High Voltage Diode 500kv

US$135.00 / Piece

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IGBT Power Module 10μs short circuit capability 1200V/100A 2 in one-package Fetures SEMICONDUCTOR Applications GD100HFY120C1S pictures & photos

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What is IGBT Power Module 10μs short circuit capability 1200V/100A 2 in one-package Fetures SEMICONDUCTOR Applications GD100HFY120C1S

Name: IGBT Power Module 10&mu;s short circuit capability 1200V/100A 2 in one-package Fetures SEMICONDUCTOR Applications GD100HFY120C1S
Uploaded: 2024-02-05T17:21:47+08:00
Description: IGBT Power Module 10μs short circuit capability 1200V/100A 2 in one-package Fetures SEMICONDUCTOR Applications GD100HFY120C1S General Description : - IGBT Power Module provides ultra low conductio

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Price

Min. Order Reference FOB Price

1 Piece US$135.00 / Piece

Sepcifications

Certification RoHS
Power Level Small Power
Material Silicon
Transport Package Plastic Package
Specification Customized
Trademark Merry
Origin Guangdong, China
Features1 Extremely Low Switching Loss
Features2 Excellent Stability and Uniformity
Features3 100% Avalanche Tested
Features4 Built-in ESD Diode
Application1 Switch Mode Power Supply (SMPS)
Application2 Power Factor Correction (Pfc)
Application3 Uninterruptible Power Supply (UPS)
Application4 AC to DC Converters
Application5 Telecom
Application6 TV Power & LED Lighting Power

Product Description

IGBT Power Module 10μs short circuit capability 1200V/100A 2 in one-package Fetures SEMICONDUCTOR Applications GD100HFY120C1S General Description : - IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as ...

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Dongguan Merry Electronic Co., Ltd.

Diamond Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory
Business Range Consumer Electronics, Electrical & Electronics, Light Industry & Daily Use, Lights & Lighting
Main Products Diode, Transistor, Mosfet, Bridge, IC, Integrated Circuits, Microcontroller, Schottky Diodes, Super Junction Mosfets, Tvs ESD Protection
Type of Ownership Limited Company
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays

High Voltage Diode 500kv Comparison

	Quick View IGBT Power Module 10μs short circuit capability 1200V/100A 2 in one-package Fetures SEMICONDUCTOR Applications GD100HFY120C1S Contact Now	Dual N Channel 60V 40A Dfn5X6 Mosfet Contact Now	Quick View 60h65 Stgwa60h65dfb IGBT Trench Field Stop Transistor 650V 80A 375W to-247-3 Stgw60h65dfb Stgwt60h65dfb Contact Now	Quick View N-Channel 100 V 5.6A (Tc) 43W (Tc) Through Hole to-220ab Irl510pbf Mosfet Transistors Contact Now	Quick View Si7469dp Transistor P-Channel 80 V 28A (Tc) 5.2W (Ta) 83.3W (Tc) Si7469dp-T1-E3 Contact Now

Transaction Info
	Quick View IGBT Power Module 10μs short circuit capability 1200V/100A 2 in one-package Fetures SEMICONDUCTOR Applications GD100HFY120C1S Contact Now	Dual N Channel 60V 40A Dfn5X6 Mosfet Contact Now	Quick View 60h65 Stgwa60h65dfb IGBT Trench Field Stop Transistor 650V 80A 375W to-247-3 Stgw60h65dfb Stgwt60h65dfb Contact Now	Quick View N-Channel 100 V 5.6A (Tc) 43W (Tc) Through Hole to-220ab Irl510pbf Mosfet Transistors Contact Now	Quick View Si7469dp Transistor P-Channel 80 V 28A (Tc) 5.2W (Ta) 83.3W (Tc) Si7469dp-T1-E3 Contact Now
Price	US $ 135/ Piece	US $ 0.129-0.219/ Piece	US $ 2/ Piece	US $ 0.001-0.10/ Piece	US $ 0.01-1.00/ Piece
Min Order	1 Pieces	20 Pieces	100 Pieces	1 Pieces	1 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T, D/P, Western Union, Paypal, Money Gram	T/T, Paypal	L/C, T/T, D/P, Western Union, Paypal, Money Gram	L/C, T/T, D/P, Western Union, Paypal, Money Gram	T/T, Western Union, Paypal
Quality Control
Product Certification	RoHS	RoHS, ISO, SGS	RoHS	-	-
Management System Certification	-	ISO 9001	GMP	GMP	GMP
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	OEM, ODM	Own Brand	OEM	OEM	OEM
Average Lead Time	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: 1 Month(s)	-	-	-
Product Attributes
Specification	Power Level: Small Power; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application2: Power Factor Correction (Pfc); Application3: Uninterruptible Power Supply (UPS); Application4: AC to DC Converters; Application5: Telecom; Application6: TV Power & LED Lighting Power;	Function: Switch Transistor; Structure: Trench; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Medium Power; Spq: 2500PCS/Reel; Lead Time: 4~6 Weeks;	Shape: Through Hole; Function: Mosfet; Structure: DIP; Encapsulation Structure: Chip Transistor; Material: Silicon; IGBT Type: Trench Field Stop; Voltage - Collector Emitter Breakdown (M: 650 V; Current - Collector (IC) (Max): 80 a; Current - Collector Pulsed (Icm): 240 a; Vce(on) (Max) @ Vge, IC: 2V @ 15V, 60A; Power - Max: 375 W; Switching Energy: 1.59mj (on), 900µj (off); Input Type: Standard; Gate Charge: 306 Nc; Td (on/off) @ 25°c: 66ns/210ns; Test Condition: 400V, 60A, 10ohm, 15V; Reverse Recovery Time (Trr): 60 Ns;	Shape: Through Hole; Function: Mosfet; Encapsulation Structure: Chip Transistor; Material: Silicon; Fet Type: N-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 100 V; Continuous Drain (ID) @ 25°c: 5.6A (Tc); Drive Voltage: 4V, 5V; RDS on (Max) @ ID, Vgs: 540mohm @ 3.4A, 5V; Vgs(Th) (Max) @ ID: 2V @ 250µa; Gate Charge (Qg) (Max) @ Vgs: 6.1 Nc @ 5 V; Vgs (Max): 10V; Input Capacitance (CISS) (Max) @ Vds: 250 PF @ 25 V; Power Dissipation (Max): 43W (Tc); Operating Temperature: -55°c ~ 175°c (Tj); Mounting Type: Through Hole; Package / Case: to-220-3;	Shielding Type: Standard; Cooling Method: Standard; Function: N/a; Encapsulation Structure: SMD; Power Level: Standard; Material: Standard; Fet Type: P-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 80 V; Current - Continuous Drain (ID) @ 25c: 28A (Tc); Drive Voltage (Max RDS on, Min RDS on): 4.5V, 10V; RDS on (Max) @ ID, Vgs: 25mohm @ 10.2A, 10V; Vgs(Th) (Max) @ ID: 3V @ 250µa; Gate Charge (Qg) (Max) @ Vgs: 160 Nc @ 10 V; Vgs (Max): ±20V; Input Capacitance (CISS) (Max) @ Vds: 4700 PF @ 40 V; Power Dissipation (Max): 5.2W (Ta), 83.3W (Tc); Operating Temperature: -55°c ~ 150°c (Tj); Mounting Type: Surface Mount; Package / Case: Powerpak® So-8; Base Product Number: Si7469;
Supplier Name	Dongguan Merry Electronic Co., Ltd.	Wuxi Goford Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.
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What is IGBT Power Module 10&mu;s short circuit capability 1200V/100A 2 in one-package Fetures SEMICONDUCTOR Applications GD100HFY120C1S

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What is IGBT Power Module 10μs short circuit capability 1200V/100A 2 in one-package Fetures SEMICONDUCTOR Applications GD100HFY120C1S