulation Structure Plastic Sealed Transistor
  • Installation Plug-in Triode
  • Working Frequency High Frequency
  • Power Level High Power
  • Function IGBT
  • Structure /
  • Material Plastic with Copper
  • Transport Package Standard Packaging
  • Trademark CHN
  • Origin China
  • Installation Style Through Hole
  • Product Type IGBT Transistors
  • Collector Continuous Current 80 a
  • Series Trenchstop IGBT
  • Product Number Ikw75n60t
  • Detailed Description IGBT Trench Field Stop Through Hole Pg-To247-3
  • Category Transistors - Igbts - Single
  • IGBT Type Trench Field Stop
  • Vce(on) (Max) @ Vge, IC 2V @ 15V, 75A
  • Test Condition 400V, 75A, 5ohm, 15V
  • Operating Temperature -40c ~ 175c (Tj)
  • Mounting Type Through Hole

Product Description

Maximum Junction Temperature 175°C Short circuit withstand time 5s P ositive temperature coefficient in VCE(sat) Applications: Frequency Converters Uninterrupted Power Supply

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Transistor Comparison
Transaction Info
Price US $ 1.00-3.00/ Piece US $ 0.0183-0.0486/ Piece US $ 0.0183-0.0486/ Piece US $ 1.5/ Piece US $ 0.3/ Piece
Min Order 10 Pieces 3000 Pieces 3000 Pieces 100 Pieces 100 Pieces
Trade Terms - - - - -
Payment Terms L/C, T/T, D/P, Western Union, Paypal T/T, Western Union, Paypal, Money Gram T/T, Western Union, Paypal, Money Gram T/T, Western Union, Paypal T/T, Western Union, Paypal
Quality Control
Product Certification RoHS RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC RoHS RoHS
Management System Certification - - - GMP GMP
Trade Capacity
Export Markets South America, Europe, Southeast Asia/ Mideast, Others Domestic Domestic North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue - - - - -
Business Model - - - OEM OEM
Average Lead Time Off-season: within 15 Day(s)
Peak-season: within 15 Day(s)
- - - -
Product Attributes
Specification
Encapsulation Structure: Plastic Sealed Transistor;
Installation: Plug-in Triode;
Working Frequency: High Frequency;
Power Level: High Power;
Function: IGBT;
Structure: /;
Material: Plastic with Copper;
Installation Style: Through Hole;
Product Type: IGBT Transistors;
Collector Continuous Current: 80 a;
Series: Trenchstop IGBT;
Product Number: Ikw75n60t;
Detailed Description: IGBT Trench Field Stop Through Hole Pg-To247-3;
Category: Transistors - Igbts - Single;
IGBT Type: Trench Field Stop;
Vce(on) (Max) @ Vge, IC: 2V @ 15V, 75A;
Test Condition: 400V, 75A, 5ohm, 15V;
Operating Temperature: -40c ~ 175c (Tj);
Mounting Type: Through Hole;
Encapsulation Structure: Plastic Sealed Transistor;
Installation: Plug-in Triode;
Working Frequency: Low Frequency;
Power Level: Medium Power;
Function: Power Triode, Switching Triode;
Structure: Planar;
Material: Silicon;
V Cbo: 50V;
V CEO: 45V;
V Ebo: 5V;
Package: Sot-23;
Case: Molded Plastic;
I C: 100mA;
Encapsulation Structure: Plastic Sealed Transistor;
Installation: Plug-in Triode;
Working Frequency: Low Frequency;
Power Level: Medium Power;
Function: Power Triode, Switching Triode;
Structure: Planar;
Material: Silicon;
V Cbo: 30V;
V CEO: 30V;
V Ebo: 5V;
Package: Sot-23;
Case: Molded Plastic;
I C: 100mA;
Encapsulation Structure: Ceramic Packaged Transistor;
Installation: Plug-in Triode;
Power Level: Medium Power;
Material: Silicon;
Fet Type: N-Channel;
Technology: Mosfet (Metal Oxide);
Drain to Source Voltage (Vdss): 650 V;
Current - Continuous Drain (ID) @25c: 24.3A (Tc);
RDS on (Max) @ ID, Vgs: 160mohm @ 15.4A, 10V;
Vgs(Th) (Max) @ ID: 3.9V @ 1.2mA;
Gate Charge (Qg) (Max) @ Vgs: 135 Nc @ 10 V;
Input Capacitance (CISS) (Max) @ Vds: 3000 PF @ 25 V;
Power Dissipation (Max): 240W (Tc);
Encapsulation Structure: DIP;
Installation: SMD Triode;
Power Level: Medium Power;
Material: Silicon;
Fet Type: N-Channel;
Technology: Mosfet (Metal Oxide);
Drain to Source Voltage (Vdss): 60 V;
Current - Continuous Drain (ID) @25c: 100A (Tc);
Drive Voltage (Max RDS on, Min RDS on): 5V, 10V;
RDS on (Max) @ ID, Vgs: 4.5mohm @ 25A, 10V;
Vgs(Th) (Max) @ ID: 2.1V @ 1mA;
Vgs (Max): ±10V;
Input Capacitance (CISS) (Max) @ Vds: 9710 PF @ 25 V;
Power Dissipation (Max): 234W (Tc);
Supplier Name

Shenzhen Jin Da Peng Technology Co., Ltd.

China Supplier - Diamond Member Audited Supplier

Guangdong Juxing Electronics Technology Co., Ltd

China Supplier - Diamond Member Audited Supplier

Guangdong Juxing Electronics Technology Co., Ltd

China Supplier - Diamond Member Audited Supplier

ShenZhen Nova Semiconductor Co., Ltd.

China Supplier - Diamond Member Audited Supplier

ShenZhen Nova Semiconductor Co., Ltd.

China Supplier - Diamond Member Audited Supplier