IGBT Module

US$171.40 / Piece

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Fp75r12ke3 New Original Infineon High Power IGBT Module pictures & photos

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What is Fp75r12ke3 New Original Infineon High Power IGBT Module

Name: Fp75r12ke3 New Original Infineon High Power IGBT Module
Uploaded: 2022-02-17T15:34:56+08:00
Description: Product Paramenters Mfr Infineon Technologies Package Bulk IGBT Type NPT Configuration Single Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 75A Input Standard NTC Thermistor No Operating Temperature -40°

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About this Item

Price

Min. Order Reference FOB Price

5 Pieces US$171.40 / Piece

Sepcifications

Certification RoHS, CE, ISO
Installation Mount Module
Working Frequency High Frequency
Power Level High Power
Function Power Triode, IGBT Module
Specification Length: 122 mm
Origin China
Product Type IGBT Module
Lead Free Status RoHS Compliant
Product IGBT Silicon Modules
Minimum Operating Temperature - 40 C
Package / Enclosure Econopim3
Installation Style Chassis Mount
Subcategory IGBT
Width 62 mm
Packaging Tray
Pd - Power Dissipation 350 W
Collector- Emitter Voltage Vceo Max 1200 V
Gate-Emitter Leakage Current 400 Na
Product Category IGBT Module
Manufacturer Infineon
Detailed Description IGBT Module NPT Single Chassis Mount Module

Product Description

Product Paramenters Mfr Infineon Technologies Package Bulk IGBT Type NPT Configuration Single Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 75A Input Standard NTC Thermistor No Operating Temperature -40°C ~ 125°C (TJ) Mounting Type Chassis Mount Package / Case Module Supplier ...

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Shenzhen Jin Da Peng Technology Co., Ltd.

Diamond Member Since 2016

Audited Supplier

Rating & Reviews： 5.0/5.0

(1 Reviews)

Business Type Trading Company
Main Products Transistor, IC, Rectifier
Number of Employees 18
Year of Establishment 2008-09-17
Plant Area 250 square meters
Average Lead Time Peak Season Lead Time: one month
Off Season Lead Time: within 15 workdays

IGBT Module Comparison

	Quick View Fp75r12ke3 New Original Infineon High Power IGBT Module Contact Now	Original Ixtq88n30p N-Channel 300V 88A (Tc) 600W (Tc) Mosfet Transistor 88n30 Bom Service Contact Now	Original Ksd1691ystu Bipolar (BJT) Transistor NPN 60V 5A 1.3W Ksd1691 (We provide Bom service PCB PCBA) Contact Now	Original Irfu9024pbf P-Channel 60 V 8.8A (Tc) 2.5W (Ta) , 42W (Tc) Mosfet Transistor Irfu9024 (We provide Bom service PCB PCBA) Contact Now	Quick View Original Transistors Mmbt4403 Sot-23 Plastic-Encapsulate Transistors Contact Now

Transaction Info
	Quick View Fp75r12ke3 New Original Infineon High Power IGBT Module Contact Now	Original Ixtq88n30p N-Channel 300V 88A (Tc) 600W (Tc) Mosfet Transistor 88n30 Bom Service Contact Now	Original Ksd1691ystu Bipolar (BJT) Transistor NPN 60V 5A 1.3W Ksd1691 (We provide Bom service PCB PCBA) Contact Now	Original Irfu9024pbf P-Channel 60 V 8.8A (Tc) 2.5W (Ta) , 42W (Tc) Mosfet Transistor Irfu9024 (We provide Bom service PCB PCBA) Contact Now	Quick View Original Transistors Mmbt4403 Sot-23 Plastic-Encapsulate Transistors Contact Now
Price	US $ 171.4/ Piece	US $ 1/ Piece	US $ 0.05/ Piece	US $ 0.3/ Piece	US $ 0.007-0.008/ Piece
Min Order	5 Pieces	100 Pieces	100 Pieces	100 Pieces	3000 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T, D/P, Western Union, Paypal	T/T, Western Union, Paypal	T/T, Western Union, Paypal	T/T, Western Union, Paypal	T/T, D/P, Western Union, Paypal
Quality Control
Product Certification	RoHS, CE, ISO	RoHS	RoHS	RoHS	RoHS, CE, ISO, CCC
Management System Certification	-	GMP	GMP	GMP	ISO 9001
Trade Capacity
Export Markets	South America, Europe, Southeast Asia/ Mideast, Others	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America
Annual Export Revenue	-	-	-	-	-
Business Model	-	OEM	OEM	OEM	-
Average Lead Time	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	-	-	-	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)
Product Attributes
Specification	Installation: Mount Module; Working Frequency: High Frequency; Power Level: High Power; Function: Power Triode, IGBT Module; Product Type: IGBT Module; Lead Free Status: RoHS Compliant; Product: IGBT Silicon Modules; Minimum Operating Temperature: - 40 C; Package / Enclosure: Econopim3; Installation Style: Chassis Mount; Subcategory: IGBT; Width: 62 mm; Packaging: Tray; Pd - Power Dissipation: 350 W; Collector- Emitter Voltage Vceo Max: 1200 V; Gate-Emitter Leakage Current: 400 Na; Product Category: IGBT Module; Manufacturer: Infineon; Detailed Description: IGBT Module NPT Single Chassis Mount Module;	Encapsulation Structure: Ceramic Packaged Transistor; Installation: Plug-in Triode; Power Level: Medium Power; Material: Silicon; Fet Type: N-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 300 V; Current - Continuous Drain (ID) @25c: 88A (Tc); RDS on (Max) @ ID, Vgs: 40mohm @ 44A, 10V; Vgs(Th) (Max) @ ID: 5V @ 250µa; Gate Charge (Qg) (Max) @ Vgs: 180 Nc @ 10 V; Input Capacitance (CISS) (Max) @ Vds: 6300 PF @ 25 V; Power - Max: 600W (Tc);	Encapsulation Structure: DIP; Installation: Plug-in Triode; Power Level: Medium Power; Material: Silicon; Transistor Polarity: NPN; Current - Collector (IC) (Max): 5 a; Voltage - Collector Emitter Breakdown (M: 60 V; Vce Saturation (Max) @ Ib, IC: 300mv @ 200mA, 2A; Current - Collector Cutoff (Max): 10µa (Icbo); DC Current Gain (Hfe) (Min) @ IC, Vce: 160 @ 2A, 1V; Power - Max: 1.3 W; Operating Temperature: 150°c (Tj);	Encapsulation Structure: Ceramic Packaged Transistor; Installation: Plug-in Triode; Power Level: Medium Power; Material: Silicon; Fet Type: P-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 60 V; Current - Continuous Drain (ID) @25c: 8.8A (Tc); RDS on (Max) @ ID, Vgs: 280mohm @ 5.3A, 10V; Vgs(Th) (Max) @ ID: 4V @ 250µa; Gate Charge (Qg) (Max) @ Vgs: 19 Nc @ 10 V; Input Capacitance (CISS) (Max) @ Vds: 570 PF @ 25 V; Power Dissipation (Max): 2.5W (Ta), 42W (Tc);	Encapsulation Structure: Plastic Sealed Transistor; Installation: SMD Triode; Structure: PNP;
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